LIVIVO - Search results -

Search results

Result 1 - 10 of total 1577

Search options

Article: Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate.

Han, Zhanfei / Li, Xiangdong / Wang, Hongyue / Liu, Yuebo / Yang, Weitao / Lv, Zesheng / Wang, Meng / You, Shuzhen / Zhang, Jincheng / Hao, Yue

Micromachines

2024 Volume 15, Issue 1

Abstract: This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors ... in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading ...

Abstract	This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 10
Language	English
Publishing date	2024-01-20
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2620864-7
ISSN	2072-666X
ISSN	2072-666X
DOI	10.3390/mi15010156
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

Article ; Online: Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source.

Zeng, Hong / He, Zhao-Qin / Fan, Yun-Ru / Luo, Yue / Lyu, Chen / Wu, Jin-Peng / Li, Yun-Bo / Liu, Sheng / Wang, Dong / Zhang, De-Chao / Zeng, Juan-Juan / Deng, Guang-Wei / Wang, You / Song, Hai-Zhi / Wang, Zhen / You, Li-Xing / Guo, Kai / Sun, Chang-Zheng / Luo, Yi /

Guo, Guang-Can / Zhou, Qiang

Physical review letters

2024 Volume 132, Issue 13, Page(s) 133603

Abstract: ... Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light ... source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero ...

Abstract	An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.
Language	English
Publishing date	2024-04-13
Publishing country	United States
Document type	Journal Article
ZDB-ID	208853-8
ISSN	1079-7114 ; 0031-9007
ISSN (online)	1079-7114
ISSN	0031-9007
DOI	10.1103/PhysRevLett.132.133603
Database	MEDical Literature Analysis and Retrieval System OnLINE

In stock of ZB MED Bonn / Germany

Z 4' 58/153: Show issues

Order via subito

Inter-library loan at ZB MED

Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

Details ▾
- See ZB MED holdings
- Order with fees

Book ; Online: GAN Vocoder

You, Jaeseong / Kim, Dalhyun / Nam, Gyuhyeon / Hwang, Geumbyeol / Chae, Gyeongsu

Multi-Resolution Discriminator Is All You Need

2021

Abstract: Several of the latest GAN-based vocoders show remarkable achievements, outperforming autoregressive ...

Abstract	Several of the latest GAN-based vocoders show remarkable achievements, outperforming autoregressive and flow-based competitors in both qualitative and quantitative measures while synthesizing orders of magnitude faster. In this work, we hypothesize that the common factor underlying their success is the multi-resolution discriminating framework, not the minute details in architecture, loss function, or training strategy. We experimentally test the hypothesis by evaluating six different generators paired with one shared multi-resolution discriminating framework. For all evaluative measures with respect to text-to-speech syntheses and for all perceptual metrics, their performances are not distinguishable from one another, which supports our hypothesis. Comment: Accepted to Interspeech 2021
Keywords	Computer Science - Sound ; Computer Science - Machine Learning ; Electrical Engineering and Systems Science - Audio and Speech Processing
Publishing date	2021-03-09
Publishing country	us
Document type	Book ; Online
Database	BASE - Bielefeld Academic Search Engine (life sciences selection)

Full text online

Full text

Inter-library loan at ZB MED

Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

Article: Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate.

Weng, You-Chen / Hsiao, Ming-Yao / Lin, Chun-Hsiung / Lan, Yu-Pin / Chang, Edward-Yi

Materials (Basel, Switzerland)

2023 Volume 16, Issue 9

Abstract: A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and ... an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio ... was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer ...

Abstract	A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum I
Language	English
Publishing date	2023-04-26
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2487261-1
ISSN	1996-1944
ISSN	1996-1944
DOI	10.3390/ma16093376
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

Article ; Online: Polarized Object Surface Reconstruction Algorithm Based on RU-GAN Network.

Yang, Xu / Cheng, Cai / Duan, Jin / Hao, You-Fei / Zhu, Yong / Zhang, Hao

Sensors (Basel, Switzerland)

2023 Volume 23, Issue 7

Abstract: ... adversarial network (RU-Gan) based on jump compensation is designed for fusing six surface normal vectors ...

