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  1. Article: ZnO Nanowires: Growth, Properties, and Energy Applications.

    Consonni, Vincent

    Nanomaterials (Basel, Switzerland)

    2023  Volume 13, Issue 18

    Abstract: As a biocompatible semiconductor composed of abundant elements, ZnO, in the form of nanowires, exhibits remarkable properties, mainly originating from its wurtzite structure and correlated with its high aspect ratio at nanoscale dimensions [ ... ]. ...

    Abstract As a biocompatible semiconductor composed of abundant elements, ZnO, in the form of nanowires, exhibits remarkable properties, mainly originating from its wurtzite structure and correlated with its high aspect ratio at nanoscale dimensions [...].
    Language English
    Publishing date 2023-09-08
    Publishing country Switzerland
    Document type Editorial
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano13182519
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Chemical Bath Deposition of α-GaOOH with Tunable Morphology on Silicon Using the pH Adjustment.

    Hector, Guislain / Appert, Estelle / Roussel, Hervé / Gélard, Isabelle / Consonni, Vincent

    Inorganic chemistry

    2023  Volume 62, Issue 20, Page(s) 7764–7771

    Abstract: The growth of GaOOH by chemical bath deposition has received great attention over the past years as a first step to form ... ...

    Abstract The growth of GaOOH by chemical bath deposition has received great attention over the past years as a first step to form Ga
    Language English
    Publishing date 2023-05-09
    Publishing country United States
    Document type Journal Article
    ZDB-ID 1484438-2
    ISSN 1520-510X ; 0020-1669
    ISSN (online) 1520-510X
    ISSN 0020-1669
    DOI 10.1021/acs.inorgchem.3c00397
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article: Implementing the Reactor Geometry in the Modeling of Chemical Bath Deposition of ZnO Nanowires.

    Lausecker, Clément / Salem, Bassem / Baillin, Xavier / Consonni, Vincent

    Nanomaterials (Basel, Switzerland)

    2022  Volume 12, Issue 7

    Abstract: The formation of nanowires by chemical bath deposition is of great interest for a wide variety of optoelectronic, piezoelectric, and sensing devices, from which the theoretical description of their elongation process has emerged as a critical issue. ... ...

    Abstract The formation of nanowires by chemical bath deposition is of great interest for a wide variety of optoelectronic, piezoelectric, and sensing devices, from which the theoretical description of their elongation process has emerged as a critical issue. Despite its strong influence on the nanowire growth kinetics, reactor size has typically not been taken into account in the theoretical modeling developed so far. We report a new theoretical description of the axial growth rate of nanowires in dynamic conditions based on the solution of Fick's diffusion equations, implementing a sealed reactor of finite height as a varying parameter. The theoretical model is applied in various chemical bath deposition conditions in the case of the growth of ZnO nanowires, from which the influence of the reactor height is investigated and compared to experimental data. In particular, it is found that the use of reactor heights smaller than 2 cm significantly decreases the ZnO nanowires' axial growth rate in typical experimental conditions due to the faster depletion of reactants. The present approach is further used predictively, showing its high potential for the design of batch reactors for a wide variety of chemical precursors and semiconductor materials in applied research and industrial production.
    Language English
    Publishing date 2022-03-24
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano12071069
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article: Dimensional Roadmap for Maximizing the Piezoelectrical Response of ZnO Nanowire-Based Transducers: Impact of Growth Method.

    Lopez Garcia, Andrés Jenaro / Mouis, Mireille / Consonni, Vincent / Ardila, Gustavo

    Nanomaterials (Basel, Switzerland)

    2021  Volume 11, Issue 4

    Abstract: ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. The key parameters governing the general performance of the integrated devices include the dimensions of the ZnO nanowires used, ... ...

