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Book ; Online: Demonstration of a monocrystalline GaAs-$\beta$-Ga$_2$O$_3$ p-n heterojunction

Zhou, Jie / Sheikhi, Moheb / Dheenan, Ashok / Abbasi, Haris / Gong, Jiarui / Liu, Yang / Adamo, Carolina / Marshall, Patrick / Wriedt, Nathan / Cheung, Clincy / Qiu, Shuoyang / Ng, Tien Khee / Gan, Qiaoqiang / Gambin, Vincent / Ooi, Boon S. / Rajan, Siddharth / Ma, Zhenqiang

2023

Abstract: ... _2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was ... created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$ ...

Abstract	In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$\beta$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$\Omega\cdot$cm$^2$. Comment: 14 pages, 5 figures
Keywords	Physics - Applied Physics ; Condensed Matter - Materials Science
Publishing date	2023-10-05
Publishing country	us
Document type	Book ; Online
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Article ; Online: Insights from density functional theory calculations on heteroatom P-doped ZnIn

Chong, Wei-Kean / Ng, Boon-Junn / Er, Chen-Chen / Tan, Lling-Lling / Chai, Siang-Piao

Scientific reports

2022 Volume 12, Issue 1, Page(s) 1927

Abstract: ... ...

Abstract	ZnIn
Language	English
Publishing date	2022-02-04
Publishing country	England
Document type	Journal Article
ZDB-ID	2615211-3
ISSN	2045-2322 ; 2045-2322
ISSN (online)	2045-2322
ISSN	2045-2322
DOI	10.1038/s41598-022-05740-8
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Article ; Online: Environmental Robustness and Resilience of Direct-Write Ultrasonic Transducers Made from P(VDF-TrFE) Piezoelectric Coating.

Han, Jin Kyu / Wong, Voon-Kean / Lim, David Boon Kiang / Christopher Subhodayam, Percis Teena / Luo, Ping / Yao, Kui

Sensors (Basel, Switzerland)

2023 Volume 23, Issue 10

Abstract: ... promising for the DWTs made of piezoelectric P(VDF-TrFE) polymer coating with an appropriate protective ...

Abstract	Conformability, lightweight, consistency and low cost due to batch fabrication in situ on host structures are the attractive advantages of ultrasonic transducers made of piezoelectric polymer coatings for structural health monitoring (SHM). However, knowledge about the environmental impacts of piezoelectric polymer ultrasonic transducers is lacking, limiting their widespread use for SHM in industries. The purpose of this work is to evaluate whether direct-write transducers (DWTs) fabricated from piezoelectric polymer coatings can withstand various natural environmental impacts. The ultrasonic signals of the DWTs and properties of the piezoelectric polymer coatings fabricated in situ on the test coupons were evaluated during and after exposure to various environmental conditions, including high and low temperatures, icing, rain, humidity, and the salt fog test. Our experimental results and analyses showed that it is promising for the DWTs made of piezoelectric P(VDF-TrFE) polymer coating with an appropriate protective layer to pass various operational conditions according to US standards.
Language	English
Publishing date	2023-05-12
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2052857-7
ISSN	1424-8220 ; 1424-8220
ISSN (online)	1424-8220
ISSN	1424-8220
DOI	10.3390/s23104696
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Article ; Online: Light-Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte-Assisted Bipolar p-n Junction.

Fang, Shi / Li, Liuan / Wang, Weiyi / Chen, Wei / Wang, Danhao / Kang, Yang / Liu, Xin / Jia, Hongfeng / Luo, Yuanmin / Yu, Huabin / Memon, Muhammad Hunain / Hu, Wei / Ooi, Boon S / He, Jr-Hau / Sun, Haiding

Advanced materials (Deerfield Beach, Fla.)

2023 Volume 35, Issue 28, Page(s) e2300911

Abstract: The p-n junction with bipolar characteristics sets the fundamental unit to build electronics ... Herein, a bipolar-junction photoelectrode employed with a gallium nitride (GaN) p-n homojunction nanowire ...

Abstract	The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed with a gallium nitride (GaN) p-n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuO
MeSH term(s)	Light ; Electrolytes/chemistry ; Photochemistry/instrumentation ; Photochemistry/methods ; Oxides/chemistry ; Ruthenium Compounds/chemistry ; Nanowires/chemistry
Chemical Substances	Electrolytes ; gallium nitride (1R9CC3P9VL) ; Oxides ; Ruthenium Compounds
Language	English
Publishing date	2023-04-20
Publishing country	Germany
Document type	Journal Article
ZDB-ID	1474949-X
ISSN	1521-4095 ; 0935-9648
ISSN (online)	1521-4095
ISSN	0935-9648
DOI	10.1002/adma.202300911
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Article ; Online: A New Highly Conductive Direct Gap p-Type Semiconductor La

Zhang, Nengduo / Liu, Xixia / Lim, David Boon Kiang / Gong, Hao

ACS applied materials & interfaces

2020 Volume 12, Issue 5, Page(s) 6090–6096

Abstract: The absence of a high-performance p-type transparent semiconductor still remains as a roadblock ... to the development of future generation optoelectronics. Here, a highly conducting p-type transparent semiconductor ...

