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  1. Book ; Online: Velocity distributions of particles sputtered from supported 2D-MoS$_2$ during highly charged ion irradiation

    Skopinski, Lucia / Kretschmer, Silvan / Ernst, Philipp / Herder, Matthias / Madauß, Lukas / Breuer, Lars / Krasheninnikov, Arkady V. / Schleberger, Marika

    2022  

    Abstract: The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ... ...

    Abstract The interaction of highly charged ions (HCI) with solids leads to particle sputtering, which can be used for defect-mediated engineering of the properties of the material. Ions can store energy in the form of kinetic and potential energy (sum of the ionization energies) and transfer it to the solid upon impact. The interaction and sputtering mechanisms depend significantly on the projectile energies. However, the relevance of various interaction mechanisms is unknown. Here we show that for slow HCI (5 keV) the interaction mechanisms leading to particle emission by electronic excitation and transferred kinetic energy are independent from each other, which is consistent with our atomistic simulations. We have irradiated substrate supported (Au, SiO$_2$) monolayers of MoS$_2$ with highly charged xenon ions (charge state: 17$+$ - 40$+$), extracted the emitted neutral, post-ionized Mo particles into a time-of-flight mass spectrometer and determined their velocity distributions. We find two main contributions, one at high velocities and a second one at lower velocities, and assign them to kinetic and potential effects respectively. Our data suggests that the dominant mechanism for potential sputtering is related to electron-phonon coupling, while non-thermal processes play no significant role. We anticipate that our work will be a starting point for further experiments and simulations to determine whether the different processes resulting from E$_{pot}$ and E$_{kin}$ can be separated or whether synergistic effects play a role.

    Comment: 9 pages, 5 figures
    Keywords Condensed Matter - Materials Science
    Subject code 541
    Publishing date 2022-08-09
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  2. Article ; Online: Formation of neutral In(m)C(n) clusters under C60 ion bombardment of indium.

    Breuer, Lars / Kucher, Andrew / Herder, Matthias / Wucher, Andreas / Winograd, Nicholas

    The journal of physical chemistry. A

    2014  Volume 118, Issue 37, Page(s) 8542–8552

    Abstract: The formation of neutral gas phase indium carbide clusters under C60(+) ion bombardment of solid indium was investigated using laser based postionization prior to mass spectrometric detection. Two different postionization methods were used and shown to ... ...

    Abstract The formation of neutral gas phase indium carbide clusters under C60(+) ion bombardment of solid indium was investigated using laser based postionization prior to mass spectrometric detection. Two different postionization methods were used and shown to provide saturated photoionization efficiency, thereby delivering nearly the same information about the composition of the sputtered material. The resulting size distributions of neutral In(m)C(n) clusters are compared with those of the corresponding cationic secondary cluster ions and discussed in terms of calculated cluster properties. Investigating the dependence on C60(+) ion fluence, we demonstrate that clusters containing only one carbon atom are formed in single impact events, whereas the formation of more carbon-rich clusters results from carbon accumulation at the bombarded surface.
    Language English
    Publishing date 2014-09-18
    Publishing country United States
    Document type Journal Article
    ISSN 1520-5215
    ISSN (online) 1520-5215
    DOI 10.1021/jp5024247
    Database MEDical Literature Analysis and Retrieval System OnLINE

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