Article ; Online: Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure.
2024 Volume 14, Issue 1, Page(s) 6446
Abstract: In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- ...
Abstract | In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the polarity of the gate bias voltage and exhibit steep switching characteristics with an extremely low subthreshold swing of 1.08 mV dec |
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Language | English |
Publishing date | 2024-03-18 |
Publishing country | England |
Document type | Journal Article |
ZDB-ID | 2615211-3 |
ISSN | 2045-2322 ; 2045-2322 |
ISSN (online) | 2045-2322 |
ISSN | 2045-2322 |
DOI | 10.1038/s41598-024-57290-w |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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