Abstract	The absence of a high-performance p-type transparent semiconductor still remains as a roadblock to the development of future generation optoelectronics. Here, a highly conducting p-type transparent semiconductor based on Y incorporated LaCuOS oxychalcogenide is achieved for the first time, and the maximum Y substitution to obtain a single phase is found to be 25%. By enhancing both the hole mobility and concentration of the LaCuOS phase, Y-substituted oxychalcogenide single-phase La
Language	English
Publishing date	2020-01-21
Publishing country	United States
Document type	Journal Article
ISSN	1944-8252
ISSN (online)	1944-8252
DOI	10.1021/acsami.9b21150
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Article ; Online: Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors.

Liang, Jian-Wei / Firdaus, Yuliar / Kang, Chun Hong / Min, Jung-Wook / Min, Jung-Hong / Al Ibrahim, Redha H / Wehbe, Nimer / Hedhili, Mohamed Nejib / Kaltsas, Dimitrios / Tsetseris, Leonidas / Lopatin, Sergei / Zheng, Shuiqin / Ng, Tien Khee / Anthopoulos, Thomas D / Ooi, Boon S

ACS applied materials & interfaces

2022 Volume 14, Issue 15, Page(s) 17889–17898

Abstract: Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap ...

Abstract	Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10
Language	English
Publishing date	2022-04-11
Publishing country	United States
Document type	Journal Article
ISSN	1944-8252
ISSN (online)	1944-8252
DOI	10.1021/acsami.1c22075
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Article ; Online: The Common ABCA4 Variant p.Asn1868Ile Shows Nonpenetrance and Variable Expression of Stargardt Disease When Present in trans With Severe Variants.

Runhart, Esmee H / Sangermano, Riccardo / Cornelis, Stéphanie S / Verheij, Joke B G M / Plomp, Astrid S / Boon, Camiel J F / Lugtenberg, Dorien / Roosing, Susanne / Bax, Nathalie M / Blokland, Ellen A W / Jacobs-Camps, Marlie H M / van der Velde-Visser, Saskia D / Pott, Jan-Willem R / Rohrschneider, Klaus / Thiadens, Alberta A H J / Klaver, Caroline C W / van den Born, L Ingeborgh / Hoyng, Carel B / Cremers, Frans P M

Investigative ophthalmology & visual science

2018 Volume 59, Issue 8, Page(s) 3220–3231

Abstract: Purpose: To assess the occurrence and the disease expression of the common p.Asn1868Ile variant ... monoallelic ABCA4 variants. In case p.Asn1868Ile was detected, segregation analysis was performed ... whenever possible. Probands and affected siblings harboring p.Asn1868Ile without additional variants in cis were ...

Abstract	Purpose: To assess the occurrence and the disease expression of the common p.Asn1868Ile variant in patients with Stargardt disease (STGD1) harboring known, monoallelic causal ABCA4 variants. Methods: The coding and noncoding regions of ABCA4 were sequenced in 67 and 63 STGD1 probands respectively, harboring monoallelic ABCA4 variants. In case p.Asn1868Ile was detected, segregation analysis was performed whenever possible. Probands and affected siblings harboring p.Asn1868Ile without additional variants in cis were clinically evaluated retrospectively. Two asymptomatic siblings carrying the same ABCA4 variants as their probands were clinically examined. The penetrance of p.Asn1868Ile was calculated using allele frequency data of ABCA4 variants in non-Finnish European individuals. Results: The p.Asn1868Ile variant was found in cis with known variants in 14/67 probands. In 27/67 probands, we identified p.Asn1868Ile without additional variants in cis, in combination with known, mainly severe ABCA4 variants. In 23/27 probands, the trans configuration was established. Among 27 probands and 6/7 STGD1 siblings carrying p.Asn1868Ile, 42% manifested late-onset disease (>44 years). We additionally identified four asymptomatic relatives carrying a combination of a severe variant and p.Asn1868Ile; ophthalmologic examination in two persons did not reveal STGD1. Based on ABCA4 allele frequency data, we conservatively estimated the penetrance of p.Asn1868Ile, when present in trans with a severe variant, to be below 5%. Conclusions: A significant fraction of genetically unexplained STGD1 cases carries p.Asn1868Ile as a second variant. Our findings suggest exceptional differences in disease expression or even nonpenetrance of this ABCA4 variant, pointing toward an important role for genetic or environmental modifiers in STGD1.
MeSH term(s)	ATP-Binding Cassette Transporters/genetics ; Adult ; Age of Onset ; Aged ; Electroretinography ; Female ; Fluorescein Angiography ; Gene Frequency ; Genetic Complementation Test ; Humans ; Macular Degeneration/congenital ; Macular Degeneration/diagnosis ; Macular Degeneration/genetics ; Macular Degeneration/physiopathology ; Male ; Middle Aged ; Mutation ; Pedigree ; Penetrance ; Polymorphism, Single Nucleotide ; Retrospective Studies ; Sequence Analysis, DNA ; Siblings ; Tomography, Optical Coherence ; Visual Acuity/physiology
Chemical Substances	ABCA4 protein, human ; ATP-Binding Cassette Transporters
Language	English
Publishing date	2018-07-03
Publishing country	United States
Document type	Journal Article ; Multicenter Study ; Research Support, Non-U.S. Gov't
ZDB-ID	391794-0
ISSN	1552-5783 ; 0146-0404
ISSN (online)	1552-5783
ISSN	0146-0404
DOI	10.1167/iovs.18-23881
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Book ; Online: Monocrystalline Si/$\beta$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

