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Article ; Online: N,N-dimethyltryptamine compound found in the hallucinogenic tea ayahuasca, regulates adult neurogenesis in vitro and in vivo.

Morales-Garcia, Jose A / Calleja-Conde, Javier / Lopez-Moreno, Jose A / Alonso-Gil, Sandra / Sanz-SanCristobal, Marina / Riba, Jordi / Perez-Castillo, Ana

Translational psychiatry

2020 Volume 10, Issue 1, Page(s) 331

Abstract: N,N-dimethyltryptamine (DMT) is a component of the ayahuasca brew traditionally used for ritual and ...

Abstract	N,N-dimethyltryptamine (DMT) is a component of the ayahuasca brew traditionally used for ritual and therapeutic purposes across several South American countries. Here, we have examined, in vitro and vivo, the potential neurogenic effect of DMT. Our results demonstrate that DMT administration activates the main adult neurogenic niche, the subgranular zone of the dentate gyrus of the hippocampus, promoting newly generated neurons in the granular zone. Moreover, these mice performed better, compared to control non-treated animals, in memory tests, which suggest a functional relevance for the DMT-induced new production of neurons in the hippocampus. Interestingly, the neurogenic effect of DMT appears to involve signaling via sigma-1 receptor (S1R) activation since S1R antagonist blocked the neurogenic effect. Taken together, our results demonstrate that DMT treatment activates the subgranular neurogenic niche regulating the proliferation of neural stem cells, the migration of neuroblasts, and promoting the generation of new neurons in the hippocampus, therefore enhancing adult neurogenesis and improving spatial learning and memory tasks.
MeSH term(s)	Animals ; Banisteriopsis ; Mice ; N,N-Dimethyltryptamine ; Neural Stem Cells ; Neurogenesis ; Tea
Chemical Substances	Tea ; N,N-Dimethyltryptamine (WUB601BHAA)
Language	English
Publishing date	2020-09-28
Publishing country	United States
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	2609311-X
ISSN	2158-3188 ; 2158-3188
ISSN (online)	2158-3188
ISSN	2158-3188
DOI	10.1038/s41398-020-01011-0
Database	MEDical Literature Analysis and Retrieval System OnLINE

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Article: Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires.

Nicolai, Lars / Gačević, Žarko / Calleja, Enrique / Trampert, Achim

Nanoscale research letters

2019 Volume 14, Issue 1, Page(s) 232

Abstract: The three-dimensional structure of GaN/(In,Ga)N core-shell nanowires with multi-faceted pencil ... of the tomographic reconstruction allow the detailed determination of the complex morphology of the inner (In,Ga)N ...

Abstract	The three-dimensional structure of GaN/(In,Ga)N core-shell nanowires with multi-faceted pencil-shaped apex is analyzed by electron tomography using high-angle annular dark-field mode in a scanning transmission electron microscope. Selective area growth on GaN-on-sapphire templates using a patterned mask is performed by molecular beam epitaxy to obtain ordered arrays of uniform nanowires. Our results of the tomographic reconstruction allow the detailed determination of the complex morphology of the inner (In,Ga)N multi-faceted shell structure and its deviation from the perfect hexagonal symmetry. The tomogram unambiguously identifies a dot-in-a-wire configuration at the nanowire apex including the exact shape and size, as well as the spatial distribution of its chemical composition.
Language	English
Publishing date	2019-07-12
Publishing country	United States
Document type	Journal Article
ZDB-ID	2253244-4
ISSN	1556-276X ; 1931-7573
ISSN (online)	1556-276X
ISSN	1931-7573
DOI	10.1186/s11671-019-3072-1
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Article ; Online: Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

Kong, X / Li, H / Albert, S / Bengoechea-Encabo, A / Sanchez-Garcia, M A / Calleja, E / Draxl, C / Trampert, A

Nanotechnology

2016 Volume 27, Issue 6, Page(s) 65705

Abstract: We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti ... at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar ... to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides ...

