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  1. Article ; Online: First-principles examination of two-dimensional Janus quintuple-layer atomic structures XCrSiN

    Tran, P T Linh / Hieu, Nguyen V / Bui D, Hoi / Cuong, Q Nguyen / Hieu, Nguyen N

    Nanoscale advances

    2023  Volume 5, Issue 11, Page(s) 3104–3113

    Abstract: In this work, we propose novel two-dimensional Janus ... ...

    Abstract In this work, we propose novel two-dimensional Janus XCrSiN
    Language English
    Publishing date 2023-05-05
    Publishing country England
    Document type Journal Article
    ISSN 2516-0230
    ISSN (online) 2516-0230
    DOI 10.1039/d3na00261f
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Modified tailoring the electronic phase and emergence of midstates in impurity-imbrued armchair graphene nanoribbons

    Nguyen D. Hien / Kavoos Mirabbaszadeh / Masoumeh Davoudiniya / Bui D. Hoi / Le T. T. Phuong / Mohsen Yarmohammadi

    Scientific Reports, Vol 9, Iss 1, Pp 1-

    2019  Volume 12

    Abstract: Abstract We theoretically address the electronic structure of mono- and simple bi-layer armchair graphene nanoribbons (AGNRs) when they are infected by extrinsic charged dilute impurity. This is done with the aid of the modified tight-binding method ... ...

    Abstract Abstract We theoretically address the electronic structure of mono- and simple bi-layer armchair graphene nanoribbons (AGNRs) when they are infected by extrinsic charged dilute impurity. This is done with the aid of the modified tight-binding method considering the edge effects and the Green’s function approach. Also, the interplay of host and guest electrons are studied within the full self-consistent Born approximation. Given that the main basic electronic features can be captured from the electronic density of states (DOS), we focus on the perturbed DOS of lattices corresponding to the different widths. The modified model says that there is no metallic phase due to the edge states. We found that the impurity effects lead to the emergence of midgap states in DOS of both systems so that a semiconductor-to-semimetal phase transition occurs at strong enough impurity concentrations and/or impurity scattering potentials. The intensity of semiconductor-to-semimetal phase transition in monolayer (bilayer) ultra-narrow (realistic) ribbons is sharper than bilayers (monolayers). In both lattices, electron-hole symmetry breaks down as a result of induced-impurity states. The findings of this research would provide a base for future experimental studies and improve the applications of AGNRs in logic semiconductor devices in industry.
    Keywords Medicine ; R ; Science ; Q
    Subject code 530
    Language English
    Publishing date 2019-07-01T00:00:00Z
    Publisher Nature Publishing Group
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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