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  1. Article ; Online: [Ge

    Li, Guangmao / Wu, Kui / Huang, Yi / Yang, Zhihua / Pan, Shilie

    Chemistry (Weinheim an der Bergstrasse, Germany)

    2019  Volume 25, Issue 21, Page(s) 5440–5444

    Abstract: Metal-centered ... ...

    Abstract Metal-centered MS
    Language English
    Publishing date 2019-03-26
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1478547-x
    ISSN 1521-3765 ; 0947-6539
    ISSN (online) 1521-3765
    ISSN 0947-6539
    DOI 10.1002/chem.201901012
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  2. Article ; Online: High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic-photonic integrated circuits at telecommunication wavelengths.

    Huang, Tzu-Yang / Bansal, Radhika / Ghosh, Soumava / Lee, Kwang Hong / Chen, Qimiao / Tan, Chuan Seng / Chang, Guo-En

    Optics letters

    2024  Volume 49, Issue 5, Page(s) 1281–1284

    Abstract: ... were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge active layer ...

    Abstract We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic-photonic integrated circuits (EPICs) operating at telecommunication wavelengths. The GeOI samples were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge active layer was achieved. Planar lateral p-i-n WGPDs were fabricated and characterized, and they exhibited a low dark current of 0.1 µA. Strain-induced alterations in the optical properties were observed, resulting in an extended photodetection range up to λ = 1638 nm. This range encompasses crucial telecommunication bands. The WGPDs exhibited a high responsivity of 0.56 A/W and a high detectivity of
    Language English
    Publishing date 2024-03-01
    Publishing country United States
    Document type Journal Article
    ISSN 1539-4794
    ISSN (online) 1539-4794
    DOI 10.1364/OL.517863
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Liang-Ge-San

    Liling Yang / Lijun Yan / Weifu Tan / Xiangjun Zhou / Guangli Yang / Jingtao Yu / Zibin Lu / Yong Liu / Liyi Zou / Wei Li / Linzhong Yu

    Frontiers in Pharmacology, Vol

    a classic traditional Chinese medicine formula, attenuates acute inflammation via targeting GSK3β

    2023  Volume 14

    Abstract: ... that burden the world, but there is still a lack of more effective and reliable drug treatment. Liang-Ge-San ...

    Abstract Sepsis is a serious life-threatening health disorder with high morbidity and mortality rates that burden the world, but there is still a lack of more effective and reliable drug treatment. Liang-Ge-San (LGS) has been shown to have anti-inflammatory effects and is a promising candidate for the treatment of sepsis. However, the anti-sepsis mechanism of LGS has still not been elucidated. In this study, a set of genes related to inflammatory chemotaxis pathways was downloaded from Encyclopedia of Genes and Genomes (KEGG) and integrated with sepsis patient information from the Gene Expression Omnibus (GEO) database to perform differential gene expression analysis. Glycogen synthase kinase-3β (GSK-3β) was found to be the feature gene after these important genes were examined using the three algorithms Random Forest, support vector machine recursive feature elimination (SVM-REF), and least absolute shrinkage and selection operator (LASSO), and then intersected with possible treatment targets of LGS found through the search. Upon evaluation, the receiver operating characteristic (ROC) curve of GSK-3β indicated an important role in the pathogenesis of sepsis. Immune cell infiltration analysis suggested that GSK-3β expression was associated with a variety of immune cells, including neutrophils and monocytes. Next, lipopolysaccharide (LPS)-induced zebrafish inflammation model and macrophage inflammation model was used to validate the mechanism of LGS. We found that LGS could protect zebrafish against a lethal challenge with LPS by down-regulating GSK-3β mRNA expression in a dose-dependent manner, as indicated by a decreased neutrophils infiltration and reduction of inflammatory damage. The upregulated mRNA expression of GSK-3β in LPS-induced stimulated RAW 264.7 cells also showed the same tendency of depression by LGS. Critically, LGS could induce M1 macrophage polarization to M2 through promoting GSK-3β inactivation of phosphorylation. Taken together, we initially showed that anti-septic effects of LGS is related to the ...
    Keywords Liang-Ge-San ; traditional Chinese medicine ; sepsis ; acute inflammation ; LPS ; GSK-3β ; Therapeutics. Pharmacology ; RM1-950
    Subject code 570
    Language English
    Publishing date 2023-06-01T00:00:00Z
    Publisher Frontiers Media S.A.
    Document type Article ; Online
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  4. Article ; Online: Monolithically integrated 940 nm VCSELs on bulk Ge substrates.

