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  1. Article ; Online: Graphene-In

    Mukherjee, Subhrajit / Dutta, Debopriya / Ghosh, Anurag / Koren, Elad

    ACS nano

    2023  Volume 17, Issue 22, Page(s) 22287–22298

    Abstract: Functional diversification at the single-device level has become essential for emerging optical neural network (ONN) development. Stable ferroelectricity harnessed with strong light sensitivity in α- ... ...

    Abstract Functional diversification at the single-device level has become essential for emerging optical neural network (ONN) development. Stable ferroelectricity harnessed with strong light sensitivity in α-In
    Language English
    Publishing date 2023-11-06
    Publishing country United States
    Document type Journal Article
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/acsnano.3c03820
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Edge State Quantum Interference in Twisted Graphitic Interfaces.

    Oz, Annabelle / Dutta, Debopriya / Nitzan, Abraham / Hod, Oded / Koren, Elad

    Advanced science (Weinheim, Baden-Wurttemberg, Germany)

    2022  Volume 9, Issue 14, Page(s) e2102261

    Abstract: Zigzag edges in graphitic systems exhibit localized electronic states that drastically affect their properties. Here, room-temperature charge transport experiments across a single graphitic interface are reported, in which the interlayer current is ... ...

    Abstract Zigzag edges in graphitic systems exhibit localized electronic states that drastically affect their properties. Here, room-temperature charge transport experiments across a single graphitic interface are reported, in which the interlayer current is confined to the contact edges. It is shown that the current exhibits pronounced oscillations of up to ≈40 µA with a dominant period of ≈5 Å with respect to lateral displacement that do not directly correspond to typical graphene lattice spacing. The origin of these features is computationally rationalized as quantum mechanical interference of localized edge states showing significant amplitude and interlayer coupling variations as a function of the interface stacking configuration. Such interference effects may therefore dominate the transport properties of low-dimensional graphitic interfaces.
    Language English
    Publishing date 2022-03-13
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 2808093-2
    ISSN 2198-3844 ; 2198-3844
    ISSN (online) 2198-3844
    ISSN 2198-3844
    DOI 10.1002/advs.202102261
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Edge-Based Two-Dimensional α-In

    Dutta, Debopriya / Mukherjee, Subhrajit / Uzhansky, Michael / Mohapatra, Pranab K / Ismach, Ariel / Koren, Elad

    ACS applied materials & interfaces

    2023  Volume 15, Issue 14, Page(s) 18505–18515

    Abstract: Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α- ... ...

    Abstract Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α-In
    Language English
    Publishing date 2023-03-31
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.3c00590
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: The scaling laws of edge vs. bulk interlayer conduction in mesoscale twisted graphitic interfaces.

    Dutta, Debopriya / Oz, Annabelle / Hod, Oded / Koren, Elad

    Nature communications

    2020  Volume 11, Issue 1, Page(s) 4746

    Abstract: The unusual electronic properties of edges in graphene-based systems originate from the pseudospinorial character of their electronic wavefunctions associated with their non-trivial topological structure. This is manifested by the appearance of ... ...

    Abstract The unusual electronic properties of edges in graphene-based systems originate from the pseudospinorial character of their electronic wavefunctions associated with their non-trivial topological structure. This is manifested by the appearance of pronounced zero-energy electronic states localized at the material zigzag edges that are expected to have a significant contribution to the interlayer transport in such systems. In this work, we utilize a unique experimental setup and electronic transport calculations to quantitatively distinguish between edge and bulk transport, showing that their relative contribution strongly depends on the angular stacking configuration and interlayer potential. Furthermore, we find that, despite of the strong localization of edge state around the circumference of the contact, edge transport in incommensurate interfaces can dominate up to contact diameters of the order of 2 μm, even in the presence of edge disorder. The intricate interplay between edge and bulk transport contributions revealed in the present study may have profound consequences on practical applications of nanoscale twisted graphene-based electronics.
    Language English
    Publishing date 2020-09-21
    Publishing country England
    Document type Journal Article
    ZDB-ID 2553671-0
    ISSN 2041-1723 ; 2041-1723
    ISSN (online) 2041-1723
    ISSN 2041-1723
    DOI 10.1038/s41467-020-18597-0
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Maskless Device Fabrication and Laser-Induced Doping in MoS₂ Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist

