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  1. Article ; Online: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    He, Rongrui / Day, Todd D / Sparks, Justin R / Sullivan, Nichole F / Badding, John V

    Advanced materials (Deerfield Beach, Fla.)

    2016  Volume 28, Issue 28, Page(s) 5939–5942

    Abstract: Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon ... ...

    Abstract Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors.
    Language English
    Publishing date 2016-05-13
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.201600415
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    He, Rongrui / Day, Todd D / Sparks, Justin R / Sullivan, Nichole F / Badding, John V

    Advanced materials (Deerfield Beach, Fla.)

    2016  Volume 28, Issue 28, Page(s) 5938

    Abstract: On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of ... ...

    Abstract On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures.
    Language English
    Publishing date 2016-06-28
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.201670195
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Confined Chemical Fluid Deposition of Ferromagnetic Metalattices.

    Liu, Yunzhi / Kempinger, Susan / He, Rongrui / Day, Todd D / Moradifar, Parivash / Yu, Shih-Ying / Russell, Jennifer L / Torres, Vincent M / Xu, Pengtao / Mallouk, Thomas E / Mohney, Suzanne E / Alem, Nasim / Samarth, Nitin / Badding, John V

    Nano letters

    2017  Volume 18, Issue 1, Page(s) 546–552

    Abstract: A magnetic, metallic inverse opal fabricated by infiltration into a silica nanosphere template assembled from spheres with diameters less than 100 nm is an archetypal example of a "metalattice". In traditional quantum confined structures such as dots, ... ...

    Abstract A magnetic, metallic inverse opal fabricated by infiltration into a silica nanosphere template assembled from spheres with diameters less than 100 nm is an archetypal example of a "metalattice". In traditional quantum confined structures such as dots, wires, and thin films, the physical dynamics in the free dimensions is typically largely decoupled from the behavior in the confining directions. In a metalattice, the confined and extended degrees of freedom cannot be separated. Modeling predicts that magnetic metalattices should exhibit multiple topologically distinct magnetic phases separated by sharp transitions in their hysteresis curves as their spatial dimensions become comparable to and smaller than the magnetic exchange length, potentially enabling an interesting class of "spin-engineered" magnetic materials. The challenge to synthesizing magnetic inverse opal metalattices from templates assembled from sub-100 nm spheres is in infiltrating the nanoscale, tortuous voids between the nanospheres void-free with a suitable magnetic material. Chemical fluid deposition from supercritical carbon dioxide could be a viable approach to void-free infiltration of magnetic metals in view of the ability of supercritical fluids to penetrate small void spaces. However, we find that conventional chemical fluid deposition of the magnetic late transition metal nickel into sub-100 nm silica sphere templates in conventional macroscale reactors produces a film on top of the template that appears to largely block infiltration. Other deposition approaches also face difficulties in void-free infiltration into such small nanoscale templates or require conducting substrates that may interfere with properties measurements. Here we report that introduction of "spatial confinement" into the chemical fluid reactor allows for fabrication of nearly void-free nickel metalattices by infiltration into templates with sphere sizes from 14 to 100 nm. Magnetic measurements suggest that these nickel metalattices behave as interconnected systems rather than as isolated superparamagnetic systems coupled solely by dipolar interactions.
    Language English
    Publishing date 2017-12-21
    Publishing country United States
    Document type Journal Article ; Research Support, Non-U.S. Gov't ; Research Support, U.S. Gov't, Non-P.H.S.
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.7b04633
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Silicon p-i-n junction fibers.

    He, Rongrui / Day, Todd D / Krishnamurthi, Mahesh / Sparks, Justin R / Sazio, Pier J A / Gopalan, Venkatraman / Badding, John V

    Advanced materials (Deerfield Beach, Fla.)

    2012  Volume 25, Issue 10, Page(s) 1461–1467

    Abstract: Flexible Si p-i-n junction fibers made by high pressure chemical vapor deposition offer new opportunities in textile photovoltaics and optoelectronics, as exemplified by their photovoltaic properties, gigahertz bandwidth for photodetection, and ability ... ...

    Abstract Flexible Si p-i-n junction fibers made by high pressure chemical vapor deposition offer new opportunities in textile photovoltaics and optoelectronics, as exemplified by their photovoltaic properties, gigahertz bandwidth for photodetection, and ability to waveguide light.
    Language English
    Publishing date 2012-12-04
    Publishing country Germany
    Document type Journal Article ; Research Support, Non-U.S. Gov't ; Research Support, U.S. Gov't, Non-P.H.S.
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.201203879
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Extreme electronic bandgap modification in laser-crystallized silicon optical fibres.

