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  1. Article ; Online: Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures

    V.N. Murashev / S.A. Legotin / D.S. El’nikov / S.I. Didenko / O.I. Rabinovich

    Journal of Nano- and Electronic Physics, Vol 7, Iss 1, Pp 01009-1-01009-

    2015  Volume 3

    Abstract: In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is ... ...

    Abstract In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is discussed. Variants of new technical solutions based on photo-detectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated.
    Keywords Detector ; The detector coordinate functionally integrated structure ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-03-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  2. Article ; Online: Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

    V.N. Murashev / S.Yu. Yurchuk / S.A. Legotin / V.P. Yaromskiy / Yu.V. Osipov / V.P. Astahov / D.S. El’nikov / S.I. Didenko / O.I. Rabinovich / K.A. Kuz’mina

    Journal of Nano- and Electronic Physics, Vol 7, Iss 2, Pp 02023-1-02023-

    2015  Volume 5

    Abstract: In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction ... ...

    Abstract In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated.
    Keywords Silicon p-i-n-photodiode characteristics simulation ; Spectral sensitivity ; Optimization design of photodetector ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-06-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  3. Article ; Online: The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

    S.A. Legotin / V.N. Murashev / S.Yu. Yurchuk / V.P. Yaromskiy / V.P. Astahov / K.A. Kuz’mina / O.I. Rabinovich / D.S. El’nikov / U.V. Osipov / A.A. Krasnov / S.I. Didenko

    Journal of Nano- and Electronic Physics, Vol 7, Iss 4, Pp 04017-1-04017-

    2015  Volume 2

    Abstract: In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" ... ...

    Abstract In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.
    Keywords Silicon p-i-n structure ; Design optimizatio ; Electricity and magnetism ; QC501-766 ; Physics ; QC1-999 ; Science ; Q
    Language English
    Publishing date 2015-12-01T00:00:00Z
    Publisher Sumy State University
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

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