    Wan, Zeyu / Yang, Yun-Cheng / Chen, Wei-Hsin / Chiu, Chih-Chuan / Zhao, Yunlong / Feifel, Markus / Chrostowski, Lukas / Lackner, David / Wu, Chao-Hsin / Xia, Guangrui

    Optics express

    2024  Volume 32, Issue 4, Page(s) 6609–6618

    Abstract: This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication ... technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge ... substrates. This is the second successful Ge-based VCSEL technology reported worldwide and the first Ge-based ...

    Abstract This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-based VCSEL technology reported worldwide and the first Ge-based VCSEL technology with key details disclosed, including Ge substrate specification, transition layer structure and composition, and fabrication process. Compared with the GaAs counterparts, after epitaxy optimization, the Ge-based VCSEL wafer has a 40% lower surface root-mean-square roughness and 72% lower average bow-warp. After device fabrication, the Ge-based VCSEL has a 10% lower threshold current density and 19% higher maximum optical differential efficiency than the GaAs-based VCSEL.
    Language English
    Publishing date 2024-03-04
    Publishing country United States
    Document type Journal Article
    ZDB-ID 1491859-6
    ISSN 1094-4087 ; 1094-4087
    ISSN (online) 1094-4087
    ISSN 1094-4087
    DOI 10.1364/OE.513997
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Effects of phosphorous and antimony doping on thin Ge layers grown on Si.

    Yu, Xueying / Jia, Hui / Yang, Junjie / Masteghin, Mateus G / Beere, Harvey / Mtunzi, Makhayeni / Deng, Huiwen / Huo, Suguo / Chen, Chong / Chen, Siming / Tang, Mingchu / Sweeney, Stephen J / Ritchie, David / Seeds, Alwyn / Liu, Huiyun

    Scientific reports

    2024  Volume 14, Issue 1, Page(s) 7969

    Abstract: Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si ... An advanced growth strategy is desired to minimize the TD density within a thin Ge buffer layer in Ge-on-Si ... systems. In this work, we investigate the impact of P dopants in 500-nm thin Ge layers, with doping ...

    Abstract Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic and electronic devices. An advanced growth strategy is desired to minimize the TD density within a thin Ge buffer layer in Ge-on-Si systems. In this work, we investigate the impact of P dopants in 500-nm thin Ge layers, with doping concentrations from 1 to 50 × 10
    Language English
    Publishing date 2024-04-04
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-024-57937-8
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  6. Article ; Online: Achieving High-Performance Ge

    Sun, Qiang / Shi, Xiao-Lei / Hong, Min / Yin, Yu / Xu, Sheng-Duo / Chen, Jie / Yang, Lei / Zou, Jin / Chen, Zhi-Gang

    Small (Weinheim an der Bergstrasse, Germany)

    2021  Volume 18, Issue 6, Page(s) e2105923

    Abstract: In this work, a ... ...

    Abstract In this work, a LaB
    Language English
    Publishing date 2021-12-02
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 2168935-0
    ISSN 1613-6829 ; 1613-6810
    ISSN (online) 1613-6829
    ISSN 1613-6810
    DOI 10.1002/smll.202105923
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  7. Article ; Online: Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique.

    Shu, Qijiang / Huang, Pengru / Yang, Fuhua / Yang, Linjing / Chen, Lei

    Scientific reports

    2023  Volume 13, Issue 1, Page(s) 7511

    Abstract: We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge ... In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have ...

    Abstract We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2-4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs conformed to Stranski-Krastanow mode, but the typical thickness of the wetting layer was nearly three times higher than those derived from conventional technologies such as molecular beam epitaxy, chemical vapor deposition, solid phase epitaxy and so on. Meanwhile, the shape evolution of QDs was very different from existing reports. The specific internal causes of these novel phenomena were analyzed and confirmed and reported in this paper. In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have the most excellent morphology, structure, and optoelectronic performance. Our work lays a foundation for further exploration of the controllable growth of QDs at high deposition rates, which is a new way to realize the industrialization of QDs used for future devices.
    Language English
    Publishing date 2023-05-09
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-023-34284-8
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  8. Book ; Online: GE-SpMM

    Huang, Guyue / Dai, Guohao / Wang, Yu / Yang, Huazhong

    General-purpose Sparse Matrix-Matrix Multiplication on GPUs for Graph Neural Networks

    2020  

    Abstract: ... from SpMV. To tackle these challenges, we propose GE-SpMM. GE-SpMM performs SpMM-like operation on sparse ... on a real-world graph dataset show that GE-SpMM achieves up to 1.41X speedup over Nvidia cuSPARSE and up ... to 1.81X over GraphBLAST. We also embed GE-SpMM in GNN frameworks and get up to 3.67X speedup over ...

