LIVIVO - The Search Portal for Life Sciences

zur deutschen Oberfläche wechseln
Advanced search

Search results

Result 1 - 10 of total 26

Search options

  1. Article ; Online: Wurtzite AlGaAs Nanowires.

    Leandro, L / Reznik, R / Clement, J D / Repän, J / Reynolds, M / Ubyivovk, E V / Shtrom, I V / Cirlin, G / Akopian, N

    Scientific reports

    2020  Volume 10, Issue 1, Page(s) 735

    Abstract: Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we ...

    Abstract Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs. Here we grow a series of wurtzite AlGaAs nanowires with Al content varying from 0.1 to 0.6, on silicon substrates and through a comparative structural and optical analysis we experimentally derive, for the first time, the formula for the bandgap of wurtzite AlGaAs. Moreover, bright emission and short lifetime of our nanowires suggest that wurtzite AlGaAs is a direct bandgap material.
    Language English
    Publishing date 2020-01-20
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-020-57563-0
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  2. Article: Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

    Dvoretckaia, Liliia / Gridchin, Vladislav / Mozharov, Alexey / Maksimova, Alina / Dragunova, Anna / Melnichenko, Ivan / Mitin, Dmitry / Vinogradov, Alexandr / Mukhin, Ivan / Cirlin, Georgy

    Nanomaterials (Basel, Switzerland)

    2022  Volume 12, Issue 12

    Abstract: The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light- ... ...

    Abstract The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO
    Language English
    Publishing date 2022-06-10
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano12121993
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  3. Article: Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes.

    Neplokh, Vladimir / Fedorov, Vladimir / Mozharov, Alexey / Kochetkov, Fedor / Shugurov, Konstantin / Moiseev, Eduard / Amador-Mendez, Nuño / Statsenko, Tatiana / Morozova, Sofia / Krasnikov, Dmitry / Nasibulin, Albert G / Islamova, Regina / Cirlin, George / Tchernycheva, Maria / Mukhin, Ivan

    Nanomaterials (Basel, Switzerland)

    2021  Volume 11, Issue 10

    Abstract: We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays ... ...

    Abstract We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.
    Language English
    Publishing date 2021-09-29
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano11102549
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  4. Article: Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates.

    Fedorov, Vladimir V / Berdnikov, Yury / Sibirev, Nickolay V / Bolshakov, Alexey D / Fedina, Sergey V / Sapunov, Georgiy A / Dvoretckaia, Liliia N / Cirlin, George / Kirilenko, Demid A / Tchernycheva, Maria / Mukhin, Ivan S

    Nanomaterials (Basel, Switzerland)

    2021  Volume 11, Issue 8

    Abstract: Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed ... ...

    Abstract Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
    Language English
    Publishing date 2021-07-28
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano11081949
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  5. Article ; Online: New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles.

    Bouravleuv, A / Ilkiv, I / Reznik, R / Kotlyar, K / Soshnikov, I / Cirlin, G / Brunkov, P / Kirilenko, D / Bondarenko, L / Nepomnyaschiy, A / Gruznev, D / Zotov, A / Saranin, A / Dhaka, V / Lipsanen, H

    Nanotechnology

    2017  Volume 29, Issue 4, Page(s) 45602

    Abstract: We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, ...

    Abstract We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.
    Language English
    Publishing date 2017-11-14
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aa9ab1
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  6. Article ; Online: Anapoles in Free-Standing III-V Nanodisks Enhancing Second-Harmonic Generation.

    Timofeeva, Maria / Lang, Lukas / Timpu, Flavia / Renaut, Claude / Bouravleuv, Alexei / Shtrom, Igor / Cirlin, George / Grange, Rachel

    Nano letters

    2018  Volume 18, Issue 6, Page(s) 3695–3702

    Abstract: Nonradiating electromagnetic configurations in nanostructures open new horizons for applications due to two essential features: a lack of energy losses and invisibility to the propagating electromagnetic field. Such radiationless configurations form a ... ...

