Article ; Online: Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics.
ACS applied materials & interfaces
2024 Volume 16, Issue 11, Page(s) 14064–14071
Abstract: Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is ... ...
Abstract | Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is formed due to the metal-induced gap states (MIGS), which greatly hinder the development of 2D semiconductor transistors in large-scale integrated circuits. Meanwhile, most air-stable 2D semiconductors are nonmagnetic, limiting the possibility of spintronic application. Here, we report a new strategy to suppress the MIGS and reduce the Schottky barrier height on 2D semiconductors (MoS |
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Language | English |
Publishing date | 2024-03-07 |
Publishing country | United States |
Document type | Journal Article |
ISSN | 1944-8252 |
ISSN (online) | 1944-8252 |
DOI | 10.1021/acsami.3c19260 |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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