Abstract	There are six possible solutions for the surface normal vectors obtained from polarization information during 3D reconstruction. To resolve the ambiguity of surface normal vectors, scholars have introduced additional information, such as shading information. However, this makes the 3D reconstruction task too burdensome. Therefore, in order to make the 3D reconstruction more generally applicable, this paper proposes a complete framework to reconstruct the surface of an object using only polarized images. To solve the ambiguity problem of surface normal vectors, a jump-compensated U-shaped generative adversarial network (RU-Gan) based on jump compensation is designed for fusing six surface normal vectors. Among them, jump compensation is proposed in the encoder and decoder parts, and the content loss function is reconstructed, among other approaches. For the problem that the reflective region of the original image will cause the estimated normal vector to deviate from the true normal vector, a specular reflection model is proposed to optimize the dataset, thus reducing the reflective region. Experiments show that the estimated normal vector obtained in this paper improves the accuracy by about 20° compared with the previous conventional work, and improves the accuracy by about 1.5° compared with the recent neural network model, which means the neural network model proposed in this paper is more suitable for the normal vector estimation task. Furthermore, the object surface reconstruction framework proposed in this paper has the characteristics of simple implementation conditions and high accuracy of reconstructed texture.
Language	English
Publishing date	2023-03-31
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2052857-7
ISSN	1424-8220 ; 1424-8220
ISSN (online)	1424-8220
ISSN	1424-8220
DOI	10.3390/s23073638
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

Article: Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors.

Wang, Haiping / You, Haifan / Yang, Jiangui / Yang, Minqiang / Wang, Lu / Zhao, Hong / Xie, Zili / Chen, Dunjun

Micromachines

2022 Volume 13, Issue 12

Abstract: This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN ... current due to the incomplete depletion of the GaN channel layer. The depletion conditions with various Al ...

Abstract	This work investigates the impacts of structural parameters on the performances of p-GaN/AlGaN/GaN HEMT-based ultraviolet (UV) phototransistors (PTs) using Silvaco Atlas. The simulation results show that a larger Al content or greater thickness for the AlGaN barrier layer can induce a higher two-dimensional electron gas (2DEG) density and produce a larger photocurrent. However, they may also lead to a larger dark current due to the incomplete depletion of the GaN channel layer. The depletion conditions with various Al contents and thicknesses of the AlGaN layer are investigated in detail, and a borderline between full depletion and incomplete depletion was drawn. An optimized structure with an Al content of 0.23 and a thickness of 14 nm is achieved for UV-PT, which exhibits a high photocurrent density of 92.11 mA/mm, a low dark current density of 7.68 × 10
Language	English
Publishing date	2022-12-13
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2620864-7
ISSN	2072-666X
ISSN	2072-666X
DOI	10.3390/mi13122210
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

Article: Application of generative adversarial networks (GAN) for ophthalmology image domains: a survey.

You, Aram / Kim, Jin Kuk / Ryu, Ik Hee / Yoo, Tae Keun

Eye and vision (London, England)

2022 Volume 9, Issue 1, Page(s) 6

Abstract: ... in ophthalmology. A generative adversarial network (GAN), which consists of two competing types of deep ... synthesis and image-to-image translation. The adoption of GAN for medical imaging is increasing for image ... we present a literature review on the application of GAN in ophthalmology image domains to discuss important ...

Abstract	Background: Recent advances in deep learning techniques have led to improved diagnostic abilities in ophthalmology. A generative adversarial network (GAN), which consists of two competing types of deep neural networks, including a generator and a discriminator, has demonstrated remarkable performance in image synthesis and image-to-image translation. The adoption of GAN for medical imaging is increasing for image generation and translation, but it is not familiar to researchers in the field of ophthalmology. In this work, we present a literature review on the application of GAN in ophthalmology image domains to discuss important contributions and to identify potential future research directions. Methods: We performed a survey on studies using GAN published before June 2021 only, and we introduced various applications of GAN in ophthalmology image domains. The search identified 48 peer-reviewed papers in the final review. The type of GAN used in the analysis, task, imaging domain, and the outcome were collected to verify the usefulness of the GAN. Results: In ophthalmology image domains, GAN can perform segmentation, data augmentation, denoising, domain transfer, super-resolution, post-intervention prediction, and feature extraction. GAN techniques have established an extension of datasets and modalities in ophthalmology. GAN has several limitations, such as mode collapse, spatial deformities, unintended changes, and the generation of high-frequency noises and artifacts of checkerboard patterns. Conclusions: The use of GAN has benefited the various tasks in ophthalmology image domains. Based on our observations, the adoption of GAN in ophthalmology is still in a very early stage of clinical validation compared with deep learning classification techniques because several problems need to be overcome for practical use. However, the proper selection of the GAN technique and statistical modeling of ocular imaging will greatly improve the performance of each image analysis. Finally, this survey would enable researchers to access the appropriate GAN technique to maximize the potential of ophthalmology datasets for deep learning research.
Language	English
Publishing date	2022-02-02
Publishing country	England
Document type	Journal Article ; Review
ZDB-ID	2806610-8
ISSN	2326-0254
ISSN	2326-0254
DOI	10.1186/s40662-022-00277-3
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

Article: A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.

