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Article ; Online: Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM.

da Silva, Bruno César / Sadre Momtaz, Zahra / Monroy, Eva / Okuno, Hanako / Rouviere, Jean-Luc / Cooper, David / Den Hertog, Martien Ilse

Nano letters

2022

Abstract: ... measure active dopants at the nanometer scale. In a p-n junction, the abruptness of the dopant profile ...

Abstract	A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. In a p-n junction, the abruptness of the dopant profile around the metallurgical junction directly influences the electric field. Here, a contacted nominally symmetric and highly doped (
Language	English
Publishing date	2022-11-28
Publishing country	United States
Document type	Journal Article
ISSN	1530-6992
ISSN (online)	1530-6992
DOI	10.1021/acs.nanolett.2c03684
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Book ; Online: Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

da Silva, Bruno C. / Momtaz, Zahra S. / Monroy, Eva / Okuno, Hanako / Rouviere, Jean-Luc / Cooper, David / den-Hertog, Martien I.

2022

Abstract: ... electron holography have opened up the possibility of studying the electrostatic properties of a p-n ... junction with nm-scale spatial resolution. The complete description of a p-n junction must take ... a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field ...

Abstract	A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution. Comment: 13 pages, 5 figures
Keywords	Physics - Applied Physics ; Condensed Matter - Materials Science
Subject code	530
Publishing date	2022-09-20
Publishing country	us
Document type	Book ; Online
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Book ; Online: The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM

da Silva, Bruno C / Momtaz, Zahra S / Bruas, Lucas / Rouviére, Jean-Luc / Okuno, Hanako / Cooper, David / Den-Hertog, Martien I

2022

Abstract: ... the long range built-in electric field of a silicon p-n junction. The effect of different STEM modes and ...

Abstract	Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of different STEM modes and the trade-off between spatial resolution and electric field sensitivity are studied. Two acquisition modes are compared: nanobeam and low magnification (LM) modes. A thermal noise free Medipix3 direct electron detector with high speed acquisition has been used to study the influence of low electron beam current and millisecond dwell times on the measured electric field and standard deviation. It is shown that LM conditions can underestimate the electric field values due to a bigger probe size used but provide an improvement of almost one order of magnitude on the signal-to-noise ratio, leading to a detection limit of 0.011MV/cm. It is observed that the CoM results do not vary with acquisition time or electron dose as low as 24 $e^-/A^2$, showing that the electron beam does not influence the built-in electric field and that this method can be robust for studying beam sensitive materials, where a low dose is needed.
Keywords	Physics - Applied Physics ; Condensed Matter - Materials Science
Subject code	621
Publishing date	2022-11-02
Publishing country	us
Document type	Book ; Online
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Article ; Online: Intermolecular Reductive C-N Cross Coupling of Nitroarenes and Boronic Acids by P

Nykaza, Trevor V / Cooper, Julian C / Li, Gen / Mahieu, Nolwenn / Ramirez, Antonio / Luzung, Michael R / Radosevich, Alexander T

Journal of the American Chemical Society

2018 Volume 140, Issue 45, Page(s) 15200–15205

Abstract: A main group-catalyzed method for the synthesis of aryl- and heteroarylamines by intermolecular C-N ...

Abstract	A main group-catalyzed method for the synthesis of aryl- and heteroarylamines by intermolecular C-N coupling is reported. The method employs a small-ring organophosphorus-based catalyst (1,2,2,3,4,4-hexamethylphosphetane) and a terminal hydrosilane reductant (phenylsilane) to drive reductive intermolecular coupling of nitro(hetero)arenes with boronic acids. Applications to the construction of both C
MeSH term(s)	Boronic Acids/chemistry ; Catalysis ; Molecular Structure ; Nitro Compounds/chemistry ; Organothiophosphorus Compounds/chemistry ; Oxidation-Reduction
Chemical Substances	Boronic Acids ; Nitro Compounds ; Organothiophosphorus Compounds
Language	English
Publishing date	2018-11-02
Publishing country	United States
Document type	Journal Article ; Research Support, N.I.H., Extramural ; Research Support, Non-U.S. Gov't
ZDB-ID	3155-0
ISSN	1520-5126 ; 0002-7863
ISSN (online)	1520-5126
ISSN	0002-7863
DOI	10.1021/jacs.8b10769
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Article ; Online: p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation.

