Article ; Online: Electric-field-controlled interface dipole modulation for Si-based memory devices.
2018 Volume 8, Issue 1, Page(s) 8486
Abstract: Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material ... ...
Abstract | Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO |
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Language | English |
Publishing date | 2018-05-31 |
Publishing country | England |
Document type | Journal Article |
ZDB-ID | 2615211-3 |
ISSN | 2045-2322 ; 2045-2322 |
ISSN (online) | 2045-2322 |
ISSN | 2045-2322 |
DOI | 10.1038/s41598-018-26692-y |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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