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  1. Article ; Online: Atomistic deformation mechanism of silicon under laser-driven shock compression.

    Pandolfi, Silvia / Brown, S Brennan / Stubley, P G / Higginbotham, Andrew / Bolme, C A / Lee, H J / Nagler, B / Galtier, E / Sandberg, R L / Yang, W / Mao, W L / Wark, J S / Gleason, A E

    Nature communications

    2022  Volume 13, Issue 1, Page(s) 5535

    Abstract: Silicon (Si) is one of the most abundant elements on Earth, and it is the most widely used semiconductor. Despite extensive study, some properties of Si, such as its behaviour under dynamic compression, remain elusive. A detailed understanding of Si ... ...

    Abstract Silicon (Si) is one of the most abundant elements on Earth, and it is the most widely used semiconductor. Despite extensive study, some properties of Si, such as its behaviour under dynamic compression, remain elusive. A detailed understanding of Si deformation is crucial for various fields, ranging from planetary science to materials design. Simulations suggest that in Si the shear stress generated during shock compression is released via a high-pressure phase transition, challenging the classical picture of relaxation via defect-mediated plasticity. However, direct evidence supporting either deformation mechanism remains elusive. Here, we use sub-picosecond, highly-monochromatic x-ray diffraction to study (100)-oriented single-crystal Si under laser-driven shock compression. We provide the first unambiguous, time-resolved picture of Si deformation at ultra-high strain rates, demonstrating the predicted shear release via phase transition. Our results resolve the longstanding controversy on silicon deformation and provide direct proof of strain rate-dependent deformation mechanisms in a non-metallic system.
    Language English
    Publishing date 2022-09-21
    Publishing country England
    Document type Journal Article
    ZDB-ID 2553671-0
    ISSN 2041-1723 ; 2041-1723
    ISSN (online) 2041-1723
    ISSN 2041-1723
    DOI 10.1038/s41467-022-33220-0
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Book ; Online: Ultra-fast visualization of deformation mechanism for dynamically-compressed silicon

    Pandolfi, S. / Brown, S. Brennan / Stubley, P. G. / Higginbotham, A. / Bolme, C. A. / Lee, H. J. / Nagler, B. / Galtier, E. / Sandberg, R. / Yang, W. / Mao, W. L. / Wark, J. S. / Gleason, A.

    2021  

    Abstract: Sub-picosecond x-ray diffraction was used to measure (100)-oriented silicon under laser-driven shock compression, providing an unambiguous atomistic picture of silicon phase transitions. We determine the orientation relationship between the Si-V and Si-I ...

    Abstract Sub-picosecond x-ray diffraction was used to measure (100)-oriented silicon under laser-driven shock compression, providing an unambiguous atomistic picture of silicon phase transitions. We determine the orientation relationship between the Si-V and Si-I phases, and connect it with the specific deformation mechanism. We provide the first direct evidence of the inelastic deformation of Si under laser-driven shock compression, i.e., the shear stress is relieved by the phase transition without the occurrence of defect-mediated plasticity. We also demonstrate metastability of the high-pressure Si-II phase down to ambient pressure, which could lead to the synthesis of novel functional materials.
    Keywords Condensed Matter - Materials Science
    Publishing date 2021-06-10
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  3. Article ; Online: Direct imaging of ultrafast lattice dynamics.

    Brown, S Brennan / Gleason, A E / Galtier, E / Higginbotham, A / Arnold, B / Fry, A / Granados, E / Hashim, A / Schroer, C G / Schropp, A / Seiboth, F / Tavella, F / Xing, Z / Mao, W / Lee, H J / Nagler, B

    Science advances

    2019  Volume 5, Issue 3, Page(s) eaau8044

    Abstract: Under rapid high-temperature, high-pressure loading, lattices exhibit complex elastic-inelastic responses. The dynamics of these responses are challenging to measure experimentally because of high sample density and extremely small relevant spatial and ... ...

    Abstract Under rapid high-temperature, high-pressure loading, lattices exhibit complex elastic-inelastic responses. The dynamics of these responses are challenging to measure experimentally because of high sample density and extremely small relevant spatial and temporal scales. Here, we use an x-ray free-electron laser providing simultaneous in situ direct imaging and x-ray diffraction to spatially resolve lattice dynamics of silicon under high-strain rate conditions. We present the first imaging of a new intermediate elastic feature modulating compression along the axis of applied stress, and we identify the structure, compression, and density behind each observed wave. The ultrafast probe x-rays enabled time-resolved characterization of the intermediate elastic feature, which is leveraged to constrain kinetic inhibition of the phase transformation between 2 and 4 ns. These results not only address long-standing questions about the response of silicon under extreme environments but also demonstrate the potential for ultrafast direct measurements to illuminate new lattice dynamics.
    Language English
    Publishing date 2019-03-08
    Publishing country United States
    Document type Journal Article
    ZDB-ID 2810933-8
    ISSN 2375-2548 ; 2375-2548
    ISSN (online) 2375-2548
    ISSN 2375-2548
    DOI 10.1126/sciadv.aau8044
    Database MEDical Literature Analysis and Retrieval System OnLINE

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