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  1. AU="Dempsey, Connor P"
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  1. Artikel ; Online: Strain Solitons in an Epitaxially Strained van der Waals-like Material.

    Dong, Jason T / Inbar, Hadass S / Dempsey, Connor P / Engel, Aaron N / Palmstrøm, Christopher J

    Nano letters

    2024  Band 24, Heft 15, Seite(n) 4493–4497

    Abstract: Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch. Novel electronic properties of strain solitons were predicted and observed. To date, strain solitons have ... ...

    Abstract Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch. Novel electronic properties of strain solitons were predicted and observed. To date, strain solitons have been observed only in exfoliated crystals or mechanically strained crystals. The lack of a scalable approach toward the generation of strain solitons poses a significant challenge in the study of and use of their properties. Here, we report the formation of strain solitons with epitaxial growth of bismuth on InSb(111)B by molecular beam epitaxy. The morphology of the strain solitons for films of varying thickness is characterized with scanning tunneling microscopy, and the local strain state is determined from atomic resolution images. Bending in the solitons is attributed to interactions with the interface, and large angle bending is associated with edge dislocations. Our results enable the scalable generation of strain solitons.
    Sprache Englisch
    Erscheinungsdatum 2024-03-18
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.4c00382
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  2. Artikel ; Online: Gate-tunable superconducting diode effect in a three-terminal Josephson device.

    Gupta, Mohit / Graziano, Gino V / Pendharkar, Mihir / Dong, Jason T / Dempsey, Connor P / Palmstrøm, Chris / Pribiag, Vlad S

    Nature communications

    2023  Band 14, Heft 1, Seite(n) 3078

    Abstract: The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit ... ...

    Abstract The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits.
    Sprache Englisch
    Erscheinungsdatum 2023-05-29
    Erscheinungsland England
    Dokumenttyp Journal Article
    ZDB-ID 2553671-0
    ISSN 2041-1723 ; 2041-1723
    ISSN (online) 2041-1723
    ISSN 2041-1723
    DOI 10.1038/s41467-023-38856-0
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  3. Artikel ; Online: Selective control of conductance modes in multi-terminal Josephson junctions.

    Graziano, Gino V / Gupta, Mohit / Pendharkar, Mihir / Dong, Jason T / Dempsey, Connor P / Palmstrøm, Chris / Pribiag, Vlad S

    Nature communications

    2022  Band 13, Heft 1, Seite(n) 5933

    Abstract: The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of a ... ...

    Abstract The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of a multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work, we employ a quantum point contact geometry in three-terminal Josephson devices to demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions.
    Sprache Englisch
    Erscheinungsdatum 2022-10-08
    Erscheinungsland England
    Dokumenttyp Journal Article
    ZDB-ID 2553671-0
    ISSN 2041-1723 ; 2041-1723
    ISSN (online) 2041-1723
    ISSN 2041-1723
    DOI 10.1038/s41467-022-33682-2
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  4. Buch ; Online: Electronic structure of InSb (001), (110), and (111)B surfaces

    Dong, Jason T. / Inbar, Hadass S. / Pendharkar, Mihir / van Schijndel, Teun A. J. / Young, Elliot C. / Dempsey, Connor P. / Palmstrøm, Christopher J.

    2023  

    Abstract: The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface ... ...

    Abstract The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned near the valence band edge. This observed pinning is consistent with a charge neutrality level lying near the valence band maximum. Sb termination was observed to shift the surface Fermi-level position by up to $254 \pm 35$ meV towards the conduction band on the InSb (001) surface and $60 \pm 35$ meV towards the conduction band on the InSb(111)B surface. The surface Sb on the (001) can shift the surface from electron depletion to electron accumulation. We propose the shift in the Fermi-level pinning is due to charge transfer from Sb clusters on the Sb terminated surfaces. Additionally, many sub-gap states were observed for the (111)B (3x1) surface, which are attributed to the disordered nature of this surface. This work demonstrates the tuning of the Fermi-level pinning position of InSb surfaces with Sb termination.

    Comment: 7 pages, 5 figures
    Schlagwörter Condensed Matter - Materials Science
    Thema/Rubrik (Code) 530
    Erscheinungsdatum 2023-02-18
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    Dokumenttyp Buch ; Online
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  5. Buch ; Online: Gate-tunable Superconducting Diode Effect in a Three-terminal Josephson Device

    Gupta, Mohit / Graziano, Gino V. / Pendharkar, Mihir / Dong, Jason T. / Dempsey, Connor P. / Palmstrøm, Chris / Pribiag, Vlad S.

    2022  

    Abstract: The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit ... ...