Chen, Le / Yang, Jinhui / Klaus, Shannon / Lee, Lyman J / Woods-Robinson, Rachel / Ma, Jie / Lum, Yanwei / Cooper, Jason K / Toma, Francesca M / Wang, Lin-Wang / Sharp, Ian D / Bell, Alexis T / Ager, Joel W

Journal of the American Chemical Society

2015 Volume 137, Issue 30, Page(s) 9595–9603

Abstract: ... for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical ... SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance ... The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP ...

Abstract	Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCo2O4 as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a np(+) structure and by incorporating a highly active heterogeneous Ni-Fe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cm(-2). Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCo2O4 during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCo2O4 produces only small changes in its hole conductivity, while a thicker SiOx layer is formed at the n-Si/p-NiCo2O4 interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCo2O4 heterojunction photoanodes.
Language	English
Publishing date	2015-08-05
Publishing country	United States
Document type	Journal Article
ZDB-ID	3155-0
ISSN	1520-5126 ; 0002-7863
ISSN (online)	1520-5126
ISSN	0002-7863
DOI	10.1021/jacs.5b03536
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Article ; Online: Provider perspectives on essential functions for care management in the collaborative treatment of hypertension: the P.A.R.T.N.E.R. framework.

Hussain, Tanvir / Allen, Allyssa / Halbert, Jennifer / Anderson, Cheryl A M / Boonyasai, Romsai Tony / Cooper, Lisa A

Journal of general internal medicine

2014 Volume 30, Issue 4, Page(s) 454–461

Abstract: ... of patients. The P.A.R.T.N.E.R. framework summarizes the care management functions that providers reported ... patients and/or provider(s).: Conclusions: The P.A.R.T.N.E.R. framework is the first to offer ...

Abstract	Background: Care management has become a widespread strategy for improving chronic illness care. However, primary care provider (PCP) participation in programs has been poor. Because the success of care management relies on provider engagement, understanding provider perspectives is necessary. Objective: Our goal was to identify care management functions most valuable to PCPs in hypertension treatment. Design: Six focus groups were conducted to discuss current challenges in hypertension care and identify specific functions of care management that would improve care. Participants: The study included 39 PCPs (participation rate: 83 %) representing six clinics, two of which care for large African American populations and four that are in underserved locations, in the greater Baltimore metropolitan area. Approach: This was a qualitative analysis of focus groups, using grounded theory and iterative coding. Key results: Providers desired achieving blood pressure control more rapidly. Collaborating with care managers who obtain ongoing patient data would allow treatment plans to be tailored to the changing life conditions of patients. The P.A.R.T.N.E.R. framework summarizes the care management functions that providers reported were necessary for effective collaboration: Partner with patients, providers, and the community; Arrange follow-up care; Resolve barriers to adherence; Track treatment response and progress; Navigate the health care system with patients; Educate patients & Engage patients in self-management; Relay information between patients and/or provider(s). Conclusions: The P.A.R.T.N.E.R. framework is the first to offer a checklist of care management functions that may promote successful collaboration with PCPs. Future research should examine the validity of this framework in various settings and for diverse patient populations affected by chronic diseases.
MeSH term(s)	Cooperative Behavior ; Disease Management ; Female ; Focus Groups ; Humans ; Hypertension/diagnosis ; Hypertension/therapy ; Nurse Practitioners ; Patient Care Management/methods ; Physician Assistants ; Physicians, Primary Care ; Primary Health Care/methods ; Treatment Outcome
Language	English
Publishing date	2014-12-17
Publishing country	United States
Document type	Journal Article ; Research Support, N.I.H., Extramural ; Research Support, Non-U.S. Gov't
ZDB-ID	639008-0
ISSN	1525-1497 ; 0884-8734
ISSN (online)	1525-1497
ISSN	0884-8734
DOI	10.1007/s11606-014-3130-4
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Book ; Online: Characteristics of Signals Originating Near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

