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  1. Article ; Online: Tailored Band Alignment for Improved Carrier Transport in Composition-Controlled Sb

    Lim, Geumha / Park, Ha Kyung / Wang, Yazi / Ji, Seung Hwan / Shin, Byungha / Jo, William

    The journal of physical chemistry letters

    2024  Volume 15, Issue 10, Page(s) 2825–2833

    Abstract: ... ...

    Abstract Sb
    Language English
    Publishing date 2024-03-05
    Publishing country United States
    Document type Journal Article
    ISSN 1948-7185
    ISSN (online) 1948-7185
    DOI 10.1021/acs.jpclett.4c00257
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Halide perovskite single crystals: growth, characterization, and stability for optoelectronic applications.

    Cho, Yunae / Jung, Hye Ri / Jo, William

    Nanoscale

    2022  Volume 14, Issue 26, Page(s) 9248–9277

    Abstract: Recently, metal halide perovskite materials have received significant attention as promising candidates for optoelectronic applications with tremendous achievements, owing to their outstanding optoelectronic properties and facile solution-processed ... ...

    Abstract Recently, metal halide perovskite materials have received significant attention as promising candidates for optoelectronic applications with tremendous achievements, owing to their outstanding optoelectronic properties and facile solution-processed fabrication. However, the existence of a large number of grain boundaries in perovskite polycrystalline thin films causes ion migration, surface defects, and instability, which are detrimental to device applications. Compared with their polycrystalline counterparts, perovskite single crystals have been explored to realize stable and excellent properties such as a long diffusion length and low trap density. The development of growth techniques and physicochemical characterizations led to the widespread implementation of perovskite single-crystal structures in optoelectronic applications. In this review, recent progress in the growth techniques of perovskite single crystals, including advanced crystallization methods, is summarized. Additionally, their optoelectronic characterizations are elucidated along with a detailed analysis of their optical properties, carrier transport mechanisms, defect densities, surface morphologies, and stability issues. Furthermore, the promising applications of perovskite single crystals in solar cells, photodetectors, light-emitting diodes, lasers, and flexible devices are discussed. The development of suitable growth and characterization techniques contributes to the fundamental investigation of these materials and aids in the construction of highly efficient optoelectronic devices based on halide perovskite single crystals.
    Language English
    Publishing date 2022-07-07
    Publishing country England
    Document type Journal Article ; Review
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/d2nr00513a
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Improvement of Open-Circuit Voltage Deficit via Pre-Treated NH

    Kim, Jihyun / Park, Joonho / Kim, Yong-Hoon / Jo, William

    Small (Weinheim an der Bergstrasse, Germany)

    2022  Volume 18, Issue 44, Page(s) e2204173

    Abstract: Passivation is a popular method to increase power conversion efficiency (PCE), reduce hysteresis related to surface traps and defects, and adjust mismatched energy levels. In this paper, an approach is reported using ammonium chloride (AC) to enhance ... ...

    Abstract Passivation is a popular method to increase power conversion efficiency (PCE), reduce hysteresis related to surface traps and defects, and adjust mismatched energy levels. In this paper, an approach is reported using ammonium chloride (AC) to enhance passivation effects by controlling chlorine (Cl) and ammonium ions (NH
    Language English
    Publishing date 2022-09-26
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 2168935-0
    ISSN 1613-6829 ; 1613-6810
    ISSN (online) 1613-6829
    ISSN 1613-6810
    DOI 10.1002/smll.202204173
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Understanding the Space-Charge Layer in SnO

    Youn, Sarah Su-O / Kim, Jihyun / Na, Junhong / Jo, William / Kim, Gee Yeong

    ACS applied materials & interfaces

    2022  Volume 14, Issue 42, Page(s) 48229–48239

    Abstract: Tin oxide ( ... ...

    Abstract Tin oxide (SnO
    Language English
    Publishing date 2022-10-12
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c12461
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO

    Kim, Yeon Soo / Chung, Harry / Kwon, Suhyoun / Kim, Jihyun / Jo, William

    Nano convergence

    2022  Volume 9, Issue 1, Page(s) 43

    Abstract: Flexible electronics has attracted considerable attention owing to its enormous potential for practical applications in various fields. However, the massive strain produced during bending degrades the device. Especially at grain boundaries, due to the ... ...

    Abstract Flexible electronics has attracted considerable attention owing to its enormous potential for practical applications in various fields. However, the massive strain produced during bending degrades the device. Especially at grain boundaries, due to the accumulation of defects, this degradation is exacerbated in flexible electronic devices. The importance of electrically inactivated grain boundaries increases as devices scale down to the nanoscale. Here, we propose an HfO
    Language English
    Publishing date 2022-09-30
    Publishing country England
    Document type Journal Article
    ZDB-ID 2760386-6
    ISSN 2196-5404 ; 2196-5404
    ISSN (online) 2196-5404
    ISSN 2196-5404
    DOI 10.1186/s40580-022-00336-4
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article: Reconfigurable Dipole-Induced Resistive Switching of MoS2 Thin Layers on Nb:SrTiO3

    Yoon, Woo Young / Jin, Hye-Jin / Jo, William

    ACS applied materials & interfaces. 2019 Nov. 13, v. 11, no. 49

    2019  

    Abstract: The controllable band gap and charge-trapping capability of MoS2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb: ... ...

