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  1. AU="Fallah, Milad"
  2. AU="Singh, Meetali"
  3. AU="Hickerson K. P."
  4. AU="Arvaniti, Christina"
  5. AU="Lu, Hongxia"

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  1. Article ; Online: Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe.

    Ghobadi, Nader / Zamani Meymian, Mohammad-Reza / Fallah, Milad

    Scientific reports

    2024  Volume 14, Issue 1, Page(s) 7754

    Abstract: This study explores the simultaneous presence of two metal ions of Nickel (Ni) and Copper (Cu) on the formation of a metal selenide (Ni-doped CuSe) in an alkaline environment. The impact of Ni ions on creating the second optical transitions is ... ...

    Abstract This study explores the simultaneous presence of two metal ions of Nickel (Ni) and Copper (Cu) on the formation of a metal selenide (Ni-doped CuSe) in an alkaline environment. The impact of Ni ions on creating the second optical transitions is investigated. Different concentrations amounts of Ni ions (0.01, 0.02, and 0.03 mol) are utilized to produce Ni-doped CuSe semiconductor thin films through a chemical solution deposition method with deposition times varying from 3 to 6 h. Absorbance spectra are employed to determine the band-gap, while Field Emission Scanning Electron Microscopy is utilized for morphological analysis. Structural and elemental analyses are conducted using X-ray Diffraction and Energy Dispersive X-ray Spectroscopy techniques. Additionally, a relatively innovative approach for determining the optical transitions, termed the Derivation Ineffective Thickness Method (DITM), is employed. DITM eliminates the need for thin film thickness and assumptions about the type of transition (direct or indirect) for band-gap calculation. Moreover, a comparison is made between the band-gap obtained from the Tauc model and the transitions obtained by DITM method. Furthermore, it is demonstrated that the optical transitions exhibit two distinct band-gaps associated with nickel selenide (NiSe) as second transition and copper selenide (CuSe) as fundamental transition. The presence of Ni is also found to enhance crystal quality. The study also briefly explores the improved photocatalytic properties of CuSe in the presence of Ni.
    Language English
    Publishing date 2024-04-02
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-024-58528-3
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article: Enhanced Performance of Planar Perovskite Solar Cells Using Thioacetamide-Treated SnS₂ Electron Transporting Layer Based on Molecular Ink

    Keshtmand, Razieh / Zamani-Meymian, Mohammad-Reza / Fallah, Milad

    Energy & fuels. 2022 May 13, v. 36, no. 11

    2022  

    Abstract: Improving the electro-optical properties of the electron transport layers (ETLs) is considered one of the most promising solutions to increase the efficiency of the perovskite solar cells (PSCs). In this study, we focused on the spin-coated tin(IV) ... ...

    Abstract Improving the electro-optical properties of the electron transport layers (ETLs) is considered one of the most promising solutions to increase the efficiency of the perovskite solar cells (PSCs). In this study, we focused on the spin-coated tin(IV) sulfide (SnS₂) as the ETL with two different sulfur sources, thiourea (TU) and thioacetamide (TAA) (SnS₂(TU) and SnS₂(TAA)), and investigated the effects of surface passivation of the prepared ETL with TU and TAA (SnS₂-TU and SnS₂-TAA). The treatment is shown to be useful in reducing the surface roughness of the SnS₂ ETL and to passivate the interfacial trap states at the ETL/perovskite interface, leading to better contact between them. Among the prepared samples, the SnS₂(TU) led to a smoother ETL rather than SnS₂(TAA). Finally, the best results of the produced PSCs were related to the samples with SnS₂(TU) and passivated with TAA (SnS₂(TU)-TAA) in which the power conversion efficiency (PCE) promoted from 11.98% in the case of SnS₂(TU) ETL to 15.14% in SnS₂(TU)-TAA ETL with a 37% increase in power conversion efficiency (PCE). As an important role, TAA treatment could compensate the sulfur vacancy which was proved by XPS tests. Moreover, the SnS₂(TU)-TAA ETL increased the long-term stability of the device without any encapsulation under ambient conditions, retaining 86% of the initial PCE after 30 days, while the device with the SnS₂(TU) ETL could maintain about 64% of the original PCE.
    Keywords electron transfer ; encapsulation ; energy ; sulfides ; sulfur ; surface roughness ; thiourea ; tin
    Language English
    Dates of publication 2022-0513
    Size p. 5897-5909.
    Publishing place American Chemical Society
    Document type Article
    ZDB-ID 1483539-3
    ISSN 1520-5029 ; 0887-0624
    ISSN (online) 1520-5029
    ISSN 0887-0624
    DOI 10.1021/acs.energyfuels.2c00423
    Database NAL-Catalogue (AGRICOLA)

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