    Abstract Nonradiating electromagnetic configurations in nanostructures open new horizons for applications due to two essential features: a lack of energy losses and invisibility to the propagating electromagnetic field. Such radiationless configurations form a basis for new types of nanophotonic devices, in which a strong electromagnetic field confinement can be achieved together with lossless interactions between nearby components. In our work, we present a new design of free-standing disk nanoantennas with nonradiating current distributions for the optical near-infrared range. We show a novel approach to creating nanoantennas by slicing III-V nanowires into standing disks using focused ion-beam milling. We experimentally demonstrate the suppression of the far-field radiation and the associated strong enhancement of the second-harmonic generation from the disk nanoantennas. With a theoretical analysis of the electromagnetic field distribution using multipole expansions in both spherical and Cartesian coordinates, we confirm that the demonstrated nonradiating configurations are anapoles. We expect that the presented procedure of designing and producing disk nanoantennas from nanowires becomes one of the standard approaches to fabricating controlled chains of standing nanodisks with different designs and configurations. These chains can be essential building blocks for new types of lasers and sensors with low power consumption.
    Language English
    Publishing date 2018-05-24
    Publishing country United States
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.8b00830
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  7. Article ; Online: Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices.

    Kochetkov, F M / Neplokh, V / Fedorov, V V / Bolshakov, A D / Sharov, V A / Eliseev, I E / Tchernycheva, M / Cirlin, G E / Nasibulin, A G / Islamova, R M / Mukhin, I S

    Nanotechnology

    2020  Volume 31, Issue 46, Page(s) 46LT01

    Abstract: Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating ... ...

    Abstract Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. The synthesized graft-copolymers of polydimethylsiloxane (PDMS) and polystyrene demonstrated two times lower adhesion to Si compared to standard PDMS, allowing 3 square inch area high quality silicone/nanowire membrane mechanical release, preserving the growth Si substrate for a further re-use after chemical cleaning. The 90% transparent single-walled carbon nanotubes electrical contacts to the embedded n-GaP nanowires demonstrated mechanical and electrical stability. The presented methods can be used for the fabrication of large scale flexible inorganic optoelectronic devices.
    Language English
    Publishing date 2020-09-02
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/abae98
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  8. Article ; Online: Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: up to the solubility limit and beyond.

    Talalaev, V G / Tomm, J W / Kukushkin, S A / Osipov, A V / Shtrom, I V / Kotlyar, K P / Mahler, F / Schilling, J / Reznik, R R / Cirlin, G E

    Nanotechnology

    2020  Volume 31, Issue 29, Page(s) 294003

    Abstract: We report a novel mechanism that allows the incorporation of Si into GaN nanowires up to and beyond the solubility limit. This mechanism is documented during the growth on vicinal (misoriented) SiC/Si hybrid substrates having the step bunches. Nanowires ... ...

    Abstract We report a novel mechanism that allows the incorporation of Si into GaN nanowires up to and beyond the solubility limit. This mechanism is documented during the growth on vicinal (misoriented) SiC/Si hybrid substrates having the step bunches. Nanowires that are grown at these locations become heavily Si doped. Such high Si concentrations were verified by secondary-ion mass spectrometry. Photoluminescence data also point to very high carrier concentrations. Moreover, Raman spectroscopy together with quantum chemical modelling shows the build up of Si into Ga sites and indicates even the possibility of the formation of a Ga(Si)N solid solution. The microscopic mechanism responsible for heavy doping and even alloying is diffusion driven by the mechano-chemical effect, which allows for the extremely efficient injection of Si atoms into the nanowires from the step bunches at the vicinal SiC/Si substrates.
    Language English
    Publishing date 2020-03-26
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ab83b6
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  9. Article: Low-Temperature In-Induced Holes Formation in Native-SiO

    R Reznik, Rodion / P Kotlyar, Konstantin / O Gridchin, Vladislav / V Ubyivovk, Evgeniy / V Federov, Vladimir / I Khrebtov, Artem / S Shevchuk, Dmitrii / E Cirlin, George

    Materials (Basel, Switzerland)

    2020  Volume 13, Issue 16

    Abstract: The reduction of substrate temperature is important in view of the integration of III-V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native- ...

    Abstract The reduction of substrate temperature is important in view of the integration of III-V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO
    Keywords covid19
    Language English
    Publishing date 2020-08-05
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2487261-1
    ISSN 1996-1944
    ISSN 1996-1944
    DOI 10.3390/ma13163449
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  10. Article ; Online: Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si.

    Bolshakov, A D / Fedorov, V V / Shugurov, K Yu / Mozharov, A M / Sapunov, G A / Shtrom, I V / Mukhin, M S / Uvarov, A V / Cirlin, G E / Mukhin, I S

    Nanotechnology

    2019  Volume 30, Issue 39, Page(s) 395602

    Abstract: The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs ... ...

    Abstract The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs growth on the bare Si (111) substrate, silicon nitride interlayer, predeposited AlN and GaO
    Language English
    Publishing date 2019-06-24
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ab2c0c
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

To top