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  1. Article ; Online: AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

    Lee, Hee Ho / Bae, Myunghan / Jo, Sung-Hyun / Shin, Jang-Kyoo / Son, Dong Hyeok / Won, Chul-Ho / Jeong, Hyun-Min / Lee, Jung-Hee / Kang, Shin-Won

    Sensors (Basel, Switzerland)

    2015  Volume 15, Issue 8, Page(s) 18416–18426

    Abstract: In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor ... varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor ... for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used ...

    Abstract In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.
    MeSH term(s) Aluminum Compounds/chemistry ; Biosensing Techniques/instrumentation ; C-Reactive Protein/analysis ; Electricity ; Electrons ; Gallium/chemistry ; Humans ; Photoelectron Spectroscopy ; Transistors, Electronic
    Chemical Substances Aluminum Compounds ; aluminum gallium nitride ; gallium nitride (1R9CC3P9VL) ; C-Reactive Protein (9007-41-4) ; Gallium (CH46OC8YV4)
    Language English
    Publishing date 2015-07-28
    Publishing country Switzerland
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ZDB-ID 2052857-7
    ISSN 1424-8220 ; 1424-8220
    ISSN (online) 1424-8220
    ISSN 1424-8220
    DOI 10.3390/s150818416
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

    Hee Ho Lee / Myunghan Bae / Sung-Hyun Jo / Jang-Kyoo Shin / Dong Hyeok Son / Chul-Ho Won / Hyun-Min Jeong / Jung-Hee Lee / Shin-Won Kang

    Sensors, Vol 15, Iss 8, Pp 18416-

    2015  Volume 18426

    Abstract: In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor ... varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor ... for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used ...

    Abstract In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.
    Keywords AlGaN/GaN ; HEMT ; CRP ; biosensor ; null-balancing circuit ; Technology (General) ; T1-995 ; Technology ; T ; Analytical chemistry ; QD71-142 ; Chemistry ; QD1-999 ; Science ; Q
    Language English
    Publishing date 2015-07-01T00:00:00Z
    Publisher MDPI AG
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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