Article ; Online: Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires.
ACS applied materials & interfaces
2023 Volume 15, Issue 25, Page(s) 30944–30955
Abstract: We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal-semiconductor-metal device structures. Using depth- and spatially resolved cathodoluminescence ... ...
| Abstract | We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal-semiconductor-metal device structures. Using depth- and spatially resolved cathodoluminescence spectroscopy (CLS) in situ to map the spatial distributions of local defect densities with increasing applied bias, we drive the reversible conversion of metal-ZnO contacts from rectifying to Ohmic and back. These results demonstrate how defect movements systematically determine Ohmic and Schottky barriers to ZnO nano- and microwires and how they can account for the widely reported instability in nanowire transport. Exceeding a characteristic threshold voltage, in situ CLS reveals a current-induced thermal runaway that drives the radial diffusion of defects toward the nanowire free surface, causing V |
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| Language | English |
| Publishing date | 2023-06-13 |
| Publishing country | United States |
| Document type | Journal Article |
| ISSN | 1944-8252 |
| ISSN (online) | 1944-8252 |
| DOI | 10.1021/acsami.3c02132 |
| Database | MEDical Literature Analysis and Retrieval System OnLINE |
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