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  1. Article ; Online: Engineering the Threshold Switching Response of Nb

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Ratcliff, Thomas / Elliman, Robert Glen

    ACS applied materials & interfaces

    2021  Volume 13, Issue 2, Page(s) 2845–2852

    Abstract: Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and ... ...

    Abstract Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) characteristics of cross-point devices fabricated from undoped Nb
    Language English
    Publishing date 2021-01-06
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c19544
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Li, Shuai / Elliman, Robert Glen

    Nanotechnology

    2020  Volume 31, Issue 23, Page(s) 235701

    Abstract: Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/ ... ...

    Abstract Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb
    Language English
    Publishing date 2020-02-20
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ab7889
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Anatomy of filamentary threshold switching in amorphous niobium oxide.

    Li, Shuai / Liu, Xinjun / Nandi, Sanjoy Kumar / Elliman, Robert Glen

    Nanotechnology

    2018  Volume 29, Issue 37, Page(s) 375705

    Abstract: The threshold switching behavior of Pt/ ... ...

    Abstract The threshold switching behavior of Pt/NbO
    Language English
    Publishing date 2018-06-25
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aacee4
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Nanoscale modification of one-dimensional single-crystalline cuprous oxide.

    Das, Pritam / Rajbhar, Manoj K / Elliman, Robert Glen / Möller, Wolfhard / Facsko, Stefan / Chatterjee, Shyamal

    Nanotechnology

    2019  Volume 30, Issue 36, Page(s) 365304

    Abstract: In this work we report for the first time a method to modify the surface of ... ...

    Abstract In this work we report for the first time a method to modify the surface of Cu
    Language English
    Publishing date 2019-05-08
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ab2018
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Book ; Online: Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbOx

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Li, Shuai / Elliman, Robert Glen

    2019  

    Abstract: Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negative ... ...

    Abstract Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching under negative bias but to have a response under positive bias that depends on the choice of metal. Three distinct responses are highlighted: Devices with Nb and Ti top electrodes are shown to exhibit stable threshold switching with symmetric characteristics for both positive and negative polarities; devices with Cr top electrodes are shown to exhibit stable threshold switching but with asymmetric hysteresis windows under positive and negative polarities; and devices with Ta and Hf electrodes are shown to exhibit an integrated threshold-memory (1S1M) response. Based on thermodynamic data and lumped element modelling these effects are attributed to the formation of a metal-oxide interlayer and its response to field-induced oxygen exchange. These results provide important insight into the physical origin of the switching response and pathways for engineering devices with reliable switching characteristics.
    Keywords Physics - Applied Physics ; Condensed Matter - Materials Science
    Subject code 600
    Publishing date 2019-12-17
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  6. Article ; Online: Physical Origin of Negative Differential Resistance in V

    Das, Sujan Kumar / Nandi, Sanjoy Kumar / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Lu, Teng / Liu, Yun / Haeger, Tobias / Heiderhoff, Ralf / Riedl, Thomas / Ratcliff, Thomas / Elliman, Robert Glen

    Advanced materials (Deerfield Beach, Fla.)

    2022  Volume 35, Issue 8, Page(s) e2208477

    Abstract: Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the ... ...

    Abstract Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V
    Language English
    Publishing date 2022-12-30
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202208477
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article ; Online: Coupling dynamics of Nb/Nb

    Li, Shuai / Liu, Xinjun / Nandi, Sanjoy Kumar / Venkatachalam, Dinesh Kumar / Elliman, Robert Glen

    Nanotechnology

    2017  Volume 28, Issue 12, Page(s) 125201

    Abstract: The coupling dynamics of capacitively coupled Nb/ ... ...

    Abstract The coupling dynamics of capacitively coupled Nb/Nb
    Language English
    Publishing date 2017-03-24
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aa5de0
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  8. Article ; Online: Room temperature synthesis of HfO

    Nandi, Sanjoy Kumar / Venkatachalam, Dinesh Kumar / Ruffell, Simon / England, Jonathan / Grande, Pedro Luis / Vos, Maarten / Elliman, Robert Glen

    Nanotechnology

    2018  Volume 29, Issue 42, Page(s) 425601

    Abstract: Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating high-quality ... ...

    Abstract Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating high-quality HfO
    Language English
    Publishing date 2018-08-01
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aad756
    Database MEDical Literature Analysis and Retrieval System OnLINE

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