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  1. Article ; Online: Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon.

    Berdnikov, Yury / Ilkiv, Igor / Sibirev, Nickolay / Ubyivovk, Evgeniy / Bouravleuv, Alexei

    Nanotechnology

    2020  Volume 31, Issue 37, Page(s) 374005

    Abstract: We present a comparative study of GaAs nanowire growth on Si(111) substrates by molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our approach allows the synthesis of nanowires with different catalyst materials in separate ... ...

    Abstract We present a comparative study of GaAs nanowire growth on Si(111) substrates by molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our approach allows the synthesis of nanowires with different catalyst materials in separate sectors of the same substrate within the same epitaxial process. We match the experimental results to the modeling of chemical potentials and nanowire length distributions to analyze the impact of silicon incorporation into the catalyst droplets on the growth rates and size homogeneity in ensembles of Au- and Ag-catalyzed GaAs nanowires.
    Language English
    Publishing date 2020-05-27
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ab96e1
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Mapping of Fabry-Perot and whispering gallery modes in GaN microwires by nonlinear imaging.

    Berdnikov, Yury / Shtrom, Igor / Rozhavskaya, Maria / Lundin, Wsevolod / Hendricks, Nicholas / Grange, Rachel / Timofeeva, Maria

    Nanotechnology

    2021  Volume 32, Issue 40

    Abstract: Engineering nonlinear optical responses at the microscale is a key topic in photonics for achieving efficient frequency conversion and light manipulation. Gallium nitride (GaN) is a promising semiconductor material for integrated nonlinear photonic ... ...

    Abstract Engineering nonlinear optical responses at the microscale is a key topic in photonics for achieving efficient frequency conversion and light manipulation. Gallium nitride (GaN) is a promising semiconductor material for integrated nonlinear photonic structures. In this work, we use epitaxially grown GaN microwires as nonlinear optical whispering gallery and Fabry-Perot resonators. We demonstrate an effective generation of second-harmonic and polarization-dependent signals of whispering gallery and Fabry-Perot modes (FPM) under near-infrared (NIR) excitation. We show how the rotation of the excitation polarization can be used to control and switch between Fabry-Perot and whispering gallery modes in tapered GaN microwire resonators. We demonstrate the enhancement of two-photon luminescence in the yellow-green spectral range due to efficient coupling between whispering gallery, FPM, and excitonic states in GaN. This luminescence enhancement allows us to conveniently visualize whispering gallery modes excited with a NIR source. Such microwire resonators can be used as compact microlasers or sensing elements in photonic sensors.
    Language English
    Publishing date 2021-07-16
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ac1017
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Tuning the Optical Properties and Conductivity of Bundles in Networks of Single-Walled Carbon Nanotubes.

    Mitin, Dmitry / Vorobyev, Alexandr / Pavlov, Alexander / Berdnikov, Yury / Mozharov, Alexey / Mikhailovskii, Vladimir / Ramirez B, Javier A / Krasnikov, Dmitry V / Kopylova, Daria S / Kirilenko, Demid A / Vinnichenko, Maxim / Polozkov, Roman / Nasibulin, Albert G / Mukhin, Ivan

    The journal of physical chemistry letters

    2022  Volume 13, Issue 37, Page(s) 8775–8782

    Abstract: The films of single-walled carbon nanotubes (SWCNTs) are a promising material for flexible transparent electrodes, which performance depends not only on the properties of individual nanotubes but also, foremost, on bundling of individual nanotubes. This ... ...

    Abstract The films of single-walled carbon nanotubes (SWCNTs) are a promising material for flexible transparent electrodes, which performance depends not only on the properties of individual nanotubes but also, foremost, on bundling of individual nanotubes. This work investigates the impact of densification on optical and electronic properties of SWCNT bundles and fabricated films. Our ab initio analysis shows that the optimally densified bundles, consisting of a mixture of quasi-metallic and semiconducting SWCNTs, demonstrate quasi-metallic behavior and can be considered as an effective conducting medium. Our density functional theory calculations indicate the band curving and bandgap narrowing with the reduction of the distance between nanotubes inside bundles. Simulation results are consistent with the observed conductivity improvement and shift of the absorption peaks in SWCNT films densified in isopropyl alcohol. Therefore, not only individual nanotubes but also the bundles should be considered as building blocks for high-performance transparent conductive SWCNT-based films.
    Language English
    Publishing date 2022-09-14
    Publishing country United States
    Document type Journal Article
    ISSN 1948-7185
    ISSN (online) 1948-7185
    DOI 10.1021/acs.jpclett.2c01931
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions.

    Tauchnitz, Tina / Berdnikov, Yury / Dubrovskii, Vladimir G / Schneider, Harald / Helm, Manfred / Dimakis, Emmanouil

    Nanotechnology

    2018  Volume 29, Issue 50, Page(s) 504004

    Abstract: We demonstrate a simple route to grow ensembles of self-catalyzed GaAs nanowires with a remarkably narrow statistical distribution of lengths on natively oxidized Si(111) substrates. The fitting of the nanowire length distribution (LD) with a theoretical ...

    Abstract We demonstrate a simple route to grow ensembles of self-catalyzed GaAs nanowires with a remarkably narrow statistical distribution of lengths on natively oxidized Si(111) substrates. The fitting of the nanowire length distribution (LD) with a theoretical model reveals that the key requirements for narrow LDs are the synchronized nucleation of all nanowires on the substrate and the absence of beam shadowing from adjacent nanowires. Both requirements are fulfilled by controlling the size and number density of the openings in SiO
    Language English
    Publishing date 2018-09-21
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aae361
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Length distributions of Au-catalyzed and In-catalyzed InAs nanowires.

