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  1. AU="Goswami, Sreetosh"
  2. AU="Saraiva, A A F"
  3. AU=Wickenden Julie A
  4. AU="Darbes, Lynae A"
  5. AU="Ostermann, Philipp"
  6. AU="Qiu, Y Z"
  7. AU="Luo, Yue-Jia"
  8. AU="Tamandl, Dietmar" AU="Tamandl, Dietmar"
  9. AU="Holzer, Timothy R"
  10. AU="Zhou, C L"
  11. AU="Lomax, Tony"

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  1. Artikel ; Online: Potential and challenges of computing with molecular materials.

    Williams, R Stanley / Goswami, Sreebrata / Goswami, Sreetosh

    Nature materials

    2024  

    Abstract: We are at an inflection point in computing where traditional technologies are incapable of keeping up with the demands of exploding data collection and artificial intelligence. This challenge demands a leap to a new platform as transformative as the ... ...

    Abstract We are at an inflection point in computing where traditional technologies are incapable of keeping up with the demands of exploding data collection and artificial intelligence. This challenge demands a leap to a new platform as transformative as the digital silicon revolution. Over the past 30 years molecular materials for computing have generated great excitement but continually fallen short of performance and reliability requirements. However, recent reports indicate that those historical limitations may have been resolved. Here we assess the current state of computing with molecular-based materials, especially using transition metal complexes of redox active ligands, in the context of neuromorphic computing. We describe two complementary research paths necessary to determine whether molecular materials can be the basis of a new computing technology: continued exploration of the molecular electronic properties that enable computation and, equally important, the process development for on-chip integration of molecular materials.
    Sprache Englisch
    Erscheinungsdatum 2024-03-29
    Erscheinungsland England
    Dokumenttyp Journal Article ; Review
    ZDB-ID 2088679-2
    ISSN 1476-4660 ; 1476-1122
    ISSN (online) 1476-4660
    ISSN 1476-1122
    DOI 10.1038/s41563-024-01820-4
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  2. Artikel ; Online: Many-Body Molecular Interactions in a Memristor.

    Rath, Santi P / Thompson, Damien / Goswami, Sreebrata / Goswami, Sreetosh

    Advanced materials (Deerfield Beach, Fla.)

    2022  Band 35, Heft 37, Seite(n) e2204551

    Abstract: Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This ... ...

    Abstract Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This opportunity is not cultivated in molecular memristors because their low-temperature charge transport, which is a route to decipher molecular many-body interactions, is unexplored. To address this, robust, temperature-resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current-voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady-state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.
    Sprache Englisch
    Erscheinungsdatum 2022-09-28
    Erscheinungsland Germany
    Dokumenttyp Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202204551
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  3. Artikel ; Online: Energy and Space Efficient Parallel Adder Using Molecular Memristors.

    Yi, Su-In / Rath, Santi Prasad / Deepak / Venkatesan, T / Bhat, Navakanta / Goswami, Sreebrata / Williams, R Stanley / Goswami, Sreetosh

    Advanced materials (Deerfield Beach, Fla.)

    2022  Band 35, Heft 37, Seite(n) e2206128

    Abstract: A breakthrough in in-memory computing technologies hinges on the development of appropriate material platforms that can overcome their existing limitations, such as larger than optimal footprint and multiple serial computational steps, with potential ... ...

    Abstract A breakthrough in in-memory computing technologies hinges on the development of appropriate material platforms that can overcome their existing limitations, such as larger than optimal footprint and multiple serial computational steps, with potential accumulation of errors. Using a molecular switching element with multiple non-monotonic and deterministic transitions, the device count and the number of computational steps can be substantially reduced. With molecular materials, however, the realization of a reliable and robust platform is an unattained goal for decades. Here, crossbar arrays with up to 64 molecular memristors are fabricated to experimentally demonstrate 8-bit serial and 4-bit parallel adders that operate for thousands of measurement cycles with an estimated error probability of 10
    Sprache Englisch
    Erscheinungsdatum 2022-12-16
    Erscheinungsland Germany
    Dokumenttyp Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202206128
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  4. Artikel ; Online: Author Correction: Charge disproportionate molecular redox for discrete memristive and memcapacitive switching.

