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  1. Article ; Online: Selective isotropic etching of SiO

    Gil, Hong Seong / Kim, Doo San / Jang, Yun Jong / Kim, Dea Whan / Kwon, Hea In / Kim, Gyoung Chan / Kim, Dong Woo / Yeom, Geun Young

    Scientific reports

    2023  Volume 13, Issue 1, Page(s) 11599

    Abstract: In this study, an isotropic etching process of ... ...

    Abstract In this study, an isotropic etching process of SiO
    Language English
    Publishing date 2023-07-18
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-023-38359-4
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Atomic layer etching of Sn by surface modification with H and Cl radicals.

    Kim, Doo San / Jang, Yun Jong / Kim, Ye Eun / Gil, Hong Seong / Jeong, Byeong Hwa / Yeom, Geun Young

    Nanotechnology

    2022  Volume 34, Issue 3

    Abstract: Sn is the one of the materials that can be used for next generation extreme ultraviolet (EUV) mask material having a high absorption coefficient and, for the fabrication of the next generation EUV mask, a precise etching of Sn is required. In this study, ...

    Abstract Sn is the one of the materials that can be used for next generation extreme ultraviolet (EUV) mask material having a high absorption coefficient and, for the fabrication of the next generation EUV mask, a precise etching of Sn is required. In this study, the atomic layer etching (ALE) process was performed for the precise etch thickness control and low damage etching of Sn by the formation SnH
    Language English
    Publishing date 2022-11-04
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ac9981
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Plasma functional polymerization of dopamine using atmospheric pressure plasma and a dopamine solution mist.

    Mun, Mu Kyeom / Jang, Yun Jong / Kim, Ju Eun / Yeom, Geun Young / Kim, Dong Woo

    RSC advances

    2019  Volume 9, Issue 23, Page(s) 12814–12822

    Abstract: By using DBD-type atmospheric pressure plasmas and a dopamine solution mist formed by a piezoelectric module, the possibility of depositing functional polymer films showing the physical and chemical characteristics of polydopamine without breaking the ... ...

    Abstract By using DBD-type atmospheric pressure plasmas and a dopamine solution mist formed by a piezoelectric module, the possibility of depositing functional polymer films showing the physical and chemical characteristics of polydopamine without breaking the functional group of the dopamine has been investigated for different plasma voltages. The higher DBD voltages up to 3.0 kV decreased the functional groups such as catechol and amine (N/C ratio) relative to dopamine in the deposited polymer by increasing the dissociation of dopamine into atoms and small molecules due to higher electron energies. In contrast, the lower DBD voltages up to 1.5 kV increased the functional group and N/C ratio of dopamine in the deposited polymer by keeping the molecular structures of the dopamine due to lower electron energies. Therefore, the polymer deposited at the lower DBD voltages showed lower contact angles and higher metal absorption properties which are some of the surface modification characteristics of polydopamine. When the metal absorption properties of the polydopamine-like film deposited using the atmospheric pressure plasma of a low DBD voltage with a dopamine solution mist were compared with other metal absorbers for Cu, As, and Cr, the polydopamine-like film exhibited superior metal absorption properties. It is believed that this atmospheric pressure plasma process can be also applied to the plasma polymerization of other monomers without breaking the functional groups of the monomers.
    Language English
    Publishing date 2019-04-25
    Publishing country England
    Document type Journal Article
    ISSN 2046-2069
    ISSN (online) 2046-2069
    DOI 10.1039/c8ra10391g
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article: Plasma functional polymerization of dopamine using atmospheric pressure plasma and a dopamine solution mist

    Mun, Mu Kyeom / Jang, Yun Jong / Kim, Ju Eun / Yeom, Geun Young / Kim, Dong Woo

    RSC advances. 2019 Apr. 25, v. 9, no. 23

    2019  

    Abstract: By using DBD-type atmospheric pressure plasmas and a dopamine solution mist formed by a piezoelectric module, the possibility of depositing functional polymer films showing the physical and chemical characteristics of polydopamine without breaking the ... ...

