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  1. Article ; Online: Correction: Mechanism and principle of doping: realizing of silver incorporation in CdS thin film

    Najm, A S / Aljuhani, Abdulwahab / Naeem, Hasanain Salah / Sopian, K / Ismail, Raid A / Holi, Araa Mebdir / Sabri, Laith S / Abdullah Al-Zahrani, Asla / Rasheed, Rashed Taleb / Moria, Hazim

    RSC advances

    2022  Volume 12, Issue 50, Page(s) 32327

    Abstract: This corrects the article DOI: 10.1039/D2RA04790J.]. ...

    Abstract [This corrects the article DOI: 10.1039/D2RA04790J.].
    Language English
    Publishing date 2022-11-11
    Publishing country England
    Document type Published Erratum
    ISSN 2046-2069
    ISSN (online) 2046-2069
    DOI 10.1039/d2ra90111k
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Mechanism and principle of doping: realizing of silver incorporation in CdS thin film

    Najm, A S / Aljuhani, Abdulwahab / Naeem, Hasanain Salah / Sopian, K / Ismail, Raid A / Holi, Araa Mebdir / Sabri, Laith S / Abdullah Al-Zahrani, Asla / Rasheed, Rashed Taleb / Moria, Hazim

    RSC advances

    2022  Volume 12, Issue 46, Page(s) 29613–29626

    Abstract: A high-quality buffer layer serves as one of the most significant issues that influences the efficiency of solar cells. Doping in semiconductors is an important strategy that can be used to control the reaction growth. In this study, the influence of Ag ... ...

    Abstract A high-quality buffer layer serves as one of the most significant issues that influences the efficiency of solar cells. Doping in semiconductors is an important strategy that can be used to control the reaction growth. In this study, the influence of Ag doping on the morphological, optical and electrical properties of CdS thin films have been obtained. Herein, we propose the mechanism of CdS film formation with and without Ag ions, and we found that changes in the reaction of preparing CdS by the chemical bath deposition (CBD) method cause a shift in the geometric composition of the CdS film. XRD showed that the position of peaks in the doped films are displaced to wider angles, indicating a drop in the crystal lattice constant. The optical analysis confirmed direct transition with an optical energy gap between 2.10 and 2.43 eV. The morphological studies show conglomerates with inhomogeneously distributed spherical grains with an increase of the Ag ratio. The electrical data revealed that the annealed Ag-doped CdS with 5% Ag has the highest carrier concentration (3.28 × 10
    Language English
    Publishing date 2022-10-17
    Publishing country England
    Document type Journal Article
    ISSN 2046-2069
    ISSN (online) 2046-2069
    DOI 10.1039/d2ra04790j
    Database MEDical Literature Analysis and Retrieval System OnLINE

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