    Abstract The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits.
    Schlagwörter Condensed Matter - Mesoscale and Nanoscale Physics ; Condensed Matter - Superconductivity
    Thema/Rubrik (Code) 621
    Erscheinungsdatum 2022-06-16
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    Dokumenttyp Buch ; Online
    Datenquelle BASE - Bielefeld Academic Search Engine (Lebenswissenschaftliche Auswahl)

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  6. Buch ; Online: Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

    Inbar, Hadass S. / Zubair, Muhammad / Dong, Jason T. / Engel, Aaron N / Dempsey, Connor P. / Chang, Yu Hao / Nishihaya, Shinichi / Khalid, Shoaib / Fedorov, Alexei V. / Janotti, Anderson / Palmstrøm, Chris J.

    2023  

    Abstract: Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the ( ... ...

    Abstract Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials.
    Schlagwörter Condensed Matter - Materials Science
    Erscheinungsdatum 2023-02-01
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    Dokumenttyp Buch ; Online
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  7. Buch ; Online: Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)

    Etheridge, James M. / Dill, Joseph / Dempsey, Connor P. / Pendharkar, Mihir / Garcia-Barriocanal, Javier / Yu, Guichuan / Pribiag, Vlad S. / Crowell, Paul A. / Palmstrøm, Chris J.

    2023  

    Abstract: We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other ... ...

    Abstract We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors.

    Comment: 5 figures
    Schlagwörter Condensed Matter - Materials Science
    Erscheinungsdatum 2023-05-23
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    Dokumenttyp Buch ; Online
    Datenquelle BASE - Bielefeld Academic Search Engine (Lebenswissenschaftliche Auswahl)

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  8. Buch ; Online: Growth and characterization of $\alpha$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

    Engel, Aaron N. / Dempsey, Connor P. / Inbar, Hadass S. / Dong, Jason T. / Nishihaya, Shinichi / Chang, Yu Hao / Fedorov, Alexei V. / Hashimoto, Makoto / Lu, Donghui / Palmstrøm, Christopher J.

    2023  

    Abstract: alpha$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality ... ...

    Abstract $\alpha$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $\alpha$-Sn thin films. $\alpha$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $\alpha$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $\alpha$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response.
    Schlagwörter Condensed Matter - Materials Science
    Thema/Rubrik (Code) 530
    Erscheinungsdatum 2023-11-27
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    Dokumenttyp Buch ; Online
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  9. Artikel ; Online: Supercurrent parity meter in a nanowire Cooper pair transistor.

    Wang, Ji-Yin / Schrade, Constantin / Levajac, Vukan / van Driel, David / Li, Kongyi / Gazibegovic, Sasa / Badawy, Ghada / Op Het Veld, Roy L M / Lee, Joon Sue / Pendharkar, Mihir / Dempsey, Connor P / Palmstrøm, Chris J / Bakkers, Erik P A M / Fu, Liang / Kouwenhoven, Leo P / Shen, Jie

    Science advances

    2022  Band 8, Heft 16, Seite(n) eabm9896

    Abstract: We study a Cooper pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, ... ...

    Abstract We study a Cooper pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, because of the Coulomb blockade, mediate a supercurrent by coherent cotunneling of Cooper pairs. We show that the supercurrent resulting from such cotunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably, this phase offset persists when a subgap state approaches zero energy and, based on theoretical considerations, permits parity measurements of subgap states by supercurrent interferometry. Such supercurrent parity measurements could, in a series of experiments, provide an alternative approach for manipulating and protecting quantum information stored in the isolated subgap levels of superconducting islands.
    Sprache Englisch
    Erscheinungsdatum 2022-04-22
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ZDB-ID 2810933-8
    ISSN 2375-2548 ; 2375-2548
    ISSN (online) 2375-2548
    ISSN 2375-2548
    DOI 10.1126/sciadv.abm9896
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  10. Buch ; Online: Tuning the Band Topology of GdSb by Epitaxial Strain

    Inbar, Hadass S. / Ho, Dai Q. / Chatterjee, Shouvik / Engel, Aaron N. / Khalid, Shoaib / Dempsey, Connor P. / Pendharkar, Mihir / Chang, Yu Hao / Nishihaya, Shinichi / Fedorov, Alexei V. / Lu, Donghui / Hashimoto, Makoto / Read, Dan / Janotti, Anderson / Palmstrøm, Christopher J.

    2022  

    Abstract: Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there ...

    Abstract Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.
    Schlagwörter Condensed Matter - Materials Science ; Condensed Matter - Other Condensed Matter
    Thema/Rubrik (Code) 530
    Erscheinungsdatum 2022-11-28
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