Article ; Online: Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)
2000 Volume 85, Issue 17, Page(s) 3672–3675
Abstract: The two-dimensional (2D) to three-dimensional (3D) morphological transition in strained Ge layers ... which had previously been assumed to be the initial 3D islands. The "prepyramid" Ge islands have rounded ... bases with steps oriented along <110> and exist only over a narrow range of Ge coverages, 3.5-3.9 ...
Abstract | The two-dimensional (2D) to three-dimensional (3D) morphological transition in strained Ge layers grown on Si(001) is investigated using scanning tunneling microscopy. The initial step takes place via the formation of 2D islands which evolve into small ( approximately 180 A) 3D islands with a height to base diameter ratio of approximately 0.04, much smaller than the 0.1 aspect ratio of 105-faceted pyramids which had previously been assumed to be the initial 3D islands. The "prepyramid" Ge islands have rounded bases with steps oriented along <110> and exist only over a narrow range of Ge coverages, 3.5-3.9 monolayers. |
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Language | English |
Publishing date | 2000-10-23 |
Publishing country | United States |
Document type | Journal Article |
ZDB-ID | 208853-8 |
ISSN | 1079-7114 ; 0031-9007 |
ISSN (online) | 1079-7114 |
ISSN | 0031-9007 |
DOI | 10.1103/PhysRevLett.85.3672 |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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