    Abstract ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. The key parameters governing the general performance of the integrated devices include the dimensions of the ZnO nanowires used, their doping level, and surface trap density. However, although the method used to grow these nanowires has a strong impact on these parameters, its influence on the performance of the devices has been neither elucidated nor optimized yet. In this paper, we implement numerical simulations based on the finite element method combining the mechanical, piezoelectric, and semiconducting characteristic of the devices to reveal the influence of the growth method of ZnO nanowires. The electrical response of vertically integrated piezoelectric nanogenerators (VING) based on ZnO nanowire arrays operating in compression mode is investigated in detail. The properties of ZnO nanowires grown by the most widely used methods are taken into account on the basis of a thorough and comprehensive analysis of the experimental data found in the literature. Our results show that the performance of VING devices should be drastically affected by growth method. Important optimization guidelines are found. In particular, the optimal nanowire radius that would lead to best device performance is deduced for each growth method.
    Language English
    Publishing date 2021-04-07
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano11040941
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition.

    Baillard, Adrien / Appert, Estelle / Weber, Matthieu / Jacob, Véronique / Roussel, Hervé / Rapenne, Laetitia / Chaix-Pluchery, Odette / Consonni, Vincent

    Inorganic chemistry

    2023  Volume 62, Issue 3, Page(s) 1165–1177

    Abstract: The simultaneous co-doping of ZnO nanowires grown by chemical bath deposition is of high interest for a large number of engineering devices, but the process conditions required and the resulting physicochemical processes are still largely unknown. Herein, ...

    Abstract The simultaneous co-doping of ZnO nanowires grown by chemical bath deposition is of high interest for a large number of engineering devices, but the process conditions required and the resulting physicochemical processes are still largely unknown. Herein, we show that the simultaneous co-doping of ZnO nanowires with Al and Ga following the addition of Al(NO
    MeSH term(s) Zinc Oxide ; Adsorption ; Electronics ; Hydrogen ; Oxygen
    Chemical Substances Zinc Oxide (SOI2LOH54Z) ; Hydrogen (7YNJ3PO35Z) ; Oxygen (S88TT14065)
    Language English
    Publishing date 2023-01-11
    Publishing country United States
    Document type Journal Article
    ZDB-ID 1484438-2
    ISSN 1520-510X ; 0020-1669
    ISSN (online) 1520-510X
    ISSN 0020-1669
    DOI 10.1021/acs.inorgchem.2c03503
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article: Modeling the Elongation of Nanowires Grown by Chemical Bath Deposition Using a Predictive Approach

    Lausecker, Clément / Baillin, Xavier / Consonni, Vincent / Salem, Bassem

    Journal of physical chemistry. 2019 Oct. 30, v. 123, no. 48

    2019  

    Abstract: The chemical bath deposition of nanowires is of high interest for a wide variety of optoelectronic, piezoelectric, and sensing devices, but a theoretical description of the elongation process is still missing despite its critical importance. By solving ... ...

    Abstract The chemical bath deposition of nanowires is of high interest for a wide variety of optoelectronic, piezoelectric, and sensing devices, but a theoretical description of the elongation process is still missing despite its critical importance. By solving Fick’s diffusion equations in combination with thermodynamic computations, we determine the expression of the axial growth rate of nanowires and its temporal dependence under dynamic conditions, namely, in a sealed reactor, where the depletion of chemical reactants occurs. The theoretical model is found to be in very good agreement with a large set of experimental data specifically collected in the case of the chemical bath deposition of ZnO nanowires. In particular, an activation energy of 198 ± 24 kJ/mol is deduced for the elongation process of ZnO nanowires, involving the energy barriers for both the dehydration process of Zn(II) species (i.e., [Zn(H2O)6]2+ ions) and their subsequent direct incorporation onto the c-plane top faces. This shows its high potential to enable in-depth investigation of the physicochemical processes at work in the chemical bath. By using the theoretical model as a predictive approach, a complete growth diagram reporting the evolution of the length of ZnO nanowires vs effective growth time and temperature is also obtained over a broad range of conditions, revealing its additional high potential for applied research and industrial purposes. The present general approach is further compatible with a broad range of chemicals in solution and of semiconducting materials grown by chemical bath deposition.
    Keywords activation energy ; applied research ; energy ; equations ; ions ; nanowires ; physical chemistry ; semiconductors ; temperature ; theoretical models ; zinc ; zinc oxide
    Language English
    Dates of publication 2019-1030
    Size p. 29476-29483.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1932-7455
    DOI 10.1021/acs.jpcc.9b08958
    Database NAL-Catalogue (AGRICOLA)