    Kafri, Alonit / Dutta, Debopriya / Mukherjee, Subhrajit / Mohapatra, Pranab K. / Ismach, Ariel / Koren, Elad

    ACS applied materials & interfaces. 2021 Jan. 19, v. 13, no. 4

    2021  

    Abstract: We present a novel maskless device fabrication technique for rapid prototyping of two-dimensional (2D)-based electronic materials. The technique is based on a thermally activated and self-developed cyclic polyphthalaldehyde (c-PPA) resist using a ... ...

    Abstract We present a novel maskless device fabrication technique for rapid prototyping of two-dimensional (2D)-based electronic materials. The technique is based on a thermally activated and self-developed cyclic polyphthalaldehyde (c-PPA) resist using a commercial Raman system and 532 nm laser illumination. Following the successful customization of electrodes to form field effect transistors based on MoS₂ monolayers, the laser-induced electronic doping of areas beneath the metal contacts that were exposed during lithography was investigated using both surface potential mapping and device characterization. An effective change in the doping level was introduced depending on the laser intensity, i.e., low laser powers resulted in p-doping, while high laser powers resulted in n-doping. Fabricated devices present a low contact resistance down to 10 kΩ·μm at a back-gate voltage of VG = 80 V, which is attributed to the laser-induced n-type doping at the metal contact regions.
    Keywords area ; electric potential difference ; electrodes ; fields ; lasers ; lighting ; materials ; metals ; rapid methods ; surfaces ; transistors
    Language English
    Dates of publication 2021-0119
    Size p. 5399-5405.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.0c19194
    Database NAL-Catalogue (AGRICOLA)

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  6. Book ; Online: Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device

    Dutta, Debopriya / Mukherjee, Subhrajit / Uzhansky, Michael / Mohapatra, Pranab K. / Ismach, Ariel / Koren, Elad

    2023  

    Abstract: Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been ... ...

    Abstract Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlapping alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for sub-nanometric scale non-volatile device miniaturization. Furthermore the induced asymmetric polarization enables enhanced photogenerated carriers separation resulting in extremely high photoresponse of 1275 AW-1 in the visible range and strong non-volatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping alpha-In2Se3-MoS2 based FeFETs to engineer multimodal non-volatile nanoscale electronic and optoelectronic devices.
    Keywords Condensed Matter - Materials Science ; Physics - Applied Physics
    Publishing date 2023-01-02
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  7. Article ; Online: Maskless Device Fabrication and Laser-Induced Doping in MoS

    Kafri, Alonit / Dutta, Debopriya / Mukherjee, Subhrajit / Mohapatra, Pranab K / Ismach, Ariel / Koren, Elad

    ACS applied materials & interfaces

    2021  Volume 13, Issue 4, Page(s) 5399–5405

    Abstract: We present a novel maskless device fabrication technique for rapid prototyping of two-dimensional (2D)-based electronic materials. The technique is based on a thermally activated and self-developed cyclic polyphthalaldehyde (c-PPA) resist using a ... ...

    Abstract We present a novel maskless device fabrication technique for rapid prototyping of two-dimensional (2D)-based electronic materials. The technique is based on a thermally activated and self-developed cyclic polyphthalaldehyde (c-PPA) resist using a commercial Raman system and 532 nm laser illumination. Following the successful customization of electrodes to form field effect transistors based on MoS
    Language English
    Publishing date 2021-01-19
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c19194
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  8. Article ; Online: Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In

    Mukherjee, Subhrajit / Dutta, Debopriya / Mohapatra, Pranab K / Dezanashvili, Lital / Ismach, Ariel / Koren, Elad

    ACS nano

    2020  Volume 14, Issue 12, Page(s) 17543–17553

    Abstract: The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we ... ...

    Abstract The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In
    Language English
    Publishing date 2020-11-19
    Publishing country United States
    Document type Journal Article
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/acsnano.0c08146
    Database MEDical Literature Analysis and Retrieval System OnLINE

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