    Goswami, Sreetosh / Rath, Santi P / Thompson, Damien / Hedström, Svante / Annamalai, Meenakshi / Pramanick, Rajib / Ilic, B Robert / Sarkar, Soumya / Hooda, Sonu / Nijhuis, Christian A / Martin, Jens / Williams, R Stanley / Goswami, Sreebrata / Venkatesan, T

    Nature nanotechnology

    2023  Band 18, Heft 9, Seite(n) 1116

    Sprache Englisch
    Erscheinungsdatum 2023-06-27
    Erscheinungsland England
    Dokumenttyp Published Erratum
    ZDB-ID 2254964-X
    ISSN 1748-3395 ; 1748-3387
    ISSN (online) 1748-3395
    ISSN 1748-3387
    DOI 10.1038/s41565-023-01461-9
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  5. Artikel ; Online: Nanometer-Scale Uniform Conductance Switching in Molecular Memristors.

    Goswami, Sreetosh / Deb, Debalina / Tempez, Agnès / Chaigneau, Marc / Rath, Santi Prasad / Lal, Manohar / Ariando / Williams, R Stanley / Goswami, Sreebrata / Venkatesan, Thirumalai

    Advanced materials (Deerfield Beach, Fla.)

    2020  Band 32, Heft 42, Seite(n) e2004370

    Abstract: One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous ... ...

    Abstract One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution <7 nm), it is shown that molecular switching in the films is uniform from hundreds of micrometers down to the nanoscale and that conductance value exactly correlates with spectroscopically determined molecular redox states. This provides a deterministic molecular route to obtain spatially homogeneous, forming-free switching that can conceivably overcome the chronic problems of robustness, consistency, reproducibility, and scalability in organic memristors.
    Sprache Englisch
    Erscheinungsdatum 2020-09-06
    Erscheinungsland Germany
    Dokumenttyp Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202004370
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  6. Artikel ; Online: Decision trees within a molecular memristor.

    Goswami, Sreetosh / Pramanick, Rajib / Patra, Abhijeet / Rath, Santi Prasad / Foltin, Martin / Ariando, A / Thompson, Damien / Venkatesan, T / Goswami, Sreebrata / Williams, R Stanley

    Nature

    2021  Band 597, Heft 7874, Seite(n) 51–56

    Abstract: Profuse dendritic-synaptic interconnections among neurons in the neocortex embed intricate logic structures enabling sophisticated decision-making that vastly outperforms any artificial electronic ... ...

    Abstract Profuse dendritic-synaptic interconnections among neurons in the neocortex embed intricate logic structures enabling sophisticated decision-making that vastly outperforms any artificial electronic analogues
    Sprache Englisch
    Erscheinungsdatum 2021-09-01
    Erscheinungsland England
    Dokumenttyp Journal Article ; Research Support, Non-U.S. Gov't
    ZDB-ID 120714-3
    ISSN 1476-4687 ; 0028-0836
    ISSN (online) 1476-4687
    ISSN 0028-0836
    DOI 10.1038/s41586-021-03748-0
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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    Verfügbar in ZB MED Köln/Königswinter

    Zs.A 26: Hefte anzeigen Standort:
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    bis Jg. 1994: Bestellungen von Artikeln über das Online-Bestellformular
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    Zs.MG 9: Hefte anzeigen
    Zs.MO 244: Hefte anzeigen

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  7. Artikel ; Online: Evidence of Rotational Fröhlich Coupling in Polaronic Trions.

    Trushin, Maxim / Sarkar, Soumya / Mathew, Sinu / Goswami, Sreetosh / Sahoo, Prasana / Wang, Yan / Yang, Jieun / Li, Weiwei / MacManus-Driscoll, Judith L / Chhowalla, Manish / Adam, Shaffique / Venkatesan, T

    Physical review letters

    2020  Band 125, Heft 8, Seite(n) 86803

    Abstract: Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic ... ...

    Abstract Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS_{2} and the bulk transition metal oxide SrTiO_{3}. The low-temperature binding energy changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counterintuitive interplay between the rotational axis of the MoS_{2} trion and that of the SrTiO_{3} phonon mode.
    Sprache Englisch
    Erscheinungsdatum 2020-03-25
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ZDB-ID 208853-8
    ISSN 1079-7114 ; 0031-9007
    ISSN (online) 1079-7114
    ISSN 0031-9007
    DOI 10.1103/PhysRevLett.125.086803
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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    Verfügbar in ZB MED Bonn

    Z 4' 58/153: Hefte anzeigen

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  8. Artikel ; Online: Charge disproportionate molecular redox for discrete memristive and memcapacitive switching.