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  7. Article: Schottky Contacts on Polarity-Controlled Vertical ZnO Nanorods

    Lord, Alex M / Consonni, Vincent / Cossuet, Thomas / Donatini, Fabrice / Wilks, Steve P

    ACS applied materials & interfaces. 2020 Feb. 24, v. 12, no. 11

    2020  

    Abstract: Polarity-controlled growth of ZnO by chemical bath deposition provides a method for controlling the crystal orientation of vertical nanorod arrays. The ability to define the morphology and structure of the nanorods is essential to maximizing the ... ...

    Abstract Polarity-controlled growth of ZnO by chemical bath deposition provides a method for controlling the crystal orientation of vertical nanorod arrays. The ability to define the morphology and structure of the nanorods is essential to maximizing the performance of optical and electrical devices such as piezoelectric nanogenerators; however, well-defined Schottky contacts to the polar facets of the structures have yet to be explored. In this work, we demonstrate a process to fabricate metal–semiconductor–metal device structures from vertical arrays with Au contacts on the uppermost polar facets of the nanorods and show that the O-polar nanorods (∼0.44 eV) have a greater effective barrier height than the Zn-polar nanorods (∼0.37 eV). Oxygen plasma treatment is shown by cathodoluminescence spectroscopy to affect midgap defects associated with radiative emissions, which improves the Schottky contacts from weakly rectifying to strongly rectifying. Interestingly, the plasma treatment is shown to have a much greater effect in reducing the number of carriers in O-polar nanorods through quenching of the donor-type substitutional hydrogen on oxygen sites (HO) when compared to the zinc-vacancy-related hydrogen defect complexes (VZn−nH) in Zn-polar nanorods that evolve to lower-coordinated complexes. The effect on HO in the O-polar nanorods coincides with a large reduction in the visible-range defects, producing a lower conductivity and creating the larger effective barrier heights. This combination can allow radiative losses and charge leakage to be controlled, enhancing devices such as dynamic photodetectors, strain sensors, and light-emitting diodes while showing that the O-polar nanorods can outperform Zn-polar nanorods in such applications.
    Keywords emissions ; gold ; hydrogen ; light emitting diodes ; nanorods ; oxygen ; spectroscopy ; zinc oxide
    Language English
    Dates of publication 2020-0224
    Size p. 13217-13228.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.9b23260
    Database NAL-Catalogue (AGRICOLA)

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  8. Article: Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO:Ga and ZnO:Al Nanowires by Advanced Scanning Probe Microscopy

    Synhaivskyi, Oleksandr / Albertini, David / Gaffuri, Pierre / Chauveau, Jean-Michel / Consonni, Vincent / Gautier, Brice / Bremond, Georges

    Journal of physical chemistry. 2021 July 07, v. 125, no. 28

    2021  

    Abstract: A complete study based on advanced atomic force microscopy electrical mode called scanning spreading resistance microscopy (SSRM) is carried out on a series of samples of zinc oxide (ZnO) nanowires grown by chemical bath deposition with different doping ... ...

