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  1. Article ; Online: Exploring the properties of theVB-defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation.

    Murzakhanov, Fadis F / Sadovnikova, Margarita A / Gracheva, Irina N / Mamin, Georgy V / Baibekov, Eduard I / Mokhov, Evgeniy N

    Nanotechnology

    2024  Volume 35, Issue 15

    Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique ...

    Abstract Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gapEg= 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value ofVB-spin polarization under optical pumping with
    Language English
    Publishing date 2024-01-25
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ad1940
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Book ; Online: Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

    Gracheva, Irina N. / Murzakhanov, Fadis F. / Mamin, Georgy V. / Sadovnikova, Margarita A. / Gabbasov, Bulat F. / Mokhov, Evgeniy N. / Gafurov, Marat R.

    2023  

    Abstract: The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boron ... ...

    Abstract The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in hexagonal boron nitride (hBN) potentially allow a transfer of this concept onto atomic thin layers due to the van der Waals nature of the defect host. Here, we experimentally explore all terms of the VB spin Hamiltonian reflecting interactions with the three nearest nitrogen atoms by means of conventional electron spin resonance and high frequency (94 GHz) electron-nuclear double resonance. We establish symmetry, anisotropy, and principal values of the corresponding hyperfine interaction (HFI) and nuclear quadrupole interaction (NQI). The HFI can be expressed in the axially symmetric form as Aperp = 45.5 MHz and Apar = 87 MHz, while the NQI is characterized by quadrupole coupling constant Cq = 1.96 MHz with slight rhombisity parameter n = (Pxx - Pyy)/Pzz = -0.070. Utilizing a conventional approach based on a linear combination of atomic orbitals and HFI values measured here, we reveal that almost all spin density (84 %) of the VB electron spin is localized on the three nearest nitrogen atoms. Our findings serve as valuable spectroscopic data and direct experimental demonstration of the VB spin localization in a single two dimensional BN layer.
    Keywords Condensed Matter - Materials Science
    Subject code 530
    Publishing date 2023-02-17
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  3. Book ; Online: Exploring the Properties of the V_B^- Defect in hBN

    Gracheva, Irina N. / Sadovnikova, Margarita A. / Murzakhanov, Fadis F. / Mamin, Georgy V. / Baibekov, Eduard I. / Mokhov, Evgeniy N.

    Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

    2023  

    Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with ... ...

    Abstract Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B^ - spin polarization under optical pumping with {\lambda}ext = 532 nm laser using high-frequency ({\nu}mw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P = 38.4 %. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 microseconds, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding spin properties of boron vacancy.
    Keywords Condensed Matter - Materials Science
    Subject code 530 ; 535
    Publishing date 2023-05-13
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  4. Article: Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines.

    Murzakhanov, Fadis F / Yavkin, Boris V / Mamin, Georgiy V / Orlinskii, Sergei B / Mumdzhi, Ivan E / Gracheva, Irina N / Gabbasov, Bulat F / Smirnov, Alexander N / Davydov, Valery Yu / Soltamov, Victor A

    Nanomaterials (Basel, Switzerland)

    2021  Volume 11, Issue 6

    Abstract: Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively ... ...

    Abstract Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB-). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB- centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of
    Language English
    Publishing date 2021-05-22
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2662255-5
    ISSN 2079-4991
    ISSN 2079-4991
    DOI 10.3390/nano11061373
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Book ; Online: Symmetry breaking in single crystal SrTiO$_3$ plates

    Gabbasov, Bulat F. / Gracheva, Irina N. / Rodionov, Alexander A. / Nikitin, Sergey I. / Zverev, Dmitry G. / Trepakov, Vladimir A. / Dejneka, Alexandr / Jastrabik, Lubomir / Yusupov, Roman V.

    EPR manifestations

    2020  

    Abstract: Electron paramagnetic resonance studies of the impurity Fe$^{3+}$ and Mn$^{4+}$ centers indicate that the symmetry of the crystal structure of millimeter-scale strontium titanate plates above 105 K lowers in the bulk from cubic to tetragonal, different ... ...

    Abstract Electron paramagnetic resonance studies of the impurity Fe$^{3+}$ and Mn$^{4+}$ centers indicate that the symmetry of the crystal structure of millimeter-scale strontium titanate plates above 105 K lowers in the bulk from cubic to tetragonal, different from that of the conventional low-temperature antiferrodistortive phase. It is shown that the effect does not originate from the residual stress; its magnitude (observed tetragonal distortion) and particular manifestations depend on plate orientation, surface quality and the geometry of a sample. Peculiarities of the observed phenomenon are presented and possible scenario of its realization is discussed.

    Comment: 14 pages, 4 figures
    Keywords Condensed Matter - Materials Science
    Publishing date 2020-08-04
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

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