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  1. Article ; Online: Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor.

    Huang, Chi-Hsin / Zhang, Yong / Nomura, Kenji

    ACS applied materials & interfaces

    2022  Volume 14, Issue 19, Page(s) 22252–22262

    Abstract: A gate-tunable synaptic device controlling dynamically reconfigurable excitatory and inhibitory synaptic responses, which can emulate the fundamental synaptic responses for developing diverse functionalities of the biological nervous system, was ... ...

    Abstract A gate-tunable synaptic device controlling dynamically reconfigurable excitatory and inhibitory synaptic responses, which can emulate the fundamental synaptic responses for developing diverse functionalities of the biological nervous system, was developed using ambipolar oxide semiconductor thin-film transistors (TFTs). Since the balanced ambipolarity is significant, a boron-incorporated SnO (SnO:B) oxide semiconductor channel was newly developed to improve the ambipolar charge transports by reducing the subgap defect density, which was reduced to less than 10
    MeSH term(s) Artificial Intelligence ; Oxides ; Reproducibility of Results ; Semiconductors ; Synapses/physiology
    Chemical Substances Oxides
    Language English
    Publishing date 2022-05-06
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c24327
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Vacuum-Free Liquid-Metal-Printed 2D Indium-Tin Oxide Thin-Film Transistor for Oxide Inverters.

    Tang, Yalun / Huang, Chi-Hsin / Nomura, Kenji

    ACS nano

    2022  Volume 16, Issue 2, Page(s) 3280–3289

    Abstract: A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an ... ...

    Abstract A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an electron density of ∼1.2 × 10
    Language English
    Publishing date 2022-02-04
    Publishing country United States
    Document type Journal Article
    ISSN 1936-086X
    ISSN (online) 1936-086X
    DOI 10.1021/acsnano.1c11205
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article: Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

    Huang, Chi-Hsin / Tang, Yalun / Yang, Tzu-Yi / Chueh, Yu-Lun / Nomura, Kenji

    ACS applied materials & interfaces. 2021 Nov. 01, v. 13, no. 44

    2021  

    Abstract: Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, ... ...

    Abstract Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm² V–¹ s–¹, a high on/off current ratio of ∼10⁶, low off current of <10–¹² A, and a subthreshold swing of ∼2.5 V decade–¹, which was improved compared with the conventional p-channel SnO TFTs. We also fabricated metal-liquid printing-based n-channel oxide TFTs such as n-channel SnO₂ and In₂O₃-TFTs and developed ultrathin-channel oxide-TFT-based low-power complementary inverter circuits with the developed p-channel SnO TFTs. The full swing of voltage-transfer characteristics with a voltage gain of ∼10 and a power dissipation of <4 nW for p-SnO/n-SnO₂ and ∼120 and <2 nW for p-SnO/n-In₂O₃-CMOS inverters were successfully demonstrated.
    Keywords cost effectiveness ; electric potential difference ; electronics ; energy efficiency ; tin ; tin monoxide ; transistors
    Language English
    Dates of publication 2021-1101
    Size p. 52783-52792.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.1c15990
    Database NAL-Catalogue (AGRICOLA)

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  4. Article ; Online: Back-Channel Defect Termination by Sulfur for p-Channel Cu

    Chang, Hsuan / Huang, Chi-Hsin / Matsuzaki, Kosuke / Nomura, Kenji

    ACS applied materials & interfaces

    2020  Volume 12, Issue 46, Page(s) 51581–51588

    Abstract: The absence of a high-performance p-channel oxide thin-film transistor (TFT) is the major challenge faced in the current oxide semiconductor device technology. Simple solution-based back-channel subgap defect termination using sulfur was developed for p- ... ...

    Abstract The absence of a high-performance p-channel oxide thin-film transistor (TFT) is the major challenge faced in the current oxide semiconductor device technology. Simple solution-based back-channel subgap defect termination using sulfur was developed for p-channel cuprous oxide (Cu
    Language English
    Publishing date 2020-11-04
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c11534
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Artificial Synapse Based on a 2D-SnO

    Huang, Chi-Hsin / Chang, Hsuan / Yang, Tzu-Yi / Wang, Yi-Chung / Chueh, Yu-Lun / Nomura, Kenji

    ACS applied materials & interfaces

    2021  Volume 13, Issue 44, Page(s) 52822–52832

    Abstract: A new type of two-dimensional (2D) ... ...