    Abstract A complete study based on advanced atomic force microscopy electrical mode called scanning spreading resistance microscopy (SSRM) is carried out on a series of samples of zinc oxide (ZnO) nanowires grown by chemical bath deposition with different doping concentrations using gallium (Ga). The concentration of free charge carriers determined through SSRM signal calibration with a specific molecular beam epitaxy-grown multilayer structure with variation in each layer of electrically active Ga doping ranges from 1 × 10¹⁷ to 7 × 10²⁰ at./cm³. It was found that the concentration of free charge carriers changed in every nanowire sample with a different ratio of the doping precursor. It increases from 3 × 10¹⁸ at./cm³ in non-intentionally doped nanowires to 7.6 × 10¹⁹ at./cm³ in samples grown with a doping precursor concentration [Ga(NO₃)₃]/[Zn(NO₃)₂] of more than 2%, which makes it possible to gradually dope the nanowires with more accurate regulation of the precursor concentration. A similar electrical activity for aluminum (Al)-doped nanowires is found. Piezoresponse force microscopy (PFM) in dual-frequency resonance tracking (DFRT) mode reveals a stable piezoelectric activity of highly doped nanowires that is presumably attributed to the increased surface trap density causing a Fermi level pinning when ZnO nanowires are grown at a high pH value favorable for the intentional doping. It also shows the degradation of piezoelectric properties caused by the “screening effect,” which directly correlates with the increase of free charge carrier concentration in nanowires. PFM in the DFRT mode is eventually proposed as an original direct method for analyzing the electrical properties of a single piezoelectric nanowire.
    Keywords aluminum ; atomic force microscopy ; gallium ; nanowires ; pH ; physical chemistry ; zinc oxide
    Language English
    Dates of publication 2021-0707
    Size p. 15373-15383.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1932-7455
    DOI 10.1021/acs.jpcc.1c00926
    Database NAL-Catalogue (AGRICOLA)

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  9. Article ; Online: Modulating the growth of chemically deposited ZnO nanowires and the formation of nitrogen- and hydrogen-related defects using pH adjustment.

    Villafuerte, José / Sarigiannidou, Eirini / Donatini, Fabrice / Kioseoglou, Joseph / Chaix-Pluchery, Odette / Pernot, Julien / Consonni, Vincent

    Nanoscale advances

    2022  Volume 4, Issue 7, Page(s) 1793–1807

    Abstract: ZnO nanowires (NWs) grown by chemical bath deposition (CBD) have received great interest for nanoscale engineering devices, but their formation in aqueous solution containing many impurities needs to be carefully addressed. In particular, the pH of the ... ...

    Abstract ZnO nanowires (NWs) grown by chemical bath deposition (CBD) have received great interest for nanoscale engineering devices, but their formation in aqueous solution containing many impurities needs to be carefully addressed. In particular, the pH of the CBD solution and its effect on the formation mechanisms of ZnO NWs and of nitrogen- and hydrogen-related defects in their center are still unexplored. By adjusting its value in a low- and high-pH region, we show the latent evolution of the morphological and optical properties of ZnO NWs, as well as the modulated incorporation of nitrogen- and hydrogen-related defects in their center using Raman and cathodoluminescence spectroscopy. The increase in pH is related to the increase in the oxygen chemical potential (
    Language English
    Publishing date 2022-02-23
    Publishing country England
    Document type Journal Article
    ISSN 2516-0230
    ISSN (online) 2516-0230
    DOI 10.1039/d1na00785h
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: In situ

    Cantelli, Valentina / Guillemin, Sophie / Sarigiannidou, Eirini / Carlá, Francesco / Bérini, Bruno / Chauveau, Jean-Michel / Fong, Dillon D / Renevier, Hubert / Consonni, Vincent

    Nanoscale

    2022  Volume 14, Issue 3, Page(s) 680–690

    Abstract: The selection of the polarity of ZnO nanowires grown by chemical bath deposition offers a great advantage for their integration into a wide variety of engineering devices. However, the nucleation process of ZnO nanowires and its dependence on their ... ...

    Abstract The selection of the polarity of ZnO nanowires grown by chemical bath deposition offers a great advantage for their integration into a wide variety of engineering devices. However, the nucleation process of ZnO nanowires and its dependence on their polarity is still unknown despite its importance for optimizing their morphology and properties and thus to enhance the related device performances. To tackle this major issue, we combine an
    Language English
    Publishing date 2022-01-20
    Publishing country England
    Document type Journal Article
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/d1nr06099f
    Database MEDical Literature Analysis and Retrieval System OnLINE

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