    Abstract By using DBD-type atmospheric pressure plasmas and a dopamine solution mist formed by a piezoelectric module, the possibility of depositing functional polymer films showing the physical and chemical characteristics of polydopamine without breaking the functional group of the dopamine has been investigated for different plasma voltages. The higher DBD voltages up to 3.0 kV decreased the functional groups such as catechol and amine (N/C ratio) relative to dopamine in the deposited polymer by increasing the dissociation of dopamine into atoms and small molecules due to higher electron energies. In contrast, the lower DBD voltages up to 1.5 kV increased the functional group and N/C ratio of dopamine in the deposited polymer by keeping the molecular structures of the dopamine due to lower electron energies. Therefore, the polymer deposited at the lower DBD voltages showed lower contact angles and higher metal absorption properties which are some of the surface modification characteristics of polydopamine. When the metal absorption properties of the polydopamine-like film deposited using the atmospheric pressure plasma of a low DBD voltage with a dopamine solution mist were compared with other metal absorbers for Cu, As, and Cr, the polydopamine-like film exhibited superior metal absorption properties. It is believed that this atmospheric pressure plasma process can be also applied to the plasma polymerization of other monomers without breaking the functional groups of the monomers.
    Keywords absorption ; arsenic ; atmospheric pressure ; catechol ; chromium ; contact angle ; copper ; dissociation ; dopamine ; electric potential difference ; films (materials) ; mists ; moieties ; physicochemical properties ; polymerization ; polymers
    Language English
    Dates of publication 2019-0425
    Size p. 12814-12822.
    Publishing place The Royal Society of Chemistry
    Document type Article
    ISSN 2046-2069
    DOI 10.1039/c8ra10391g
    Database NAL-Catalogue (AGRICOLA)

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  5. Article: Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories

    Kim, Doo San / Kim, Ju Eun / Gill, You Jung / Park, Jin Woo / Jang, Yun Jong / Kim, Ye Eun / Choi, Hyejin / Kwon, Oik / Yeom, Geun Young

    RSC advances. 2020 Oct. 01, v. 10, no. 59

    2020  

    Abstract: Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching via hydrogen-based gases such as H₂, CH₄, NH₃, CH₄ + H₂, and CH₄ + NH₃. ... ...

    Abstract Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge–As–Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching via hydrogen-based gases such as H₂, CH₄, NH₃, CH₄ + H₂, and CH₄ + NH₃. Among the investigated hydrogen-based gases, NH₃ showed the highest etching rate of about 0.52 nm s⁻¹, but the formation of nitride compounds and the increased roughness were observed on the OTS surface by nitrogen. The use of other hydrogen-based gases such as CH₄ and CH₄ + H₂ showed the deposition and low OTS etch rate, respectively, due to the presence of carbon in CH₄. Even though H₂ showed the better etch characteristics due to the no surface residues or compounds on the OTS surface related to carbon or nitrogen in the etch gases, the best OTS etch characteristics such as the second highest etch rate of 0.45 nm s⁻¹, the lowest surface roughness of 0.21 nm, and no surface residues or compounds were observed with CH₄ + NH₃ due to the removal of carbon and nitrogen on the surface by the formation of volatile CN compounds while maintaining a high hydrogen atomic concentration in the plasma.
    Keywords carbon ; computer hardware ; gases ; hydrogen ; materials ; memory ; nitrides ; nitrogen ; phase transition ; roughness ; surface roughness
    Language English
    Dates of publication 2020-1001
    Size p. 36141-36146.
    Publishing place The Royal Society of Chemistry
    Document type Article
    Note NAL-light
    ISSN 2046-2069
    DOI 10.1039/d0ra05321j
    Database NAL-Catalogue (AGRICOLA)

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  6. Article ; Online: Etch characteristics of magnetic tunnel junction materials using H

    Kim, Ju Eun / Kim, Doo San / Gill, You Jung / Jang, Yun Jong / Kim, Ye Eun / Cho, Hanna / Won, Bok-Yeon / Kwon, Oik / Yoon, Kukhan / Choi, Jin-Young / Park, Jea-Gun / Yeom, Geun Young

    Nanotechnology

    2021  Volume 32, Issue 5, Page(s) 55301

    Abstract: Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using ... ...

    Abstract Magnetic tunneling junction (MTJ) materials such as CoFeB, Co, Pt, MgO, and the hard mask material such as W and TiN were etched with a reactive ion beam etching (RIBE) system using H
    Language English
    Publishing date 2021-01-01
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/abb04e
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article ; Online: Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories.

    Kim, Doo San / Kim, Ju Eun / Gill, You Jung / Park, Jin Woo / Jang, Yun Jong / Kim, Ye Eun / Choi, Hyejin / Kwon, Oik / Yeom, Geun Young

    RSC advances

    2020  Volume 10, Issue 59, Page(s) 36141–36146

    Abstract: Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge-As-Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion ... ...

    Abstract Etch characteristics of ovonic threshold switch (OTS) materials composed of Ge-As-Te for a phase-change random access memory (PCRAM) has been investigated using reactive ion etching
    Language English
    Publishing date 2020-10-01
    Publishing country England
    Document type Journal Article
    ISSN 2046-2069
    ISSN (online) 2046-2069
    DOI 10.1039/d0ra05321j
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

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