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  1. Article ; Online: Thermal transport in metal-NbO

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Das, Sujan Kumar / Liang, Yan / Elliman, Robert G

    Nanoscale

    2023  Volume 15, Issue 16, Page(s) 7559–7565

    Abstract: Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal ... ...

    Abstract Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal properties of the device-structure. In this study, we investigate the effect of the metal electrodes on the threshold switching response of NbO
    Language English
    Publishing date 2023-04-27
    Publishing country England
    Document type Journal Article
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/d3nr00173c
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb

    Nandi, Sanjoy Kumar / Nath, Shimul Kanti / Das, Sujan Kumar / Murdoch, Billy J / Ratcliff, Thomas / McCulloch, Dougal G / Elliman, Robert G

    ACS applied materials & interfaces

    2023  Volume 15, Issue 50, Page(s) 58613–58622

    Abstract: The resistive switching response of two terminal metal/oxide/metal devices depends on the stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal electrode to reduce the oxide layer. Here, we investigate compositional ... ...

    Abstract The resistive switching response of two terminal metal/oxide/metal devices depends on the stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal electrode to reduce the oxide layer. Here, we investigate compositional and structural changes induced in Nb/Nb
    Language English
    Publishing date 2023-12-05
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.3c14431
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: High Spatial Resolution Thermal Mapping of Volatile Switching in NbO

    Nandi, Sanjoy Kumar / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Das, Sujan Kumar / Ratcliff, Thomas / Elliman, Robert G

    ACS applied materials & interfaces

    2022  Volume 14, Issue 25, Page(s) 29025–29031

    Abstract: Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based ... ...

    Abstract Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (∼100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbO
    Language English
    Publishing date 2022-06-14
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c06870
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Thermal Conductivity of Amorphous NbO

    Nandi, Sanjoy Kumar / Das, Sujan Kumar / Cui, Yubo / El Helou, Assaad / Nath, Shimul Kanti / Ratcliff, Thomas / Raad, Peter / Elliman, Robert G

    ACS applied materials & interfaces

    2022  Volume 14, Issue 18, Page(s) 21270–21277

    Abstract: Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device ... ...

    Abstract Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbO
    Language English
    Publishing date 2022-04-29
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c04618
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Thermal Conductivity of Amorphous NbOₓ Thin Films and Its Effect on Volatile Memristive Switching

    Nandi, Sanjoy Kumar / Das, Sujan Kumar / Cui, Yubo / El Helou, Assaad / Nath, Shimul Kanti / Ratcliff, Thomas / Raad, Peter / Elliman, Robert G.

    ACS applied materials & interfaces. 2022 Apr. 29, v. 14, no. 18

    2022  

    Abstract: Metal–oxide–metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device ... ...

    Abstract Metal–oxide–metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbOₓ films as a function of film composition and temperature. The thermal conductivity is shown to vary between 0.86 and 1.25 W·m–¹·K–¹ over the composition (x = 1.9 to 2.5) and temperature (293 to 453 K) ranges examined, and to increase with temperature for all compositions. The impact of these thermal conductivity variations on the quasistatic current–voltage (I–V) characteristics and oscillator dynamics of MOM devices is then investigated using a lumped-element circuit model. Understanding such effects is essential for engineering functional devices for nonvolatile memory and brain-inspired computing applications.
    Keywords heat ; models ; niobium ; temperature ; thermal conductivity
    Language English
    Dates of publication 2022-0429
    Size p. 21270-21277.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c04618
    Database NAL-Catalogue (AGRICOLA)

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  6. Article: High Spatial Resolution Thermal Mapping of Volatile Switching in NbOₓ-Based Memristor Using In Situ Scanning Thermal Microscopy

    Nandi, Sanjoy Kumar / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Das, Sujan Kumar / Ratcliff, Thomas / Elliman, Robert G.

    ACS applied materials & interfaces. 2022 June 14, v. 14, no. 25

    2022  

    Abstract: Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based ... ...

    Abstract Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (∼100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbOₓ-based cross-bar and nanovia devices with Pt top electrodes. The measurements on cross-bar devices reproduce the current redistribution and confinement processes previously observed by TRTI but without the need to coat the electrodes with a material of high thermo-reflectance coefficient (e.g., Au), while those on the nanovia devices highlight the spatial resolution of the technique. The measured temperature distributions are compared with those obtained from physics-based finite-element simulations and suggest that thermal boundary resistance plays an important role in heat transfer between the active device volume and the top electrode.
    Keywords electrodes ; heat transfer ; infrared spectroscopy ; temperature
    Language English
    Dates of publication 2022-0614
    Size p. 29025-29031.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c06870
    Database NAL-Catalogue (AGRICOLA)

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  7. Article ; Online: Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing.

    Nath, Shimul Kanti / Das, Sujan Kumar / Nandi, Sanjoy Kumar / Xi, Chen / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Wang, Zhongrui / Zhang, Songqing / Zhu, Rui-Jie / Eshraghian, Jason / Sun, Xiao / Lu, Teng / Bian, Yue / Syed, Nitu / Pan, Wenwu / Wang, Han / Lei, Wen / Fu, Lan /
    Faraone, Lorenzo / Liu, Yun / Elliman, Robert G

    Advanced materials (Deerfield Beach, Fla.)

    2024  , Page(s) e2400904

    Abstract: The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold ... ...

    Abstract The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold switching in V
    Language English
    Publishing date 2024-03-22
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202400904
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  8. Book ; Online: Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

    Nandi, Sanjoy Kumar / Das, Sujan Kumar / Estherby, Caleb / Gentle, Angus / Elliman, Robert G.

    2020  

    Abstract: Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they exhibit a ... ...

    Abstract Metal-oxide-metal devices based on amorphous VOx are shown to exhibit one of two distinct negative differential resistance (NDR) characteristics depending on the maximum current employed for electroforming. For low compliance currents they exhibit a smooth S-type characteristic and have a temperature-dependent device resistance characterised by an activation energy of 0.25 eV, consistent with conduction in polycrystalline VO2, while for high-compliance currents they exhibit an abrupt snap-back characteristic and a resistance characterised by an activation energy of 0.025 eV, consistent with conduction in oxygen deficient VOx. In both cases, the temperature dependence of the switching voltage implies that the conductivity change is due to the insulator-metal transition in VO2. From this analysis it is concluded that electroforming at low currents creates a conductive filament comprised largely of polycrystalline VO2, while electroforming at high currents creates a composite structure comprised of VO2 and a conductive halo of oxygen deficient VOx. The effect of electroforming on the NDR mode is then explained with reference to a lumped element model of filamentary conduction that includes the effect of a parallel resistance created by the halo. These results provide new insight into the NDR response of vanadium-oxide-based devices and a basis for designing devices with specific characteristics.

    Comment: 14 pages and 7 Figures
    Keywords Physics - Applied Physics ; Condensed Matter - Materials Science
    Subject code 600
    Publishing date 2020-09-02
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  9. Article ; Online: Physical Origin of Negative Differential Resistance in V

    Das, Sujan Kumar / Nandi, Sanjoy Kumar / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Lu, Teng / Liu, Yun / Haeger, Tobias / Heiderhoff, Ralf / Riedl, Thomas / Ratcliff, Thomas / Elliman, Robert Glen

    Advanced materials (Deerfield Beach, Fla.)

    2022  Volume 35, Issue 8, Page(s) e2208477

    Abstract: Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the ... ...

    Abstract Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V
    Language English
    Publishing date 2022-12-30
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202208477
    Database MEDical Literature Analysis and Retrieval System OnLINE

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