    Abstract The controllable band gap and charge-trapping capability of MoS2 render it suitable for use in the fabrication of various electrical devices with high-k dielectric oxides. In this study, we investigated reconfigurable resistance states in a MoS2/Nb:SrTiO3 heterostructure by using conductive atomic force microscopy. Low-resistance and high-resistance states were observed in all MoS2 because of barrier height modification resulting from redistribution of charge and oxygen vacancies in the vicinity of interfaces. In a thin layer of the MoS2 film, the carrier density was high, and layer-dependent transport properties appeared because of the charge separation in MoS2. The hysteresis and switching voltage of the MoS2/Nb:SrTiO3 heterostructure could be varied by controlling the number of layers of MoS2.
    Keywords atomic force microscopy ; electric potential difference ; hysteresis ; molybdenum disulfide ; oxides ; oxygen
    Language English
    Dates of publication 2019-1113
    Size p. 46344-46349.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.9b15097
    Database NAL-Catalogue (AGRICOLA)

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  7. Article: Tailored Band Structure of Cu(In,Ga)Se₂ Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function

    Park, Ha Kyung / Cho, Yunae / Kim, Kihwan / Jeong, Inyoung / Gwak, Jihye / Yun, Jae Ho / Jo, William

    ACS applied materials & interfaces. 2022 July 20, v. 14, no. 30

    2022  

    Abstract: An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu(In,Ga)Se₂ (CIGS) solar cells, because of their great sensitivities to not only the interface but also the film bulk. Conventional methods ...

    Abstract An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu(In,Ga)Se₂ (CIGS) solar cells, because of their great sensitivities to not only the interface but also the film bulk. Conventional methods to investigate the outcoming carriers and their transport properties measure the current and voltage either under illumination or dark conditions. However, the evaluation of current and voltage changes along the cross-section of the devices presents several limitations. To mitigate this shortcoming, we prepared gently etched devices and analyzed their properties using micro-Raman scattering spectroscopy, Kelvin probe force microscopy, and photoluminescence measurements. The atomic distributions and microstructures of the devices were investigated, and the defect densities in the device bulk were determined via admittance spectroscopy. The effects of Ga grading on the charge transport at the CIGS–CdS interface were categorized into various types of band offsets, which were directly confirmed by our experiments. The results indicated that reducing open-circuit voltage loss is crucial for obtaining a higher power conversion efficiency. Although the large Ga grading in the CIGS absorber induced higher defect levels, it effectuated a smaller open-circuit voltage loss because of carrier transport enhancement at the absorber–buffer interface, resulting from the optimized conduction band offsets.
    Keywords atomic force microscopy ; electric potential difference ; lighting ; photoluminescence ; spectroscopy
    Language English
    Dates of publication 2022-0720
    Size p. 34697-34705.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c07166
    Database NAL-Catalogue (AGRICOLA)

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  8. Article ; Online: Reconfigurable Dipole-Induced Resistive Switching of MoS

    Yoon, Woo Young / Jin, Hye-Jin / Jo, William

    ACS applied materials & interfaces

    2019  Volume 11, Issue 49, Page(s) 46344–46349

    Abstract: The controllable band gap and charge-trapping capability of ... ...

    Abstract The controllable band gap and charge-trapping capability of MoS
    Language English
    Publishing date 2019-11-25
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.9b15097
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  9. Article ; Online: Virtual Out-of-Plane Piezoelectric Response in MoS

    Jin, Hye-Jin / Yoon, Woo Young / Jo, William

    ACS applied materials & interfaces

    2018  Volume 10, Issue 1, Page(s) 1334–1339

    Abstract: ... The ... ...

    Abstract The MoS
    Language English
    Publishing date 2018-01-10
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.7b14001
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Tailored Band Structure of Cu(In,Ga)Se

    Park, Ha Kyung / Cho, Yunae / Kim, Kihwan / Jeong, Inyoung / Gwak, Jihye / Yun, Jae Ho / Jo, William

    ACS applied materials & interfaces

    2022  Volume 14, Issue 30, Page(s) 34697–34705

    Abstract: An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu(In,Ga) ... ...

    Abstract An efficient carrier transport is essential for enhancing the performance of thin-film solar cells, in particular Cu(In,Ga)Se
    Language English
    Publishing date 2022-07-20
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c07166
    Database MEDical Literature Analysis and Retrieval System OnLINE

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