Article ; Online: Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.
Small (Weinheim an der Bergstrasse, Germany)
2024 , Page(s) e2310782
Abstract: Freestanding oxide membranes provide a promising path for integrating devices on silicon and flexible platforms. To ensure optimal device performance, these membranes must be of high crystal quality, stoichiometric, and their morphology free from cracks ... ...
Abstract | Freestanding oxide membranes provide a promising path for integrating devices on silicon and flexible platforms. To ensure optimal device performance, these membranes must be of high crystal quality, stoichiometric, and their morphology free from cracks and wrinkles. Often, layers transferred on substrates show wrinkles and cracks due to a lattice relaxation from an epitaxial mismatch. Doping the sacrificial layer of Sr |
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Language | English |
Publishing date | 2024-03-03 |
Publishing country | Germany |
Document type | Journal Article |
ZDB-ID | 2168935-0 |
ISSN | 1613-6829 ; 1613-6810 |
ISSN (online) | 1613-6829 |
ISSN | 1613-6810 |
DOI | 10.1002/smll.202310782 |
Database | MEDical Literature Analysis and Retrieval System OnLINE |
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