Abstract	We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns. Density functional theory calculations are applied to clarify the atomic configurations of a Ti monolayer occupation on the GaN (0002) plane and to prove the inversion effect. The polarity inversion leads to an enhanced indium incorporation in the subsequent (In,Ga)N segment of the nanocolumn. This study provides a deeper understanding of the effects of Ti mask in the well-controlled selective area growth of (In,Ga)N/GaN nanocolumns.
Language	English
Publishing date	2016-02-12
Publishing country	England
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	1362365-5
ISSN	1361-6528 ; 0957-4484
ISSN (online)	1361-6528
ISSN	0957-4484
DOI	10.1088/0957-4484/27/6/065705
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Article: Palladium(II)-Catalyzed C(sp3)–H Activation of N,O-Ketals towards a Method for the β-Functionalization of Ketones

Ho, Danny K. H. / Calleja, Jonas / Gaunt, Matthew J.

Synlett

2019 Volume 30, Issue 04, Page(s) 454–458

Abstract: ... activation pathway is reported. An N,O-ketal directs an aliphatic C–H carbonylation to form γ-lactams ...

Abstract	A method for the formal β-functionalization of aliphatic ketones via a palladium-catalyzed sp 3 C–H activation pathway is reported. An N,O-ketal directs an aliphatic C–H carbonylation to form γ-lactams which upon hydrolysis generate γ-keto carboxylic acids. This C–C bond-forming reaction is tolerant of a range of functional groups, enabling the synthesis of a range of synthetically important building blocks. Furthermore, the concepts underlying this transformation have also enabled the development of a related C–H alkenylation process to highly functionalised heterocycles.
Keywords	oxazolidine ; palladium ; carbonylation ; lactam ; ketone ; C–H activation
Language	English
Publishing date	2019-02-05
Publisher	Georg Thieme Verlag
Publishing place	Stuttgart ; New York
Document type	Article
ZDB-ID	2042012-2
ISSN	1437-2096 ; 0936-5214
ISSN (online)	1437-2096
ISSN	0936-5214
DOI	10.1055/s-0037-1611664
Database	Thieme publisher's database

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Article ; Online: Fiber optic sensors based on hybrid phenyl-silica xerogel films to detect n-hexane

Jesús C. Echeverría / Ignacio Calleja / Paula Moriones / Julián J. Garrido

Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 475-

determination of the isosteric enthalpy of adsorption

2017 Volume 484

Abstract: ... the xerogels. At a given pressure of n-hexane, the response of each sensing element decreased with temperature ... at different temperatures. The magnitude of the isosteric enthalpy of n-hexane increased with the relative ...

Abstract	We investigated the response of three fiber optic sensing elements prepared at pH 10 from phenyltriethoxysilane (PhTEOS) and tetraethylsilane (TEOS) mixtures with 30, 40, and 50% PhTEOS in the silicon precursor mixture. The sensing elements are referred to as Ph30, Ph40 and Ph50, respectively. The films were synthesized by the sol–gel method and affixed to the end of optical fibers by the dip-coating technique. Fourier transform infrared spectroscopy, N2 adsorption–desorption at 77 K and X-ray diffraction analysis were used to characterize the xerogels. At a given pressure of n-hexane, the response of each sensing element decreased with temperature, indicating an exothermic process that confirmed the role of adsorption in the overall performance of the sensing elements. The isosteric adsorption enthalpies were obtained from the calibration curves at different temperatures. The magnitude of the isosteric enthalpy of n-hexane increased with the relative response and reached a plateau that stabilized at approximately −31 kJ mol−1 for Ph40 and Ph50 and at approximately −37 kJ mol−1 for Ph30. This indicates that the adsorbate–adsorbent interaction was dominant at lower relative pressure and condensation of the adsorbate on the mesopores was dominant at higher relative pressure.
Keywords	fiber optic sensors ; isosteric enthalpy of adsorption ; n-hexane ; phenyl-silica ; xerogel films ; Technology ; T ; Chemical technology ; TP1-1185 ; Science ; Q ; Physics ; QC1-999
Subject code	620
Language	English
Publishing date	2017-02-01T00:00:00Z
Publisher	Beilstein-Institut
Document type	Article ; Online
Database	BASE - Bielefeld Academic Search Engine (life sciences selection)

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Article: Encefalitis por anticuerpos antirreceptor de N-metil-D-aspartato (anti-NMDAR): reporte de un caso.

González-Latapi, Paulina / Rodríguez-Violante, Mayela / Cervantes-Arriaga, Amin / Calleja-Castillo, Juan Manuel / González-Aguilar, Alberto

Gaceta medica de Mexico

2014 Volume 150, Issue 4, Page(s) 348–351

Abstract: Anti-N-methyl-D-aspartate receptor encephalitis (anti-NMDAR) is an autoimmune disorder ...