    Goswami, Sreetosh / Rath, Santi P / Thompson, Damien / Hedström, Svante / Annamalai, Meenakshi / Pramanick, Rajib / Ilic, B Robert / Sarkar, Soumya / Hooda, Sonu / Nijhuis, Christian A / Martin, Jens / Williams, R Stanley / Goswami, Sreebrata / Venkatesan, T

    Nature nanotechnology

    2020  Band 15, Heft 5, Seite(n) 380–389

    Abstract: Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, ... ...

    Abstract Electronic symmetry breaking by charge disproportionation results in multifaceted changes in the electronic, magnetic and optical properties of a material, triggering ferroelectricity, metal/insulator transition and colossal magnetoresistance. Yet, charge disproportionation lacks technological relevance because it occurs only under specific physical conditions of high or low temperature or high pressure. Here we demonstrate a voltage-triggered charge disproportionation in thin molecular films of a metal-organic complex occurring in ambient conditions. This provides a technologically relevant molecular route for simultaneous realization of a ternary memristor and a binary memcapacitor, scalable down to a device area of 60 nm
    Sprache Englisch
    Erscheinungsdatum 2020-03-23
    Erscheinungsland England
    Dokumenttyp Journal Article ; Research Support, Non-U.S. Gov't
    ZDB-ID 2254964-X
    ISSN 1748-3395 ; 1748-3387
    ISSN (online) 1748-3395
    ISSN 1748-3387
    DOI 10.1038/s41565-020-0653-1
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  9. Artikel: Size-selective Pt siderophores based on redox active azo-aromatic ligands.

    Sengupta, Debabrata / Goswami, Sreetosh / Banerjee, Rajdeep / Guberman-Pfeffer, Matthew J / Patra, Abhijeet / Dutta, Anirban / Pramanick, Rajib / Narasimhan, Shobhana / Pradhan, Narayan / Batista, Victor / Venkatesan, T / Goswami, Sreebrata

    Chemical science

    2020  Band 11, Heft 34, Seite(n) 9226–9236

    Abstract: We demonstrate a strategy inspired by natural siderophores for the dissolution of platinum nanoparticles that could enable their size-selective synthesis, toxicological assessment, and the recycling of this precious metal. From the fabrication of ... ...

    Abstract We demonstrate a strategy inspired by natural siderophores for the dissolution of platinum nanoparticles that could enable their size-selective synthesis, toxicological assessment, and the recycling of this precious metal. From the fabrication of electronics to biomedical diagnosis and therapy, PtNPs find increasing use. Mitigating concerns over potential human toxicity and the need to recover precious metal from industrial debris motivates the study of bio-friendly reagents to replace traditional harsh etchants. Herein, we report a family of redox-active siderophore-viz. π-acceptor azo aromatic ligands (L) that spontaneously ionize and chelate Pt atoms selectively from nanoparticles of size ≤6 nm. The reaction produces a monometallic diradical complex, Pt
    Sprache Englisch
    Erscheinungsdatum 2020-08-20
    Erscheinungsland England
    Dokumenttyp Journal Article
    ZDB-ID 2559110-1
    ISSN 2041-6539 ; 2041-6520
    ISSN (online) 2041-6539
    ISSN 2041-6520
    DOI 10.1039/d0sc02683b
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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  10. Artikel ; Online: Direct Bandgap-like Strong Photoluminescence from Twisted Multilayer MoS

    Sarkar, Soumya / Mathew, Sinu / Chintalapati, Sandhya / Rath, Ashutosh / Panahandeh-Fard, Majid / Saha, Surajit / Goswami, Sreetosh / Tan, Sherman Jun Rong / Loh, Kian Ping / Scott, Mary / Venkatesan, Thirumalai

    ACS nano

    2020  Band 14, Heft 12, Seite(n) 16761–16769

    Abstract: While direct bandgap monolayer 2D transition metal dichalcogenides (TMDs) have emerged as an important optoelectronic material due to strong light-matter interactions, their multilayer counterparts exhibit an indirect bandgap resulting in poor photon ... ...

    Abstract While direct bandgap monolayer 2D transition metal dichalcogenides (TMDs) have emerged as an important optoelectronic material due to strong light-matter interactions, their multilayer counterparts exhibit an indirect bandgap resulting in poor photon emission quantum yield. We report strong direct bandgap-like photoluminescence at ∼1.9 eV from multilayer MoS
    Sprache Englisch
    Erscheinungsdatum 2020-12-07
    Erscheinungsland United States
    Dokumenttyp Journal Article
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/acsnano.0c04801
    Datenquelle MEDical Literature Analysis and Retrieval System OnLINE

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