    Abstract Graph Neural Networks (GNNs) have achieved significant improvements in various domains. Sparse Matrix-Matrix multiplication (SpMM) is a fundamental operator in GNNs, which performs a multiplication between a sparse matrix and a dense matrix. Accelerating SpMM on parallel hardware like GPUs can face the following challenges: From the GNN application perspective, the compatibility needs to be considered. General GNN algorithms require SpMM-like operations (e.g., pooling) between matrices, which are not supported in current high-performance GPU libraries (e.g., Nvidia cuSPARSE). Moreover, the sophisticated preprocessing in previous implementations will lead to heavy data format conversion overheads in GNN frameworks. From the GPU hardware perspective, optimizations in SpMV (Sparse Matrix-Vector) designs on GPUs do not apply well to SpMM. SpMM exposes the column-wise parallelism in the dense output matrix, but straightforward generalization from SpMV leads to inefficient, uncoalesced access to sparse matrix in global memory. The sparse row data can be reused among GPU threads, which is neither possible in SpMM designs inherited from SpMV. To tackle these challenges, we propose GE-SpMM. GE-SpMM performs SpMM-like operation on sparse matrices represented in the most common Compressed Sparse Row (CSR) format, so it can be embedded in GNN frameworks with no preprocessing overheads and support general GNN algorithms. We introduce the Coalesced Row Caching method to process columns in parallel and ensure coalesced access to sparse matrix data. We also present the Coarse-grained Warp Merging to reduce redundant data loading among GPU warps. Experiments on a real-world graph dataset show that GE-SpMM achieves up to 1.41X speedup over Nvidia cuSPARSE and up to 1.81X over GraphBLAST. We also embed GE-SpMM in GNN frameworks and get up to 3.67X speedup over popular GNN models like GCN and GraphSAGE.

    Comment: To appear in International Conference for High Performance Computing, Networking, Storage, and Analysis (SC'20)
    Keywords Computer Science - Distributed ; Parallel ; and Cluster Computing
    Subject code 005
    Publishing date 2020-07-06
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  9. Article: Ge N-Channel MOSFETs with ZrO

    Chou, Lulu / Liu, Yan / Xu, Yang / Peng, Yue / Liu, Huan / Yu, Xiao / Han, Genquan / Hao, Yue

    Nanoscale research letters

    2021  Volume 16, Issue 1, Page(s) 125

    Abstract: High-mobility Ge nMOSFETs with ZrO ...

    Abstract High-mobility Ge nMOSFETs with ZrO
    Language English
    Publishing date 2021-08-04
    Publishing country United States
    Document type Journal Article
    ZDB-ID 2253244-4
    ISSN 1556-276X ; 1931-7573
    ISSN (online) 1556-276X
    ISSN 1931-7573
    DOI 10.1186/s11671-021-03577-0
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  10. Article ; Online: Active magnetic dipole emission by the Ge

    Zhou, Mimi / Deng, Xiong / Fan, Menghui / Yang, Qin / Zhang, Yao / Zhou, Chaobiao / Liu, Jiangtao

    Optics letters

    2021  Volume 46, Issue 19, Page(s) 4952–4955

    Abstract: Active light manipulation plays a critical role in nanophotonics. In this Letter, we investigate the modulation properties of magnetic dipole (MD) emission based on the phase change ... ...

    Abstract Active light manipulation plays a critical role in nanophotonics. In this Letter, we investigate the modulation properties of magnetic dipole (MD) emission based on the phase change material
    Language English
    Publishing date 2021-10-01
    Publishing country United States
    Document type Journal Article
    ISSN 1539-4794
    ISSN (online) 1539-4794
    DOI 10.1364/OL.440396
    Database MEDical Literature Analysis and Retrieval System OnLINE

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