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  1. AU="Danielsen, Dorte R."
  2. AU="Konstantinos K Tsilidis"
  3. AU="Jörg Königstorfer"
  4. AU="Beath, K."
  5. AU="Trent, N H"
  6. AU="Harikrishna, Jennifer Ann"
  7. AU="Caleiro, Giovana Santos"
  8. AU="Sadia, Khulah"
  9. AU="Hong, Ka Young"
  10. AU="Mauricio Duque-Ramírez"
  11. AU="Ajjur, Salah B"
  12. AU="Maiti, Kaushik"
  13. AU="Sun, Haoqi"
  14. AU="Jie Lin"
  15. AU="Jiang Huang" AU="Jiang Huang"
  16. AU="Yongliang Zhang"
  17. AU="Ernest, C Steven"
  18. AU="Axel Haferkamp"
  19. AU="Ciocan, Alexandra"

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  1. Artikel ; Online: Significant Capacitance Enhancement via In Situ Exfoliation of Quasi-One-Dimensional Graphene Nanostripes in Supercapacitor Electrodes.

    Bagley, Jacob D / Danielsen, Dorte R / Yeh, Nai-Chang

    ACS omega

    2021  Band 6, Heft 8, Seite(n) 5679–5688

    Abstract: Graphene has received much attention as a supercapacitor electrode material due to its chemical inertness in preventing reaction with electrolytes and the large surface area due to its two-dimensional nature. However, when graphene sheets are processed ... ...

    Abstract Graphene has received much attention as a supercapacitor electrode material due to its chemical inertness in preventing reaction with electrolytes and the large surface area due to its two-dimensional nature. However, when graphene sheets are processed into electrodes, they tend to stack together and form a turbostratic graphite material with a much reduced surface area relative to the total surface area of individual graphene sheets. Separately, electrochemical exfoliation of graphite is one method of producing single-layer graphene, which is often used to produce graphene for supercapacitor electrodes, although such exfoliated graphene still leads to reduced surface areas due to stacking during electrode fabrication. To utilize the large surface area of graphene, graphene must be exfoliated in situ within a supercapacitor device after the device fabrication. However, graphitic electrodes are typically destroyed upon exfoliation, which is largely due to the loss of electrical connectivity among small exfoliated graphene flakes. Here, we report successful in situ exfoliation of graphene nanostripes, a type of quasi-one-dimensional graphene nanomaterial with large length-to-width aspect ratios, as the anode material in supercapacitors. We find that the in situ exfoliation leads to over 400% enhancement in capacitance as the result of retaining the electrical connectivity among exfoliated quasi-one-dimensional graphene nanostripes in addition to increasing the total surface area, paving ways to fully realizing the benefit of graphene electrodes in supercapacitor applications.
    Sprache Englisch
    Erscheinungsdatum 2021-02-18
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.0c06048
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  2. Artikel: Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching

    Danielsen, Dorte R. / Lyksborg-Andersen, Anton / Nielsen, Kirstine E. S. / Jessen, Bjarke S. / Booth, Timothy J. / Doan, Manh-Ha / Zhou, Yingqiu / Bøggild, Peter / Gammelgaard, Lene

    ACS applied materials & interfaces. 2021 Aug. 25, v. 13, no. 35

    2021  

    Abstract: Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are, however, compromised by nanometer-scale edge roughness and ... ...

    Abstract Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are, however, compromised by nanometer-scale edge roughness and resolution variability issues, which especially affect the performance of 2D materials. Here, we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF₆) may overcome some of these issues, showing results for hexagonal boron nitride (hBN), tungsten disulfide (WS₂), tungsten diselenide (WSe₂), molybdenum disulfide (MoS₂), and molybdenum ditelluride (MoTe₂). Scanning electron microscopy and transmission electron microscopy reveal that etching leads to anisotropic hexagonal features in the studied transition metal dichalcogenides, with the relative degree of anisotropy ranked as: WS₂ > WSe₂ > MoTe₂ ∼ MoS₂. Etched holes are terminated by zigzag edges while etched dots (protrusions) are terminated by armchair edges. This can be explained by Wulff constructions, taking the relative stabilities of the edges and the AA′ stacking order into account. Patterns in WS₂ are transferred to an underlying graphite layer, demonstrating a possible use for creating sub-10 nm features. In contrast, multilayer hBN exhibits no lateral anisotropy but shows consistent vertical etch angles, independent of crystal orientation. Using an hBN crystal as the base, ultrasharp corners can be created in lithographic patterns, which are then transferred to a graphite crystal underneath. We find that the anisotropic SF₆ reactive ion etching process makes it possible to downsize nanostructures and obtain smooth edges, sharp corners, and feature sizes significantly below the resolution limit of electron beam lithography. The nanostructured 2D materials can be used themselves or as etch masks to pattern other nanomaterials.
    Schlagwörter anisotropy ; boron nitride ; graphene ; molybdenum ; molybdenum disulfide ; photons ; roughness ; sulfur hexafluoride ; transmission electron microscopy ; tungsten
    Sprache Englisch
    Erscheinungsverlauf 2021-0825
    Umfang p. 41886-41894.
    Erscheinungsort American Chemical Society
    Dokumenttyp Artikel
    ISSN 1944-8252
    DOI 10.1021/acsami.1c09923
    Datenquelle NAL Katalog (AGRICOLA)

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  3. Artikel ; Online: Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching.

