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  1. Article ; Online: Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation.

    Murzakhanov, Fadis F / Sadovnikova, Margarita A / Gracheva, Irina N / Mamin, Georgy V / Baibekov, Eduard I / Mokhov, Evgeniy N

    Nanotechnology

    2024  Volume 35, Issue 15

    Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique ...

    Abstract Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping with
    Language English
    Publishing date 2024-01-25
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ad1940
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Book ; Online: Exploring the Properties of the V_B^- Defect in hBN

    Gracheva, Irina N. / Sadovnikova, Margarita A. / Murzakhanov, Fadis F. / Mamin, Georgy V. / Baibekov, Eduard I. / Mokhov, Evgeniy N.

    Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

    2023  

    Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with ... ...

    Abstract Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B^ - spin polarization under optical pumping with {\lambda}ext = 532 nm laser using high-frequency ({\nu}mw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P = 38.4 %. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 microseconds, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding spin properties of boron vacancy.
    Keywords Condensed Matter - Materials Science
    Subject code 530 ; 535
    Publishing date 2023-05-13
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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