Article ; Online: J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications.
ACS nano
2024 Volume 18, Issue 17, Page(s) 11404–11415
Abstract: ... of the vertically stacked junction and metal-insulator-semiconductor (MIS) gate structure, named J-MISFET. It shows ...
Abstract | High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors and ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching device consisting of the vertically stacked junction and metal-insulator-semiconductor (MIS) gate structure, named J-MISFET. It shows excellent device performances of low operating voltage (<0.5 V), drain current ON/OFF ratio (∼4.7 × 10 |
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Language | English |
Publishing date | 2024-04-17 |
Publishing country | United States |
Document type | Journal Article |
ISSN | 1936-086X |
ISSN (online) | 1936-086X |
DOI | 10.1021/acsnano.4c01450 |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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