    Danielsen, Dorte R / Lyksborg-Andersen, Anton / Nielsen, Kirstine E S / Jessen, Bjarke S / Booth, Timothy J / Doan, Manh-Ha / Zhou, Yingqiu / Bøggild, Peter / Gammelgaard, Lene

    ACS applied materials & interfaces

    2021  Band 13, Heft 35, Seite(n) 41886–41894

    Abstract: Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are, however, compromised by nanometer-scale edge roughness and ... ...

    Abstract Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are, however, compromised by nanometer-scale edge roughness and resolution variability issues, which especially affect the performance of 2D materials. Here, we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF
    Sprache Englisch
    Erscheinungsdatum 2021-08-25
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c09923
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  4. Artikel ; Online: Programming twist angle and strain profiles in 2D materials.

    Kapfer, Maëlle / Jessen, Bjarke S / Eisele, Megan E / Fu, Matthew / Danielsen, Dorte R / Darlington, Thomas P / Moore, Samuel L / Finney, Nathan R / Marchese, Ariane / Hsieh, Valerie / Majchrzak, Paulina / Jiang, Zhihao / Biswas, Deepnarayan / Dudin, Pavel / Avila, José / Watanabe, Kenji / Taniguchi, Takashi / Ulstrup, Søren / Bøggild, Peter /
    Schuck, P J / Basov, Dmitri N / Hone, James / Dean, Cory R

    Science (New York, N.Y.)

    2023  Band 381, Heft 6658, Seite(n) 677–681

    Abstract: Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly ...

    Abstract Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions caused by random strain. We manipulated the moiré patterns in hetero- and homobilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with tunable wavelength and ultralow disorder. Our results may enable detailed studies of ultralow-disorder moiré systems and the realization of precise strain-engineered devices.
    Sprache Englisch
    Erscheinungsdatum 2023-08-10
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ZDB-ID 128410-1
    ISSN 1095-9203 ; 0036-8075
    ISSN (online) 1095-9203
    ISSN 0036-8075
    DOI 10.1126/science.ade9995
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  5. Buch ; Online: Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching

    Danielsen, Dorte R. / Lyksborg-Andersen, Anton / Nielsen, Kirstine E. S. / Jessen, Bjarke S. / Booth, Timothy J. / Doan, Manh-Ha / Zhou, Yingqiu / Bøggild, Peter / Gammelgaard, Lene

    2021  

    Abstract: Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution ... ...

    Abstract Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF6) may overcome some of these issues, showing results for hexagonal boron nitride (hBN), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2). Scanning and transmission electron microscopy reveal that etching leads to anisotropic hexagonal features in the studied transition metal dichalcogenides, with the relative degree of anisotropy ranked as: WS2 > WSe2 > MoTe2 / MoS2. Etched holes are terminated by zigzag edges while etched dots (protrusions) are terminated by armchair edges. This can be explained by Wulff constructions, taking the relative stabilities of the edges and the AA stacking order into account. Patterns in WS2 are transferred to an underlying graphite layer, demonstrating a possible use for creating sub-10 nm features. In contrast, multilayer hBN exhibits no lateral anisotropy, but shows consistent vertical etch angles, independent of crystal orientation. This is used to create super-resolution lithographic patterns with ultra-sharp corners at the base of the hBN crystal, which are transferred into an underlying graphite crystal. We find that the anisotropic SF6 reactive ion etching process makes it possible to downsize nanostructures to obtain smooth edges, sharp corners, and feature sizes significantly below the resolution limit of electron beam lithography. The nanostructured 2D materials can be used themselves or as etch-masks to pattern other nanomaterials.
    Schlagwörter Condensed Matter - Materials Science ; Condensed Matter - Mesoscale and Nanoscale Physics ; Physics - Applied Physics
    Thema/Rubrik (Code) 669
    Erscheinungsdatum 2021-10-07
    Erscheinungsland us
    Dokumenttyp Buch ; Online
    Datenquelle BASE - Bielefeld Academic Search Engine (Lebenswissenschaftliche Auswahl)

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  6. Buch ; Online: Programming moir\'e patterns in 2D materials by bending

    Kapfer, Mäelle / Jessen, Bjarke S. / Eisele, Megan E. / Fu, Matthew / Danielsen, Dorte R. / Darlington, Thomas P. / Moore, Samuel L. / Finney, Nathan R. / Marchese, Ariane / Hsieh, Valerie / Majchrzak, Paulina / Jiang, Zhihao / Biswas, Deepnarayan / Dudin, Pavel / Avila, José / Watanabe, Kenji / Taniguchi, Takashi / Ulstrup, Søren / Bøggild, Peter /
    Schuck, P. J. / Basov, Dmitri N. / Hone, James / Dean, Cory R.

    2022  

    Abstract: Moir\'e superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moir\'e pattern is highly sensitive to the interlayer atomic registry, and current ... ...

    Abstract Moir\'e superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moir\'e pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moir\'e patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moir\'e patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moir\'e systems and the realization of precise strain-engineered devices.
    Schlagwörter Condensed Matter - Mesoscale and Nanoscale Physics ; Condensed Matter - Materials Science
    Thema/Rubrik (Code) 530
    Erscheinungsdatum 2022-09-21
    Erscheinungsland us
    Dokumenttyp Buch ; Online
    Datenquelle BASE - Bielefeld Academic Search Engine (Lebenswissenschaftliche Auswahl)

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