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  1. Article: Structural, Optical, Electrical, and Thermoelectric Properties of Bi

    Chuai, Ya-Hui / Wang, Yun-Fan / Bai, Yu

    Nanomaterials (Basel, Switzerland)

    2023  Volume 13, Issue 20

    Abstract: Low-temperature synthesis of ... ...

    Abstract Low-temperature synthesis of Bi
    Language English
    Publishing date 2023-10-18
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano13202785
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article: Epitaxial Growth of Bi

    Chuai, Ya-Hui / Zhu, Chao / Yue, Dan / Bai, Yu

    Frontiers in chemistry

    2022  Volume 10, Page(s) 847972

    Abstract: ... ...

    Abstract Epitaxial
    Language English
    Publishing date 2022-01-25
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2711776-5
    ISSN 2296-2646
    ISSN 2296-2646
    DOI 10.3389/fchem.2022.847972
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article: Epitaxial growth of highly infrared-transparent and conductive CuScO2 thin film by polymer-assisted-deposition method

    Chuai, Ya-Hui / Hu, Bing / Li, Ya-Dan / Shen, Hong-Zhi / Wang, Yi-Ding / Zhang, Yu / Zheng, Chuan-Tao

    RSC advances. 2015 June 02, v. 5, no. 61

    2015  

    Abstract: As an important wide bandgap p-type conductive delafossite material, CuScO2 (CSO) has been intensively investigated for its wide applications in multi-functional optoelectronic devices. In order to obtain both high infrared (IR) transparency and low ... ...

    Abstract As an important wide bandgap p-type conductive delafossite material, CuScO2 (CSO) has been intensively investigated for its wide applications in multi-functional optoelectronic devices. In order to obtain both high infrared (IR) transparency and low resistivity, we report on, for the first time, the experimental preparation of single phase epitaxial CSO thin film by using polymer-assisted-deposition (PAD) method. As a key point in the PAD process, the used polymer materials (PEI and EDTA) not only control the desired viscosity for the process, but also bind the metal ions to prevent premature precipitation and formation of metal oxide oligomers. The technique results in a homogeneous distribution of the metal precursors in the solution as well as the formation of uniform metal organic film. Due to the uniaxial locked epitaxy mechanism, the epitaxial growth of CSO (0001) thin film on a-plane sapphire is achieved, and the orientation relationship of the film with respect to the substrate are confirmed to be CSO[3R](0001)//a-Al2O3(112̄0). The obtained CSO thin film from the PAD technique exhibits a low electrical resistivity of 1.047 Ω cm at room temperature, and a high transmittance of 65–85% in the near-IR range and more than 85% in the mid-IR range. The presented technique does provide the possibility of preparing high-crystallinity oxide films which can be applicable over a wide wavelength range from visible band to infrared band.
    Keywords ambient temperature ; EDTA (chelating agent) ; electrical resistance ; electronic equipment ; films (materials) ; metal ions ; polymers ; transmittance ; viscosity ; wavelengths
    Language English
    Dates of publication 2015-0602
    Size p. 49301-49307.
    Publishing place The Royal Society of Chemistry
    Document type Article
    ISSN 2046-2069
    DOI 10.1039/c5ra07743e
    Database NAL-Catalogue (AGRICOLA)

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  4. Article: Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide

    Chuai, Ya-Hui / Wang, Xin / Shen, Hong-Zhi / Li, Ya-Dan / Zheng, Chuan-Tao / Wang, Yi-Ding

    Journal of materials science

    Volume v. 51,, Issue no. 7

    Abstract: Delafossite-type CuCr₁₋ₓ Zn ₓ O₂ (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr₁₋ₓ Zn ₓ O₂ oxides were investigated. Based ... ...

    Abstract Delafossite-type CuCr₁₋ₓ Zn ₓ O₂ (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr₁₋ₓ Zn ₓ O₂ oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum, the crystalline quality of the oxides is improved by the suitable substitution of Cr by Zn. The X-ray photoelectron spectroscopy (XPS) spectra reveal the chemical state of Zn is +2. The Hall and Seebeck coefficients of the pellet samples display a positive sign, indicating p-type conductive characteristics of the obtained oxides. The temperature-dependent resistivity of the oxides is proven to be consistent with small polaron hopping. For the three oxide samples with x = 0, 0.05, and 0.1, the activation energies for the polaron hopping between Zn²⁺ and Cr³⁺ sites are 54, 41.5, 32 meV, respectively, which is found to decrease with the increase of Zn content. The electrical conductivity can be remarkably improved by Zn-doping due to the small polaron hopping activation energy. These properties render this material promising as transparent electrode in optoelectronic industry.
    Keywords zinc ; electrodes ; activation energy ; electrical conductivity ; X-ray photoelectron spectroscopy ; copper ; sol-gel processing ; oxides ; industry ; X-ray diffraction ; chromium
    Language English
    Document type Article
    ISSN 0022-2461
    Database AGRIS - International Information System for the Agricultural Sciences and Technology

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