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  1. Article ; Online: Room temperature synthesis of HfO

    Nandi, Sanjoy Kumar / Venkatachalam, Dinesh Kumar / Ruffell, Simon / England, Jonathan / Grande, Pedro Luis / Vos, Maarten / Elliman, Robert Glen

    Nanotechnology

    2018  Volume 29, Issue 42, Page(s) 425601

    Abstract: Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating high-quality ... ...

    Abstract Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating high-quality HfO
    Language English
    Publishing date 2018-08-01
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/aad756
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Book ; Online: Ion implantation in \b{eta}-Ga2O3

    Nikolskaya, Alena / Okulich, Evgenia / Korolev, Dmitry / Stepanov, Anton / Nikolichev, Dmitry / Mikhaylov, Alexey / Tetelbaum, David / Almaev, Aleksei / Bolzan, Charles Airton / Buaczik, Antônio Jr / Giulian, Raquel / Grande, Pedro Luis / Kumar, Ashok / Kumar, Mahesh / Gogova, Daniela

    physics and technology

    2021  

    Abstract: Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric ... ...

    Abstract Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.
    Keywords Condensed Matter - Materials Science
    Subject code 600
    Publishing date 2021-02-26
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  3. Article ; Online: Unraveling structural and compositional information in 3D FinFET electronic devices.

    Trombini, Henrique / Marmitt, Gabriel Guterres / Alencar, Igor / Baptista, Daniel Lorscheitter / Reboh, Shay / Mazen, Frédéric / Pinheiro, Rafael Bortolin / Sanchez, Dario Ferreira / Senna, Carlos Alberto / Archanjo, Bráulio Soares / Achete, Carlos Alberto / Grande, Pedro Luis

    Scientific reports

    2019  Volume 9, Issue 1, Page(s) 11629

    Abstract: Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full ... ...

    Abstract Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution. When ions are backscattered, their energy losses unfold the chemistry of the different 3D compounds present in the structure. The FinFET periodicity generates oscillatory features as a function of backscattered ion energy and, in fact, these features allow a complete description of the device dimensions. Additionally, each measurement is performed over more than thousand structures, being highly representative in a statistical meaning. Finally, independent measurements using electron microscopy corroborate the proposed methodology.
    Language English
    Publishing date 2019-08-12
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-019-48117-0
    Database MEDical Literature Analysis and Retrieval System OnLINE

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