    Healy, Noel / Mailis, Sakellaris / Bulgakova, Nadezhda M / Sazio, Pier J A / Day, Todd D / Sparks, Justin R / Cheng, Hiu Y / Badding, John V / Peacock, Anna C

    Nature materials

    2014  Volume 13, Issue 12, Page(s) 1122–1127

    Abstract: For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near- and mid-infrared, silicon is now promising to have a similar impact on ... ...

    Abstract For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical properties in the near- and mid-infrared, silicon is now promising to have a similar impact on photonics. The ability to incorporate both optical and electronic functionality in a single material offers the tantalizing prospect of amplifying, modulating and detecting light within a monolithic platform. However, a direct consequence of silicon's transparency is that it cannot be used to detect light at telecommunications wavelengths. Here, we report on a laser processing technique developed for our silicon fibre technology through which we can modify the electronic band structure of the semiconductor material as it is crystallized. The unique fibre geometry in which the silicon core is confined within a silica cladding allows large anisotropic stresses to be set into the crystalline material so that the size of the bandgap can be engineered. We demonstrate extreme bandgap reductions from 1.11 eV down to 0.59 eV, enabling optical detection out to 2,100 nm.
    Language English
    Publishing date 2014-09-28
    Publishing country England
    Document type Journal Article
    ZDB-ID 2088679-2
    ISSN 1476-4660 ; 1476-1122
    ISSN (online) 1476-4660
    ISSN 1476-1122
    DOI 10.1038/nmat4098
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article: Confined High-Pressure Chemical Deposition of Hydrogenated Amorphous Silicon

    Baril, Neil F / Badding John V / Borhan Ali / Day Todd D / Gopalan Venkatraman / He Rongrui / Healy Noel / Keshavarzi Banafsheh / Krishnamurthi Mahesh / Peacock Anna C / Sazio Pier J. A / Sparks Justin R

    Journal of the American Chemical Society. 2012 Jan. 11, v. 134, no. 1

    2012  

    Abstract: Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH₄ precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow ... ...

    Abstract Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH₄ precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ∼0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells.
    Keywords atmospheric deposition ; gases ; hydrogen ; photonics ; photovoltaic cells ; semiconductors ; silane ; silicon ; temperature
    Language English
    Dates of publication 2012-0111
    Size p. 19-22.
    Publishing place American Chemical Society
    Document type Article
    ZDB-ID 3155-0
    ISSN 1520-5126 ; 0002-7863
    ISSN (online) 1520-5126
    ISSN 0002-7863
    DOI 10.1021%2Fja2067862
    Database NAL-Catalogue (AGRICOLA)

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    In stock of ZB MED Bonn / Germany

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  7. Article ; Online: Confined high-pressure chemical deposition of hydrogenated amorphous silicon.

    Baril, Neil F / He, Rongrui / Day, Todd D / Sparks, Justin R / Keshavarzi, Banafsheh / Krishnamurthi, Mahesh / Borhan, Ali / Gopalan, Venkatraman / Peacock, Anna C / Healy, Noel / Sazio, Pier J A / Badding, John V

    Journal of the American Chemical Society

    2012  Volume 134, Issue 1, Page(s) 19–22

    Abstract: Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow ... ...

    Abstract Hydrogenated amorphous silicon (a-Si:H) is one of the most technologically important semiconductors. The challenge in producing it from SiH(4) precursor is to overcome a significant kinetic barrier to decomposition at a low enough temperature to allow for hydrogen incorporation into a deposited film. The use of high precursor concentrations is one possible means to increase reaction rates at low enough temperatures, but in conventional reactors such an approach produces large numbers of homogeneously nucleated particles in the gas phase, rather than the desired heterogeneous deposition on a surface. We report that deposition in confined micro-/nanoreactors overcomes this difficulty, allowing for the use of silane concentrations many orders of magnitude higher than conventionally employed while still realizing well-developed films. a-Si:H micro-/nanowires can be deposited in this way in extreme aspect ratio, small-diameter optical fiber capillary templates. The semiconductor materials deposited have ~0.5 atom% hydrogen with passivated dangling bonds and good electronic properties. They should be suitable for a wide range of photonic and electronic applications such as nonlinear optical fibers and solar cells.
    Language English
    Publishing date 2012-01-11
    Publishing country United States
    Document type Journal Article
    ZDB-ID 3155-0
    ISSN 1520-5126 ; 0002-7863
    ISSN (online) 1520-5126
    ISSN 0002-7863
    DOI 10.1021/ja2067862
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    In stock of ZB MED Bonn / Germany

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