The MAJORANA Collaboration / Aguayo, E. / Amman, M. / Avignone III, F. T. / Barabash, A. S. / Barton, P. J. / Beene, J. R. / Bertrand, F. E. / Boswell, M. / Brudanin, V. / Busch, M. / Chan, Y-D. / Christofferson, C. D. / Collar, J. I. / Combs, D. C. / Cooper, R. J. / Detwiler, J. A. / Doe, P. J. / Efremenko, Yu. /

Egorov, V. / Ejiri, H. / Elliott, S. R. / Esterline, J. / Fast, J. E. / Fields, N. / Finnerty, P. / Fraenkle, F. M. / Galindo-Uribarri, A. / Gehman, V. M. / Giovanetti, G. K. / Green, M. P. / Guiseppe, V. E. / Gusey, K. / Hallin, A. L. / Hazama, R. / Henning, R. / Hoppe, E. W. / Horton, M. / Howard, S. / Howe, M. A. / Johnson, R. A. / Keeter, K. J. / Kidd, M. F. / Knecht, A. / Kochetov, O. / Konovalov, S. I. / Kouzes, R. T. / LaFerriere, B. D. / Leon, J. / Leviner, L. E. / Loach, J. C. / Looker, Q. / Luke, P. N. / MacMullin, S. / Marino, M. G. / Martin, R. D. / Merriman, J. H. / Miller, M. L. / Mizouni, L. / Nomachi, M. / Orrell, J. L. / Overman, N. R. / Perumpilly, G. / Phillips II, D. G. / Poon, A. W. P. / Radford, D. C. / Rielage, K. / Robertson, R. G. H. / Ronquest, M. C. / Schubert, A. G. / Shima, T. / Shirchenko, M. / Snavely, K. J. / Steele, D. / Strain, J. / Timkin, V. / Tornow, W. / Varner, R. L. / Vetter, K. / Vorren, K. / Wilkerson, J. F. / Yakushev, E. / Yaver, H. / Young, A. R. / Yu, C. -H. / Yumatov, V.

2012

Abstract: A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC ... and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region ...

Abstract	A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein. Comment: 32 pages, 14 figures, submitted to Nucl. Instrum. Meth. A
Keywords	Physics - Instrumentation and Detectors ; High Energy Physics - Experiment ; Nuclear Experiment
Subject code	621
Publishing date	2012-07-28
Publishing country	us
Document type	Book ; Online
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Article: p-Type Transparent Conducting Oxide/n-Type Semiconductor Heterojunctions for Efficient and Stable Solar Water Oxidation

Chen, Le / Ager Joel W / Bell Alexis T / Cooper Jason K / Klaus Shannon / Lee Lyman J / Lum Yanwei / Ma Jie / Sharp Ian D / Toma Francesca M / Wang Lin-Wang / Woods-Robinson Rachel / Yang Jinhui

Journal of the American Chemical Society. 2015 Aug. 05, v. 137, no. 30

2015

Abstract: ... for photoanodes used in light-driven water oxidation. Using NiCoâOâ as the p-TCO and n-type Si ... while a thicker SiOâ layer is formed at the n-Si/p-NiCoâOâ interface, greatly reducing the PEC performance ... The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP ...

