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  1. Article ; Online: Dark matter axion search using a Josephson Traveling wave parametric amplifier.

    Bartram, C / Braine, T / Cervantes, R / Crisosto, N / Du, N / Leum, G / Mohapatra, P / Nitta, T / Rosenberg, L J / Rybka, G / Yang, J / Clarke, John / Siddiqi, I / Agrawal, A / Dixit, A V / Awida, M H / Chou, A S / Hollister, M / Knirck, S /
    Sonnenschein, A / Wester, W / Gleason, J R / Hipp, A T / Jois, S / Sikivie, P / Sullivan, N S / Tanner, D B / Lentz, E / Khatiwada, R / Carosi, G / Cisneros, C / Robertson, N / Woollett, N / Duffy, L D / Boutan, C / Jones, M / LaRoque, B H / Oblath, N S / Taubman, M S / Daw, E J / Perry, M G / Buckley, J H / Gaikwad, C / Hoffman, J / Murch, K / Goryachev, M / McAllister, B T / Quiskamp, A / Thomson, C / Tobar, M E / Bolkhovsky, V / Calusine, G / Oliver, W / Serniak, K

    The Review of scientific instruments

    2023  Volume 94, Issue 4

    Abstract: We describe the first implementation of a Josephson Traveling Wave Parametric Amplifier (JTWPA) in an axion dark matter search. The operation of the JTWPA for a period of about two weeks achieved sensitivity to axion-like particle dark matter with axion- ... ...

    Abstract We describe the first implementation of a Josephson Traveling Wave Parametric Amplifier (JTWPA) in an axion dark matter search. The operation of the JTWPA for a period of about two weeks achieved sensitivity to axion-like particle dark matter with axion-photon couplings above 10-13 Ge V-1 over a narrow range of axion masses centered around 19.84 µeV by tuning the resonant frequency of the cavity over the frequency range of 4796.7-4799.5 MHz. The JTWPA was operated in the insert of the axion dark matter experiment as part of an independent receiver chain that was attached to a 0.56-l cavity. The ability of the JTWPA to deliver high gain over a wide (3 GHz) bandwidth has engendered interest from those aiming to perform broadband axion searches, a longstanding goal in this field.
    Language English
    Publishing date 2023-12-12
    Publishing country United States
    Document type Journal Article
    ZDB-ID 209865-9
    ISSN 1089-7623 ; 0034-6748
    ISSN (online) 1089-7623
    ISSN 0034-6748
    DOI 10.1063/5.0122907
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Book ; Online: Microwave Package Design for Superconducting Quantum Processors

    Huang, Sihao / Lienhard, Benjamin / Calusine, Greg / Vepsäläinen, Antti / Braumüller, Jochen / Kim, David K. / Melville, Alexander J. / Niedzielski, Bethany M. / Yoder, Jonilyn L. / Kannan, Bharath / Orlando, Terry P. / Gustavsson, Simon / Oliver, William D.

    2020  

    Abstract: Solid-state qubits with transition frequencies in the microwave regime, such as superconducting qubits, are at the forefront of quantum information processing. However, high-fidelity, simultaneous control of superconducting qubits at even a moderate ... ...

    Abstract Solid-state qubits with transition frequencies in the microwave regime, such as superconducting qubits, are at the forefront of quantum information processing. However, high-fidelity, simultaneous control of superconducting qubits at even a moderate scale remains a challenge, partly due to the complexities of packaging these devices. Here, we present an approach to microwave package design focusing on material choices, signal line engineering, and spurious mode suppression. We describe design guidelines validated using simulations and measurements used to develop a 24-port microwave package. Analyzing the qubit environment reveals no spurious modes up to 11GHz. The material and geometric design choices enable the package to support qubits with lifetimes exceeding 350 {\mu}s. The microwave package design guidelines presented here address many issues relevant for near-term quantum processors.

    Comment: 14 pages, 7 figures
    Keywords Quantum Physics
    Subject code 621
    Publishing date 2020-12-02
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  3. Article ; Online: Room temperature coherent control of defect spin qubits in silicon carbide.