2023

Abstract: ... electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type ... The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $\beta$-Ga$_2$O$_3$ can face ... band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor ...

Abstract	The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $\beta$-Ga$_2$O$_3$ can face severe challenges in further advancing the $\beta$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$\beta$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$\beta$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $\beta$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$\beta$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $\beta$-Ga$_2$O$_3$-based transistors. Comment: 32 pages, 10 figures. The preliminary data were presented as a poster in the 5th US Gallium Oxide Workshop, Washington, DC. August 07-10, 2022
Keywords	Physics - Applied Physics ; Condensed Matter - Materials Science
Publishing date	2023-05-30
Publishing country	us
Document type	Book ; Online
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Article ; Online: Amyloid-β, p-tau and reactive microglia are pathological correlates of MRI cortical atrophy in Alzheimer's disease.

Frigerio, Irene / Boon, Baayla D C / Lin, Chen-Pei / Galis-de Graaf, Yvon / Bol, John / Preziosa, Paolo / Twisk, Jos / Barkhof, Frederik / Hoozemans, Jeroen J M / Bouwman, Femke H / Rozemuller, Annemieke J M / van de Berg, Wilma D J / Jonkman, Laura E

Brain communications

2021 Volume 3, Issue 4, Page(s) fcab281

Abstract: Alzheimer's disease is characterized by cortical atrophy on MRI and abnormal depositions of amyloid-beta, phosphorylated-tau and inflammation pathologically. However, the relative contribution of these pathological hallmarks to cortical atrophy, a widely ...

Abstract	Alzheimer's disease is characterized by cortical atrophy on MRI and abnormal depositions of amyloid-beta, phosphorylated-tau and inflammation pathologically. However, the relative contribution of these pathological hallmarks to cortical atrophy, a widely used MRI biomarker in Alzheimer's disease, is yet to be defined. Therefore, the aim of this study was to identify the histopathological correlates of MRI cortical atrophy in Alzheimer's disease donors, and its typical amnestic and atypical non-amnestic phenotypes. Nineteen Alzheimer's disease (of which 10 typical and 9 atypical) and 10 non-neurological control brain donors underwent post-mortem
Language	English
Publishing date	2021-11-24
Publishing country	England
Document type	Journal Article
ISSN	2632-1297
ISSN (online)	2632-1297
DOI	10.1093/braincomms/fcab281
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Article ; Online: Natural Human Infections with Plasmodium cynomolgi, P. inui, and 4 other Simian Malaria Parasites, Malaysia.

Yap, Nan Jiun / Hossain, Hanisah / Nada-Raja, Thamayanthi / Ngui, Romano / Muslim, Azdayanti / Hoh, Boon-Peng / Khaw, Loke Tim / Kadir, Khamisah Abdul / Simon Divis, Paul Cliff / Vythilingam, Indra / Singh, Balbir / Lim, Yvonne Ai-Lian

Emerging infectious diseases

2021 Volume 27, Issue 8, Page(s) 2187–2191

Abstract: We detected the simian malaria parasites Plasmodium knowlesi, P. cynomolgi, P. inui, P. coatneyi, P ... inui-like, and P. simiovale among forest fringe-living indigenous communities from various locations ...

Abstract	We detected the simian malaria parasites Plasmodium knowlesi, P. cynomolgi, P. inui, P. coatneyi, P. inui-like, and P. simiovale among forest fringe-living indigenous communities from various locations in Malaysia. Our findings underscore the importance of using molecular tools to identify newly emergent malaria parasites in humans.
MeSH term(s)	Animals ; Humans ; Macaca fascicularis ; Malaria/diagnosis ; Malaria/epidemiology ; Malaysia/epidemiology ; Parasites ; Plasmodium/genetics ; Plasmodium cynomolgi/genetics ; Plasmodium knowlesi/genetics
Language	English
Publishing date	2021-07-21
Publishing country	United States
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	1380686-5
ISSN	1080-6059 ; 1080-6040
ISSN (online)	1080-6059
ISSN	1080-6040
DOI	10.3201/eid2708.204502
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Zs.A 4778: Show issues

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