Title translation	Anti-N-Methyl-D-aspartate receptor encephalitis (anti-NMDAR): a case report.
Abstract	Anti-N-methyl-D-aspartate receptor encephalitis (anti-NMDAR) is an autoimmune disorder characterized by neuropsychiatric symptoms, hyperkinetic movements, and even central hypoventilation. Anti-NMDAR encephalitis is a recently described disease, but is already considered one of the most frequent etiologies of noninfectious encephalitis. We report the case of 16-year-old man in which it the presence of anti-NMDAR antibodies in the absence of a neoplasm was identified. Disease course and gradual recovery, as well as a brief review of the syndrome, is presented. To our knowledge this is the first proven case of anti-NMDAR encephalitis in Mexico.
MeSH term(s)	Adolescent ; Anti-N-Methyl-D-Aspartate Receptor Encephalitis/diagnosis ; Humans ; Male
Language	Spanish
Publishing date	2014-07
Publishing country	Mexico
Document type	Case Reports ; English Abstract ; Journal Article
ZDB-ID	425456-9
ISSN	0016-3813
ISSN	0016-3813
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Article ; Online: Histamine-N-methyl transferase polymorphism and risk for multiple sclerosis.

García-Martín, E / Martínez, C / Benito-León, J / Calleja, P / Díaz-Sánchez, M / Pisa, D / Alonso-Navarro, H / Ayuso-Peralta, L / Torrecilla, D / Agúndez, J A G / Jiménez-Jiménez, F J

European journal of neurology

2010 Volume 17, Issue 2, Page(s) 335–338

Abstract: Background: Histamine N-methyltransferase (HNMT) is the main metabolizing enzyme of histamine ...

Abstract	Background: Histamine N-methyltransferase (HNMT) is the main metabolizing enzyme of histamine (a mediator of inflammation implicated in the pathogenesis of multiple sclerosis-MS) in the CNS. We have investigated the possible association between a single nucleotide polymorphism of the HNMT (chromosome 2q22.1), that causes the amino acid substitution Thr105Ile (decreasing enzyme activity) and the risk for MS. Methods: We studied the frequency of the HNMT genotypes and allelic variants in 228 MS patients and 295 healthy controls using a PCR-RLFP method. Results: The frequencies of the HNMT genotypes and allelic variants did not differ significantly between MS patients and controls, and were unrelated with the age of onset of MS, gender, and course of MS. Conclusion: The HNMT polymorphism is not related with the risk for MS.
MeSH term(s)	Adult ; Age of Onset ; Alleles ; Case-Control Studies ; Disease Progression ; European Continental Ancestry Group/genetics ; Female ; Gene Frequency ; Genetic Predisposition to Disease ; Genotype ; Histamine N-Methyltransferase/genetics ; Humans ; Male ; Middle Aged ; Multiple Sclerosis, Chronic Progressive/genetics ; Multiple Sclerosis, Relapsing-Remitting/genetics ; Mutation, Missense ; Polymorphism, Single Nucleotide ; Risk ; Sex Factors ; Spain
Chemical Substances	Histamine N-Methyltransferase (EC 2.1.1.8)
Language	English
Publishing date	2010-02
Publishing country	England
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	1280785-0
ISSN	1468-1331 ; 1351-5101 ; 1471-0552
ISSN (online)	1468-1331
ISSN	1351-5101 ; 1471-0552
DOI	10.1111/j.1468-1331.2009.02720.x
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Zs.A 4738: Show issues			Location: Je nach Verfügbarkeit (siehe Angabe bei Bestand) bis Jg. 1994: Bestellungen von Artikeln über das Online-Bestellformular Jg. 1995 - 2021: Lesesall (2.OG) ab Jg. 2022: Lesesaal (EG)
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Article ; Online: Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.

Kong, X / Albert, S / Bengoechea-Encabo, A / Sanchez-Garcia, M A / Calleja, E / Trampert, A

Nanotechnology

2012 Volume 23, Issue 48, Page(s) 485701

Abstract: ... in transmission electron microscopy as a quick and straightforward method to determine the local indium compositions in (In,Ga)N/GaN ... nanowires. The (In,Ga)N/GaN nanowire heterostructures are grown by plasma assisted molecular beam epitaxy ... electron energy-loss spectroscopy exhibits a linear relation with respect to indium concentration in (In,Ga)N nanowires, allowing ...