Weng, You-Chen / Lin, Yueh-Chin / Hsu, Heng-Tung / Kao, Min-Lu / Huang, Hsuan-Yao / Ueda, Daisuke / Ha, Minh-Thien-Huu / Yang, Chih-Yi / Maa, Jer-Shen / Chang, Edward-Yi / Dee, Chang-Fu

Materials (Basel, Switzerland)

2022 Volume 15, Issue 3

Abstract: An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN ... with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has ... can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency ...

Abstract	An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a P
Language	English
Publishing date	2022-01-18
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2487261-1
ISSN	1996-1944
ISSN	1996-1944
DOI	10.3390/ma15030703
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

Article: Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs.

Langpoklakpam, Catherine / Liu, An-Chen / You, Neng-Jie / Kao, Ming-Hsuan / Huang, Wen-Hsien / Shen, Chang-Hong / Tzou, Jerry / Kuo, Hao-Chung / Shieh, Jia-Min

Micromachines

2023 Volume 14, Issue 3

Abstract: In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT ... structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN ...

Abstract	In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact resistance of about 0.6 Ω-mm after annealing at 550 °C. In addition, the threshold voltage shifting of the device was reduced from -0.85 V to -0.74 V after applying a high gate bias stress at 150 °C for 10
Language	English
Publishing date	2023-02-28
Publishing country	Switzerland
Document type	Journal Article
ZDB-ID	2620864-7
ISSN	2072-666X
ISSN	2072-666X
DOI	10.3390/mi14030576
Database	MEDical Literature Analysis and Retrieval System OnLINE

Order via subito

Book ; Online: Discriminator-Cooperated Feature Map Distillation for GAN Compression

Hu, Tie / Lin, Mingbao / You, Lizhou / Chao, Fei / Ji, Rongrong

2022

Abstract: ... to mitigate mode collapse in GAN compression, we construct a collaborative adversarial training paradigm ... with our DCD. Our DCD shows superior results compared with existing GAN compression methods. For instance ... Despite excellent performance in image generation, Generative Adversarial Networks (GANs) are ...

Abstract	Despite excellent performance in image generation, Generative Adversarial Networks (GANs) are notorious for its requirements of enormous storage and intensive computation. As an awesome ''performance maker'', knowledge distillation is demonstrated to be particularly efficacious in exploring low-priced GANs. In this paper, we investigate the irreplaceability of teacher discriminator and present an inventive discriminator-cooperated distillation, abbreviated as DCD, towards refining better feature maps from the generator. In contrast to conventional pixel-to-pixel match methods in feature map distillation, our DCD utilizes teacher discriminator as a transformation to drive intermediate results of the student generator to be perceptually close to corresponding outputs of the teacher generator. Furthermore, in order to mitigate mode collapse in GAN compression, we construct a collaborative adversarial training paradigm where the teacher discriminator is from scratch established to co-train with student generator in company with our DCD. Our DCD shows superior results compared with existing GAN compression methods. For instance, after reducing over 40x MACs and 80x parameters of CycleGAN, we well decrease FID metric from 61.53 to 48.24 while the current SoTA method merely has 51.92. This work's source code has been made accessible at https://github.com/poopit/DCD-official.
Keywords	Computer Science - Computer Vision and Pattern Recognition
Subject code	004
Publishing date	2022-12-28
Publishing country	us
Document type	Book ; Online
Database	BASE - Bielefeld Academic Search Engine (life sciences selection)

Full text online

Full text

Inter-library loan at ZB MED

Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

To top

More links

Kategorien

Order via subito

More links

Kategorien

In stock of ZB MED Bonn / Germany

Order via subito

Inter-library loan at ZB MED

Full text online

More links

Kategorien

Inter-library loan at ZB MED

More links

Kategorien

Order via subito

More links

Kategorien

Order via subito

More links

Kategorien

Order via subito

More links

Kategorien

Order via subito

More links

Kategorien

Order via subito

More links

Kategorien

Order via subito

Full text online

More links

Kategorien

Inter-library loan at ZB MED