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  1. Article ; Online: High Spatial Resolution Thermal Mapping of Volatile Switching in NbO

    Nandi, Sanjoy Kumar / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Das, Sujan Kumar / Ratcliff, Thomas / Elliman, Robert G

    ACS applied materials & interfaces

    2022  Volume 14, Issue 25, Page(s) 29025–29031

    Abstract: Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based ... ...

    Abstract Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (∼100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbO
    Language English
    Publishing date 2022-06-14
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c06870
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article: High Spatial Resolution Thermal Mapping of Volatile Switching in NbOₓ-Based Memristor Using In Situ Scanning Thermal Microscopy

    Nandi, Sanjoy Kumar / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Das, Sujan Kumar / Ratcliff, Thomas / Elliman, Robert G.

    ACS applied materials & interfaces. 2022 June 14, v. 14, no. 25

    2022  

    Abstract: Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based ... ...

    Abstract Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (∼100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbOₓ-based cross-bar and nanovia devices with Pt top electrodes. The measurements on cross-bar devices reproduce the current redistribution and confinement processes previously observed by TRTI but without the need to coat the electrodes with a material of high thermo-reflectance coefficient (e.g., Au), while those on the nanovia devices highlight the spatial resolution of the technique. The measured temperature distributions are compared with those obtained from physics-based finite-element simulations and suggest that thermal boundary resistance plays an important role in heat transfer between the active device volume and the top electrode.
    Keywords electrodes ; heat transfer ; infrared spectroscopy ; temperature
    Language English
    Dates of publication 2022-0614
    Size p. 29025-29031.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c06870
    Database NAL-Catalogue (AGRICOLA)

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  3. Article ; Online: A new technique based on current measurement for nanoscale ferroelectricity assessment: Nano-positive up negative down.

    Martin, Simon / Baboux, Nicolas / Albertini, David / Gautier, Brice

    The Review of scientific instruments

    2017  Volume 88, Issue 2, Page(s) 23901

    Abstract: In this paper, we propose a new procedure which aims at measuring the polarisation switching current at the nanoscale on ferroelectric thin films with the atomic force microscope tip used as a top electrode. Our technique is an adaptation of the so- ... ...

    Abstract In this paper, we propose a new procedure which aims at measuring the polarisation switching current at the nanoscale on ferroelectric thin films with the atomic force microscope tip used as a top electrode. Our technique is an adaptation of the so-called positive up negative down method commonly operated on large electrodes. The main obstacle that must be overcome to implement such measurement is the enhancement of the signal to noise ratio, in a context where the stray capacitance of the sample/tip/lever/lever holder system generates a dielectric displacement current several orders of magnitude higher than the current to be measured. This problem is solved by the subtraction of the displacement current through a reference capacitance. For the first time, we show an example of nanoscale positive up negative down measurement of the polarisation charge on a PbZrTiO
    Language English
    Publishing date 2017-02
    Publishing country United States
    Document type Journal Article
    ZDB-ID 209865-9
    ISSN 1089-7623 ; 0034-6748
    ISSN (online) 1089-7623
    ISSN 0034-6748
    DOI 10.1063/1.4974953
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    In stock of ZB MED Bonn / Germany

    Z 4' 46/112: Show issues

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  4. Article ; Online: Interpretation of multiscale characterization techniques to assess ferroelectricity: The case of GaFeO

    Martin, Simon / Baboux, Nicolas / Albertini, David / Gautier, Brice

    Ultramicroscopy

    2017  Volume 172, Page(s) 47–51

    Abstract: In this paper, we propose a thorough experimental procedure to assess the ferroelectricity of thin films, and apply this procedure to Pulsed Laser Deposition grown ... ...

    Abstract In this paper, we propose a thorough experimental procedure to assess the ferroelectricity of thin films, and apply this procedure to Pulsed Laser Deposition grown GaFeO
    Language English
    Publishing date 2017
    Publishing country Netherlands
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ZDB-ID 1479043-9
    ISSN 1879-2723 ; 0304-3991
    ISSN (online) 1879-2723
    ISSN 0304-3991
    DOI 10.1016/j.ultramic.2016.10.012
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Physical Origin of Negative Differential Resistance in V

    Das, Sujan Kumar / Nandi, Sanjoy Kumar / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Lu, Teng / Liu, Yun / Haeger, Tobias / Heiderhoff, Ralf / Riedl, Thomas / Ratcliff, Thomas / Elliman, Robert Glen

    Advanced materials (Deerfield Beach, Fla.)

    2022  Volume 35, Issue 8, Page(s) e2208477

    Abstract: Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the ... ...

    Abstract Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V
    Language English
    Publishing date 2022-12-30
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202208477
    Database MEDical Literature Analysis and Retrieval System OnLINE

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