    Dubrovskii, V G / Sibirev, N V / Berdnikov, Y / Gomes, U P / Ercolani, D / Zannier, V / Sorba, L

    Nanotechnology

    2016  Volume 27, Issue 37, Page(s) 375602

    Abstract: We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions ...

    Abstract We present experimental data on the length distributions of InAs nanowires grown by chemical beam epitaxy with Au catalyst nanoparticles obtained by thermal dewetting of Au film, Au colloidal nanoparticles and In droplets. Poissonian length distributions are observed in the first case. Au colloidal nanoparticles produce broader and asymmetric length distributions of InAs nanowires. However, the distributions can be strongly narrowed by removing the high temperature annealing step. The length distributions for the In-catalyzed growth are instead very broad. We develop a generic model that is capable of describing the observed behaviors by accounting for both the incubation time for nanowire growth and secondary nucleation of In droplets. These results allow us to formulate some general recipes for obtaining more uniform length distributions of III-V nanowires.
    Language English
    Publishing date 2016-09-16
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/0957-4484/27/37/375602
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article ; Online: Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board.

    Zubov, Fedor / Maximov, Mikhail / Moiseev, Eduard / Vorobyev, Alexandr / Mozharov, Alexey / Berdnikov, Yuri / Kaluzhnyy, Nikolay / Mintairov, Sergey / Kulagina, Marina / Kryzhanovskaya, Natalia / Zhukov, Alexey

    Optics letters

    2021  Volume 46, Issue 16, Page(s) 3853–3856

    Abstract: We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former's bonding results in a ... ...

    Abstract We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former's bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4-3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.
    Language English
    Publishing date 2021-07-28
    Publishing country United States
    Document type Journal Article
    ISSN 1539-4794
    ISSN (online) 1539-4794
    DOI 10.1364/OL.432920
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article: Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates.

    Fedorov, Vladimir V / Berdnikov, Yury / Sibirev, Nickolay V / Bolshakov, Alexey D / Fedina, Sergey V / Sapunov, Georgiy A / Dvoretckaia, Liliia N / Cirlin, George / Kirilenko, Demid A / Tchernycheva, Maria / Mukhin, Ivan S

    Nanomaterials (Basel, Switzerland)

    2021  Volume 11, Issue 8

    Abstract: Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed ... ...

    Abstract Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
    Language English
    Publishing date 2021-07-28
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano11081949
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  8. Article ; Online: CdTe Nanowires by Au-Catalyzed Metalorganic Vapor Phase Epitaxy.

    Di Carlo, Virginia / Prete, Paola / Dubrovskii, Vladimir G / Berdnikov, Yury / Lovergine, Nico

    Nano letters

    2017  Volume 17, Issue 7, Page(s) 4075–4082

    Abstract: We report on the first Au-catalyzed growth of CdTe nanowires by metalorganic vapor phase epitaxy. The nanowires were obtained by a separate precursors flow process in which (i) di-isopropyl-telluride ( ...

    Abstract We report on the first Au-catalyzed growth of CdTe nanowires by metalorganic vapor phase epitaxy. The nanowires were obtained by a separate precursors flow process in which (i) di-isopropyl-telluride (
    Language English
    Publishing date 2017-06-16
    Publishing country United States
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.7b00719
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  9. Article ; Online: Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth.

    Viazmitinov, Dmitrii V / Berdnikov, Yury / Kadkhodazadeh, Shima / Dragunova, Anna / Sibirev, Nickolay / Kryzhanovskaya, Natalia / Radko, Ilya / Huck, Alexander / Yvind, Kresten / Semenova, Elizaveta

    Nanoscale

    2020  Volume 12, Issue 46, Page(s) 23780–23788

    Abstract: We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated ... ...

    Abstract We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our X-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V materials into Si platforms and opens up new opportunities in active Si photonics.
    Language English
    Publishing date 2020-11-24
    Publishing country England
    Document type Journal Article
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/d0nr05779g
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Optimization of Optoelectronic Properties of Patterned Single-Walled Carbon Nanotube Films.

    Mitin, Dmitry / Berdnikov, Yury / Vorobyev, Alexandr / Mozharov, Alexey / Raudik, Sergei / Koval, Olga / Neplokh, Vladimir / Moiseev, Eduard / Ilatovskii, Daniil / Nasibulin, Albert G / Mukhin, Ivan

    ACS applied materials & interfaces

    2020  Volume 12, Issue 49, Page(s) 55141–55147

    Abstract: We propose a novel strategy to enhance optoelectrical properties of single-walled carbon nanotube (SWCNT) films for transparent electrode applications by film patterning. First, we theoretically considered the effect of the conducting pattern geometry on ...

    Abstract We propose a novel strategy to enhance optoelectrical properties of single-walled carbon nanotube (SWCNT) films for transparent electrode applications by film patterning. First, we theoretically considered the effect of the conducting pattern geometry on the film quality factor and then experimentally examined the calculated structures. We extend these results to show that the best characteristics of patterned SWCNT films can be achieved using the combination of initial film properties: low transmittance and high conductivity. The proposed strategy allows the patterned layers of SWCNTs to outperform the widely used indium-tin-oxide electrodes on both flexible and rigid substrates.
    Language English
    Publishing date 2020-11-29
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c14783
    Database MEDical Literature Analysis and Retrieval System OnLINE

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