Abstract	Achieving stable operation of photoanodes used as components of solar water splitting devices is critical to realizing the promise of this renewable energy technology. It is shown that p-type transparent conducting oxides (p-TCOs) can function both as a selective hole contact and corrosion protection layer for photoanodes used in light-driven water oxidation. Using NiCoâOâ as the p-TCO and n-type Si as a prototypical light absorber, a rectifying heterojunction capable of light driven water oxidation was created. By placing the charge separating junction in the Si using a npâº structure and by incorporating a highly active heterogeneous NiâFe oxygen evolution catalyst, efficient light-driven water oxidation can be achieved. In this structure, oxygen evolution under AM1.5G illumination occurs at 0.95 V vs RHE, and the current density at the reversible potential for water oxidation (1.23 V vs RHE) is >25 mA cmâÂ². Stable operation was confirmed by observing a constant current density over 72 h and by sensitive measurements of corrosion products in the electrolyte. In situ Raman spectroscopy was employed to investigate structural transformation of NiCoâOâ during electrochemical oxidation. The interface between the light absorber and p-TCO is crucial to produce selective hole conduction to the surface under illumination. For example, annealing to produce more crystalline NiCoâOâ produces only small changes in its hole conductivity, while a thicker SiOâ layer is formed at the n-Si/p-NiCoâOâ interface, greatly reducing the PEC performance. The generality of the p-TCO protection approach is demonstrated by multihour, stable, water oxidation with n-InP/p-NiCoâOâ heterojunction photoanodes.
Keywords	annealing ; catalysts ; corrosion ; electrochemistry ; electrolytes ; lighting ; oxidation ; oxides ; oxygen production ; Raman spectroscopy ; renewable energy sources ; semiconductors ; silicon
Language	English
Dates of publication	2015-0805
Size	p. 9595-9603.
Publishing place	American Chemical Society
Document type	Article
ZDB-ID	3155-0
ISSN	1520-5126 ; 0002-7863
ISSN (online)	1520-5126
ISSN	0002-7863
DOI	10.1021%2Fjacs.5b03536
Database	NAL-Catalogue (AGRICOLA)

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Article ; Online: Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling.

Cooper, D / Truche, R / Twitchett-Harrison, A C / Dunin-Borkowski, R E / Midgley, P A

Journal of microscopy

2009 Volume 233, Issue 1, Page(s) 102–113

Abstract: Focused Ion beam (FIB) prepared GaAs p-n junctions have been examined using off-axis electron ...

Abstract	Focused Ion beam (FIB) prepared GaAs p-n junctions have been examined using off-axis electron holography. Initial analysis of the holograms reveals an experimentally determined built-in potential in the junctions that is significantly smaller than predicted from theory. In this paper we show that through combinations of in situ annealing and in situ biasing of the specimens, by varying the intensity of the incident electron beam, and by modifying the FIB operating parameters, we can develop an improved understanding of phenomena such as the electrically 'inactive' thickness and subsequently recover the predicted value of the built-in potential of the junctions. PACS numbers: 85.30.De.
Language	English
Publishing date	2009-01
Publishing country	England
Document type	Journal Article ; Research Support, Non-U.S. Gov't
ZDB-ID	219263-9
ISSN	1365-2818 ; 0022-2720
ISSN (online)	1365-2818
ISSN	0022-2720
DOI	10.1111/j.1365-2818.2008.03101.x
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Article: Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling

COOPER, D / TRUCHE, R / TWITCHETT-HARRISON, A.C / DUNIN-BORKOWSKI, R.E / MIDGLEY, P.A

Journal of microscopy. 2009 Jan., v. 233, no. 1

2009

Abstract: Focused Ion beam (FIB) prepared GaAs p-n junctions have been examined using off-axis electron ...

Abstract	Focused Ion beam (FIB) prepared GaAs p-n junctions have been examined using off-axis electron holography. Initial analysis of the holograms reveals an experimentally determined built-in potential in the junctions that is significantly smaller than predicted from theory. In this paper we show that through combinations of in situ annealing and in situ biasing of the specimens, by varying the intensity of the incident electron beam, and by modifying the FIB operating parameters, we can develop an improved understanding of phenomena such as the electrically 'inactive' thickness and subsequently recover the predicted value of the built-in potential of the junctions. PACS numbers: 85.30.De
Language	English
Dates of publication	2009-01
Size	p. 102-113.
Publishing place	Blackwell Publishing Ltd
Document type	Article
ZDB-ID	219263-9
ISSN	1365-2818 ; 0022-2720
ISSN (online)	1365-2818
ISSN	0022-2720
DOI	10.1111/j.1365-2818.2008.03101.x
Database	NAL-Catalogue (AGRICOLA)

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