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  1. Article: Septoplasty Effect on the Enhancement of Airflow Distribution and Particle Deposition in Nasal Cavity: A Numerical Study.

    Tao, Feng / Feng, Yu / Sun, Baobin / Wang, Jianwei / Chen, Xiaole / Gong, Jiarui

    Healthcare (Basel, Switzerland)

    2022  Volume 10, Issue 9

    Abstract: The surgery outcomes after fixing nasal airway obstruction (NAO) are sometimes not satisfactory in improving ventilations of airflow. A case study is presented in this paper with computational fluid dynamics applied to determine the key factors for ... ...

    Abstract The surgery outcomes after fixing nasal airway obstruction (NAO) are sometimes not satisfactory in improving ventilations of airflow. A case study is presented in this paper with computational fluid dynamics applied to determine the key factors for successful septoplasty plans for a patient with a deviated nasal septum. Specifically, airflow, as well as particle transport and deposition were predicted in a pre-surgery nasal cavity model reconstructed from patient-specific Computer Tomography (CT) images and two post-surgery nasal cavity models (i.e., VS1 and VS2) with different virtual surgery plans A and B. Plan A corrected the deviated septal cartilage, the perpendicular plate of the ethmoid bone, vomer, and nasal crest of the maxilla. Plan B further corrected the obstruction in the nasal vestibule and caudal nasal septal deviation based on Plan A. Simulations were performed in the three nose-to-throat airway models to compare the airflow velocity distributions and local particle depositions. Numerical results indicate that the VS2 model has a better improvement in airflow allocation between the two sides than the VS1 model. In addition, the deposition fractions in the VS2 model are lower than that in both the original and VS1 models, up to 25.32%. The better surgical plan (i.e., Plan B) reduces the particle deposition on the convex side, but slightly increases the deposition on the concave side. However, the overall deposition in the nasal cavity is reduced.
    Language English
    Publishing date 2022-09-05
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2721009-1
    ISSN 2227-9032
    ISSN 2227-9032
    DOI 10.3390/healthcare10091702
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Book ; Online: Band alignment of grafted monocrystalline Si (001)/$\beta$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

    Gong, Jiarui / Zhou, Jie / Dheenan, Ashok / Sheikhi, Moheb / Alema, Fikadu / Ng, Tien Khee / Pasayat, Shubhra S. / Gan, Qiaoqiang / Osinsky, Andrei / Gambin, Vincent / Gupta, Chirag / Rajan, Siddharth / Ooi, Boon S. / Ma, Zhenqiang

    2023  

    Abstract: Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the ... ...

    Abstract Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $\beta$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $\beta$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$\beta$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $\beta$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$\beta$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$\beta$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $\beta$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$\beta$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$\beta$-Ga$_2$O$_3$ heterostructures.

    Comment: 18 pages, 5 figures
    Keywords Condensed Matter - Materials Science
    Subject code 530
    Publishing date 2023-12-01
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  3. Book ; Online: Demonstration of a monocrystalline GaAs-$\beta$-Ga$_2$O$_3$ p-n heterojunction

    Zhou, Jie / Sheikhi, Moheb / Dheenan, Ashok / Abbasi, Haris / Gong, Jiarui / Liu, Yang / Adamo, Carolina / Marshall, Patrick / Wriedt, Nathan / Cheung, Clincy / Qiu, Shuoyang / Ng, Tien Khee / Gan, Qiaoqiang / Gambin, Vincent / Ooi, Boon S. / Rajan, Siddharth / Ma, Zhenqiang

    2023  

    Abstract: In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type ... ...

    Abstract In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$\beta$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$\beta$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$\Omega\cdot$cm$^2$.

    Comment: 14 pages, 5 figures
    Keywords Physics - Applied Physics ; Condensed Matter - Materials Science
    Publishing date 2023-10-05
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  4. Book ; Online: Influences of ALD Al$_2$O$_3$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

    Gong, Jiarui / Kim, Jisoo / Ng, TienKhee / Lu, Kuangye / Kim, Donghyeok / Zhou, Jie / Liu, Dong / Kim, Jeehwan / Ooi, Boon S. / Ma, Zhenqiang

    2021  

    Abstract: Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of ... ...

    Abstract Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al$_2$O$_3$ at the interface of Si/GaN and GaAs/GaN, has shown the feasibility to overcome the poor p-type doping challenge of GaN by providing epitaxy-like interface quality. However, the surface band-bending of GaN that could be influenced by the UO Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with UO Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the UO Al2O3 can help in suppressing the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend of the upward band-bending energy from 0.48 eV down to 0.12 eV as the number of UO Al2O3 deposition cycles is increased from 0 to 20 cycles. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the change in the density of fixed charge at the GaN surface caused by UO Al2O3 is the main reason for the surface band-bending modulation. The potential implication of the surface band-bending results of AlGaAs/GaAs/GaN npn heterojunction bipolar transistor (HBT) was preliminarily studied via Silvaco(R) simulations.

    Comment: 31 pages, 9 figures
    Keywords Physics - Applied Physics ; Condensed Matter - Materials Science
    Subject code 530
    Publishing date 2021-09-09
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  5. Book ; Online: Monocrystalline Si/$\beta$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

    Gong, Jiarui / Kim, Donghyeok / Jang, Hokyung / Alema, Fikadu / Wang, Qingxiao / Ng, Tien Khee / Qiu, Shuoyang / Zhou, Jie / Su, Xin / Lin, Qinchen / Singh, Ranveer / Abbasi, Haris / Chabak, Kelson / Jessen, Gregg / Cheung, Clincy / Gambin, Vincent / Pasayat, Shubhra S. / Osinsky, Andrei / Boon /
    Ooi, S. / Gupta, Chirag / Ma, Zhenqiang

    2023  

    Abstract: The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered the ... ...

    Abstract The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $\beta$-Ga$_2$O$_3$ can face severe challenges in further advancing the $\beta$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$\beta$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$\beta$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $\beta$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$\beta$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $\beta$-Ga$_2$O$_3$-based transistors.

    Comment: 32 pages, 10 figures. The preliminary data were presented as a poster in the 5th US Gallium Oxide Workshop, Washington, DC. August 07-10, 2022
    Keywords Physics - Applied Physics ; Condensed Matter - Materials Science
    Publishing date 2023-05-30
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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