Abstract	We demonstrate the potential of low-loss electron energy-loss spectroscopy in transmission electron microscopy as a quick and straightforward method to determine the local indium compositions in (In,Ga)N/GaN nanowires. The (In,Ga)N/GaN nanowire heterostructures are grown by plasma assisted molecular beam epitaxy on Si(111) substrates in a self-assembled way, and on patterned GaN templates in an ordered way. A wide range of indium contents is realized by varying the substrate temperatures. The plasmon peak in low-loss electron energy-loss spectroscopy exhibits a linear relation with respect to indium concentration in (In,Ga)N nanowires, allowing for a direct compositional analysis. The high spatial resolution of this method in combination with structural information from transmission electron microscopy will contribute to a basic understanding of the lattice pulling effect during (In,Ga)N/GaN nanowire growth.
Language	English
Publishing date	2012-12-07
Publishing country	England
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	1362365-5
ISSN	1361-6528 ; 0957-4484
ISSN (online)	1361-6528
ISSN	0957-4484
DOI	10.1088/0957-4484/23/48/485701
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Article ; Online: Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.

Albert, S / Bengoechea-Encabo, A / Sánchez-García, M A / Kong, X / Trampert, A / Calleja, E

Nanotechnology

2013 Volume 24, Issue 17, Page(s) 175303

Abstract: Selective area growth of In(Ga)N/GaN nanocolumns was performed on GaN-buffered Si(111) substrates ... nanohole mask, for the selective area growth. Ordered In(Ga)N/GaN nanocolumns emitting from the ultraviolet ... of the In(Ga)N/GaN nanocolumns emitting at a given wavelength could be substantially improved by tuning ...

Abstract	Selective area growth of In(Ga)N/GaN nanocolumns was performed on GaN-buffered Si(111) substrates by plasma-assisted molecular beam epitaxy. Undoped and Si-doped GaN buffer layers were first grown on Si(111) substrates, showing photoluminescence excitonic emission without traces of other low energy contributions, in particular, the yellow band. The GaN buffer surface roughness (between 10 and 14 nm, the rms value in a 10 × 10 μm(2) area) was low enough to allow the fabrication of a thin (7 nm thick) well defined Ti nanohole mask, for the selective area growth. Ordered In(Ga)N/GaN nanocolumns emitting from the ultraviolet (3.2 eV) to the infrared (0.78 eV) were obtained. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting at a given wavelength could be substantially improved by tuning the In/Ga and total III/N ratios. An estimated internal quantum efficiency of 36% was derived from photoluminescence data for green emitting nanocolumns.
Language	English
Publishing date	2013-05-03
Publishing country	England
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	1362365-5
ISSN	1361-6528 ; 0957-4484
ISSN (online)	1361-6528
ISSN	0957-4484
DOI	10.1088/0957-4484/24/17/175303
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Article ; Online: Lipid-binding antiphospholipid antibodies: significance for pathophysiology and diagnosis of the antiphospholipid syndrome.

Müller-Calleja, Nadine / Ruf, Wolfram / Lackner, Karl J

Critical reviews in clinical laboratory sciences

2024 , Page(s) 1–18

Abstract: The antiphospholipid syndrome (APS) is an autoimmune disease characterized by the presence of pathogenic antiphospholipid antibodies (aPL). Since approximately 30 years ago, lipid-binding aPL, which do not require a protein cofactor, have been regarded ... ...

Abstract	The antiphospholipid syndrome (APS) is an autoimmune disease characterized by the presence of pathogenic antiphospholipid antibodies (aPL). Since approximately 30 years ago, lipid-binding aPL, which do not require a protein cofactor, have been regarded as irrelevant for APS pathogenesis even though anticardiolipin are a diagnostic criterion of APS. In this review, we will summarize the available evidence from
Language	English
Publishing date	2024-01-31
Publishing country	England
Document type	Journal Article ; Review
ZDB-ID	280641-1
ISSN	1549-781X ; 1040-8363 ; 0590-8191
ISSN (online)	1549-781X
ISSN	1040-8363 ; 0590-8191
DOI	10.1080/10408363.2024.2305121
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