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  1. Article ; Online: Controllable Synthesis of Transferable Ultrathin Bi

    Chen, Jiabiao / Liu, Zhaochao / Lv, Zunxian / Hou, Yameng / Chen, Xiang / Lan, Lan / Cheng, Tong-Huai / Zhang, Lei / Duan, Yingnan / Fu, Huixia / Fu, Xuewen / Luo, Feng / Wu, Jinxiong

    Journal of the American Chemical Society

    2024  

    Abstract: Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/ ... ...

    Abstract Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi
    Language English
    Publishing date 2024-04-14
    Publishing country United States
    Document type Journal Article
    ZDB-ID 3155-0
    ISSN 1520-5126 ; 0002-7863
    ISSN (online) 1520-5126
    ISSN 0002-7863
    DOI 10.1021/jacs.4c02496
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: High Mobility and Quantum Oscillations in Semiconducting Bi

    Ai, Wei / Chen, Jiabiao / Dong, Xinyue / Gao, Zhansheng / He, Yuyu / Liu, Zhaochao / Fu, Huixia / Luo, Feng / Wu, Jinxiong

    Nano letters

    2022  Volume 22, Issue 18, Page(s) 7659–7666

    Abstract: ... ...

    Abstract Bi
    MeSH term(s) Bismuth/chemistry ; Cardiovascular Diseases ; Gases/chemistry ; Humans ; Particle Size ; Tellurium/chemistry
    Chemical Substances Gases ; Tellurium (NQA0O090ZJ) ; Bismuth (U015TT5I8H)
    Language English
    Publishing date 2022-09-07
    Publishing country United States
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.2c02891
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Above-Room-Temperature Ferromagnetism in Copper-Doped Two-Dimensional Chromium-Based Nanosheets.

    Gao, Zhansheng / Xin, Baojuan / Chen, Jiabiao / Liu, Zhaochao / Yao, Rui / Ai, Wei / He, Yuyu / Xu, Lingyun / Cheng, Tong-Huai / Wang, Wei-Hua / Luo, Feng

    ACS nano

    2023  Volume 18, Issue 1, Page(s) 703–712

    Abstract: Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, ...

    Abstract Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, 2D-FMs with room-temperature Curie temperatures (
    Language English
    Publishing date 2023-12-22
    Publishing country United States
    Document type Journal Article
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/acsnano.3c08998
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Vertically grown ultrathin Bi

    Chen, Jiabiao / Liu, Zhaochao / Dong, Xinyue / Gao, Zhansheng / Lin, Yuxuan / He, Yuyu / Duan, Yingnan / Cheng, Tonghuai / Zhou, Zhengyang / Fu, Huixia / Luo, Feng / Wu, Jinxiong

    Nature communications

    2023  Volume 14, Issue 1, Page(s) 4406

    Abstract: Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain ... ...

    Abstract Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi
    Language English
    Publishing date 2023-07-21
    Publishing country England
    Document type Journal Article
    ZDB-ID 2553671-0
    ISSN 2041-1723 ; 2041-1723
    ISSN (online) 2041-1723
    ISSN 2041-1723
    DOI 10.1038/s41467-023-40123-1
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Transferred Polymer-Encapsulated Metal Electrodes for Electrical Transport Measurements on Ultrathin Air-Sensitive Crystals.

    Zhang, Zheshan / Dong, Xinyue / Chen, Jiabiao / Liu, Zhaochao / Gao, Zhansheng / Chang, Xinyue / Du, Yaping / Jia, Chuancheng / Fu, Huixia / Luo, Feng / Wu, Jinxiong

    Small methods

    2023  Volume 7, Issue 9, Page(s) e2300177

    Abstract: Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile ... ...

    Abstract Owing to rapid property degradation after ambient exposure and incompatibility with conventional device fabrication process, electrical transport measurements on air-sensitive 2D materials have always been a big issue. Here, for the first time, a facile one-step polymer-encapsulated electrode transfer (PEET) method applicable for fragile 2D materials is developed, which showed great advantages of damage-free electrodes patterning and in situ polymer encapsulation preventing from H
    Language English
    Publishing date 2023-06-07
    Publishing country Germany
    Document type Journal Article
    ISSN 2366-9608
    ISSN (online) 2366-9608
    DOI 10.1002/smtd.202300177
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article ; Online: The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices.

    He, Yuyu / Xu, Qi / Dong, Xinyue / Liu, Junhao / Li, Li / Wang, Bing / Chen, Jiabiao / Zhang, Lei / Gao, Zhansheng / Ai, Wei / Liu, Zhaochao / Zhou, Zhengyang / Xu, Weigao / Fu, Huixia / Luo, Feng / Wu, Jinxiong

    ACS nano

    2023  Volume 17, Issue 11, Page(s) 10783–10791

    Abstract: The development of two-dimensional (2D) electronics is always accompanied by the discovery of 2D semiconductors with high mobility and specific crystal structures, which may bring revolutionary breakthrough on proof-of-concept devices and physics. Here, ... ...

    Abstract The development of two-dimensional (2D) electronics is always accompanied by the discovery of 2D semiconductors with high mobility and specific crystal structures, which may bring revolutionary breakthrough on proof-of-concept devices and physics. Here, Bi
    Language English
    Publishing date 2023-06-01
    Publishing country United States
    Document type Journal Article
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/acsnano.3c02263
    Database MEDical Literature Analysis and Retrieval System OnLINE

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