Book ; Online: High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature
2019
Abstract: We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and ... ...
Abstract | We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis, and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in the previous study (DOI:10.1063/1.5049691) by a factor of 10, and now encompasses the region in which some recent silicon dark matter detectors operate (DOI:10.1103/PhysRevLett.121.051301). We also report on a phenomenon of surface charge trapping which can reduce expected charge collection. |
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Keywords | Condensed Matter - Materials Science |
Publishing date | 2019-10-04 |
Publishing country | us |
Document type | Book ; Online |
Database | BASE - Bielefeld Academic Search Engine (life sciences selection) |
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