Book ; Online: Nanowire Field-Effect Transistor (FET)
2021
Keywords | History of engineering & technology ; random dopant ; drift-diffusion ; variability ; device simulation ; nanodevice ; screening ; Coulomb interaction ; III-V ; TASE ; MOSFETs ; Integration ; nanowire field-effect transistors ; silicon nanomaterials ; charge transport ; one-dimensional multi-subband scattering models ; Kubo-Greenwood formalism ; schrödinger-poisson solvers ; DC and AC characteristic fluctuations ; gate-all-around ; nanowire ; work function fluctuation ; aspect ratio of channel cross-section ; timing fluctuation ; noise margin fluctuation ; power fluctuation ; CMOS circuit ; statistical device simulation ; variability effects ; Monte Carlo ; Schrödinger based quantum corrections ; quantum modeling ; nonequilibrium Green's function ; nanowire transistor ; electron-phonon interaction ; phonon-phonon interaction ; self-consistent Born approximation ; lowest order approximation ; Padé approximants ; Richardson extrapolation ; ZnO ; field effect transistor ; conduction mechanism ; metal gate ; material properties ; fabrication ; modelling ; nanojunction ; constriction ; quantum electron transport ; quantum confinement ; dimensionality reduction ; stochastic Schrödinger equations ; geometric correlations ; silicon nanowires ; nano-transistors ; quantum transport ; hot electrons ; self-cooling ; nano-cooling ; thermoelectricity ; heat equation ; non-equilibrium Green functions ; power dissipation |
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Size | 1 electronic resource (96 pages) |
Publisher | MDPI - Multidisciplinary Digital Publishing Institute |
Publishing place | Basel, Switzerland |
Document type | Book ; Online |
Note | English ; Open Access |
HBZ-ID | HT021043969 |
ISBN | 9783039362097 ; 3039362097 |
Database | ZB MED Catalogue: Medicine, Health, Nutrition, Environment, Agriculture |
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