    Abstract A new type of two-dimensional (2D) SnO
    Language English
    Publishing date 2021-10-29
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c18329
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  6. Article ; Online: Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter.

    Huang, Chi-Hsin / Tang, Yalun / Yang, Tzu-Yi / Chueh, Yu-Lun / Nomura, Kenji

    ACS applied materials & interfaces

    2021  Volume 13, Issue 44, Page(s) 52783–52792

    Abstract: Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, ... ...

    Abstract Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm
    Language English
    Publishing date 2021-11-01
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c15990
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    Kategorien

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  7. Article: Artificial Synapse Based on a 2D-SnO₂ Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

    Huang, Chi-Hsin / Chang, Hsuan / Yang, Tzu-Yi / Wang, Yi-Chung / Chueh, Yu-Lun / Nomura, Kenji

    ACS applied materials & interfaces. 2021 Oct. 29, v. 13, no. 44

    2021  

    Abstract: A new type of two-dimensional (2D) SnO₂ semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The ... ...

    Abstract A new type of two-dimensional (2D) SnO₂ semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO₂ memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gate-tunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.
    Keywords liquids ; synapse ; transistors
    Language English
    Dates of publication 2021-1029
    Size p. 52822-52832.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.1c18329
    Database NAL-Catalogue (AGRICOLA)

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  8. Article ; Online: Experimental demonstration of single-mode topological valley-Hall lasing at telecommunication wavelength controlled by the degree of asymmetry.

    Noh, Wanwoo / Nasari, Hadiseh / Kim, Hwi-Min / Le-Van, Quynh / Jia, Zhetao / Huang, Chi-Hsin / Kanté, Boubacar

    Optics letters

    2020  Volume 45, Issue 15, Page(s) 4108–4111

    Abstract: Topology plays a fundamental role in contemporary physics and enables new information processing schemes and wave device physics with built-in robustness. However, the creation of photonic topological phases usually requires complex geometries that limit ...

    Abstract Topology plays a fundamental role in contemporary physics and enables new information processing schemes and wave device physics with built-in robustness. However, the creation of photonic topological phases usually requires complex geometries that limit the prospect for miniaturization and integration and dispossess designers of additional degrees of freedom needed to control topological modes on-chip. By controlling the degree of asymmetry (DoA) in a photonic crystal with broken inversion symmetry, we report single-mode lasing of valley-Hall ring cavities at telecommunication wavelength. The DoA governs four photon confinement regimes at the interface of topologically distinct valley-Hall domains and evidences an interplay between the width of the topological bandgap and the quality factor of ring-like modes for single-mode operation. Our results open the door to novel optoelectronic devices and systems based on compact topological integrated circuits.
    Language English
    Publishing date 2020-07-31
    Publishing country United States
    Document type Journal Article
    ISSN 1539-4794
    ISSN (online) 1539-4794
    DOI 10.1364/OL.399053
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  9. Article ; Online: Resistive switching of Sn-doped In

    Huang, Chi-Hsin / Chang, Wen-Chih / Huang, Jian-Shiou / Lin, Shih-Ming / Chueh, Yu-Lun

    Nanoscale

    2017  Volume 9, Issue 20, Page(s) 6920–6928

    Abstract: Core-shell NWs offer an innovative approach to achieve nanoscale metal-insulator-metal (MIM) heterostructures along the wire radial direction, realizing three-dimensional geometry architecture rather than planar type thin film devices. This work ... ...

    Abstract Core-shell NWs offer an innovative approach to achieve nanoscale metal-insulator-metal (MIM) heterostructures along the wire radial direction, realizing three-dimensional geometry architecture rather than planar type thin film devices. This work demonstrated the tunable resistive switching characteristics of ITO/HfO
    Language English
    Publishing date 2017-05-25
    Publishing country England
    Document type Journal Article
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/c6nr09564j
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Self-Selecting Resistive Switching Scheme Using TiO

    Huang, Chi-Hsin / Chou, Ta-Shun / Huang, Jian-Shiou / Lin, Shih-Ming / Chueh, Yu-Lun

    Scientific reports

    2017  Volume 7, Issue 1, Page(s) 2066

    Abstract: In this study, the resistive switching scheme using ... ...

    Abstract In this study, the resistive switching scheme using TiO
    Language English
    Publishing date 2017-05-18
    Publishing country England
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-017-01354-7
    Database MEDical Literature Analysis and Retrieval System OnLINE

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