    Koehl, William F / Buckley, Bob B / Heremans, F Joseph / Calusine, Greg / Awschalom, David D

    Nature

    2011  Volume 479, Issue 7371, Page(s) 84–87

    Abstract: Electronic spins in semiconductors have been used extensively to explore the limits of external control over quantum mechanical phenomena. A long-standing goal of this research has been to identify or develop robust quantum systems that can be easily ... ...

    Abstract Electronic spins in semiconductors have been used extensively to explore the limits of external control over quantum mechanical phenomena. A long-standing goal of this research has been to identify or develop robust quantum systems that can be easily manipulated, for future use in advanced information and communication technologies. Recently, a point defect in diamond known as the nitrogen-vacancy centre has attracted a great deal of interest because it possesses an atomic-scale electronic spin state that can be used as an individually addressable, solid-state quantum bit (qubit), even at room temperature. These exceptional quantum properties have motivated efforts to identify similar defects in other semiconductors, as they may offer an expanded range of functionality not available to the diamond nitrogen-vacancy centre. Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for exploration, owing to a combination of computational predictions and magnetic resonance data. Here we demonstrate that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin. Using optical and microwave techniques similar to those used with diamond nitrogen-vacancy qubits, we study the spin-1 ground state of each of four inequivalent forms of the neutral carbon-silicon divacancy, as well as a pair of defect spin states of unidentified origin. These defects are optically active near telecommunication wavelengths, and are found in a host material for which there already exist industrial-scale crystal growth and advanced microfabrication techniques. In addition, they possess desirable spin coherence properties that are comparable to those of the diamond nitrogen-vacancy centre. This makes them promising candidates for various photonic, spintronic and quantum information applications that merge quantum degrees of freedom with classical electronic and optical technologies.
    Language English
    Publishing date 2011-11-02
    Publishing country England
    Document type Journal Article ; Research Support, U.S. Gov't, Non-P.H.S.
    ZDB-ID 120714-3
    ISSN 1476-4687 ; 0028-0836
    ISSN (online) 1476-4687
    ISSN 0028-0836
    DOI 10.1038/nature10562
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    In stock of ZB MED Cologne/Königswinter

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  4. Article ; Online: Electrically and mechanically tunable electron spins in silicon carbide color centers.

    Falk, Abram L / Klimov, Paul V / Buckley, Bob B / Ivády, Viktor / Abrikosov, Igor A / Calusine, Greg / Koehl, William F / Gali, Adám / Awschalom, David D

    Physical review letters

    2014  Volume 112, Issue 18, Page(s) 187601

    Abstract: The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, ... ...

    Abstract The electron spins of semiconductor defects can have complex interactions with their host, particularly in polar materials like SiC where electrical and mechanical variables are intertwined. By combining pulsed spin resonance with ab initio simulations, we show that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%. These results establish SiC color centers as compelling systems for sensing nanoscale electric and strain fields.
    Language English
    Publishing date 2014-05-09
    Publishing country United States
    Document type Journal Article
    ZDB-ID 208853-8
    ISSN 1079-7114 ; 0031-9007
    ISSN (online) 1079-7114
    ISSN 0031-9007
    DOI 10.1103/PhysRevLett.112.187601
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    In stock of ZB MED Bonn / Germany

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  5. Article ; Online: Polytype control of spin qubits in silicon carbide.

    Falk, Abram L / Buckley, Bob B / Calusine, Greg / Koehl, William F / Dobrovitski, Viatcheslav V / Politi, Alberto / Zorman, Christian A / Feng, Philip X-L / Awschalom, David D

    Nature communications

    2013  Volume 4, Page(s) 1819

    Abstract: Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an alternative strategy seeks to identify new spin systems with an ...

    Abstract Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials-driven approach that could ultimately lead to 'designer' spins with tailored properties. Here we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including states in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron-electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent states, these interactions provide a route to dipole-coupled networks of separately addressable spins.
    Language English
    Publishing date 2013-04-12
    Publishing country England
    Document type Journal Article ; Research Support, U.S. Gov't, Non-P.H.S.
    ZDB-ID 2553671-0
    ISSN 2041-1723 ; 2041-1723
    ISSN (online) 2041-1723
    ISSN 2041-1723
    DOI 10.1038/ncomms2854
    Database MEDical Literature Analysis and Retrieval System OnLINE

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