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  1. Book ; Online ; Thesis: Infrared imaging techniques for crystalline silicon solar cell characterization and production control

    Kasemann, Martin

    what photons tell us about solar cells

    2010  

    Title variant Infrarot-Imaging Methoden zur Charakterisierung und Produktionskontrolle kristalliner Silicium-Solarzellen
    Author's details vorgelegt von Martin Kasemann
    Language English
    Size Online-Ressource
    Document type Book ; Online ; Thesis
    Thesis / German Habilitation thesis Univ., Diss.--Freiburg i. Br., 2010
    Database Library catalogue of the German National Library of Science and Technology (TIB), Hannover

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  2. Book ; Thesis: Einfluß einer mikrowelleninduzierten Plasmapolymerisation auf die Funktionseigenschaften technischer Textilien aus Polyethylenterephthalat

    Käsemann, Martin

    (Dissertationen aus dem Deutschen Wollforschungsinstitut an der RWTH-Aachen e.V. ; 4)

    1999  

    Author's details von Martin Käsemann
    Series title Dissertationen aus dem Deutschen Wollforschungsinstitut an der RWTH-Aachen e.V. ; 4
    Keywords Polyethylenterephthalate ; Verbundverhalten ; Stoffeigenschaft ; Technische Textilien ; Beschichten ; Plasmapolymerisation ; Beschichtung ; Ethylen ; Mikrowellenplasma ; Hexamethyldisiloxan
    Language German
    Size X, 182 S, Ill., graph. Darst, 21 cm
    Edition 1. Aufl
    Publisher Mainz
    Publishing place Aachen
    Document type Book ; Thesis
    Thesis / German Habilitation thesis Techn. Hochsch., Diss.--Aachen, 1999
    ISBN 3896537040 ; 9783896537041
    Database Library catalogue of the German National Library of Science and Technology (TIB), Hannover

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  3. Book ; Thesis: Messung des Parameters '/ [epsilon epsilon] der direkten CP-Verletzung im K0-K0-System [K-K-System]

    Kasemann, Matthias

    1988  

    Author's details von Matthias Kasemann
    Language German
    Size VI, 133 S, graph. Darst
    Document type Book ; Thesis
    Thesis / German Habilitation thesis Univ., Diss.--Mainz, 1988
    Database Former special subject collection: coastal and deep sea fishing

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  4. Book ; Thesis: Messung des Parameters [epsilon]'/[epsilon] der direkten CP-Verletzung im K 0 -K̄ 0 -System

    Kasemann, Matthias

    1988  

    Author's details Matthias Kasemann
    Language German
    Size VI, 134 S, graph. Darst
    Document type Book ; Thesis
    Thesis / German Habilitation thesis Univ., Diss.--Mainz, 1988
    Database Library catalogue of the German National Library of Science and Technology (TIB), Hannover

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  5. Article ; Online: Contact fault characterisation of complex silicon solar cells

    Padilla, Milan / Reichel, Christian / Hagedorn, N. / Fell, Andreas / Keding, Roman / Michl, Bernhard / Kasemann, Martin / Warta, Wilhelm / Schubert, Martin C.

    A guideline based on current voltage characteristics and luminescence imaging

    2016  

    Abstract: S.326-339 ... Highest efficiency solar cells in industrial and R&D environments are increasingly sensitive to local performance limiting processing faults, which are best characterised by spatially resolved characterisation techniques. This work contains a ...

    Abstract S.326-339

    Highest efficiency solar cells in industrial and R&D environments are increasingly sensitive to local performance limiting processing faults, which are best characterised by spatially resolved characterisation techniques. This work contains a discussion on the processing faults related to contact resistance and finger interruptions in interdigitated back contact silicon solar cells, which are prime example for a complex cell structure. Using experimental and simulated current-voltage measurements and luminescence images, we explore the strongly non-linear effect of poor local contact resistances on the global series resistance, fill factor, short circuit current density and efficiency. A good agreement between global and spatially resolved characterisation of faults is found, and potential artefacts are discussed. In conclusion, we present seven cases of contacting faults in interdigitated back contact cells with distinct characteristics that can be identified using a flow chart of experiments. The resulting guideline should assist silicon solar cell manufacturers in localising and quantifying local contacting faults that reduce the cells efficiency in manufacturing of complex solar cells.

    24

    Nr.3
    Keywords Solarzellen - Entwicklung und Charakterisierung ; Silicium-Photovoltaik ; Herstellung und Analyse von hocheffizienten Solarzellen ; resistance ; luminescence ; silicon ; cells ; 621
    Subject code 621
    Language English
    Publishing country de
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  6. Conference proceedings ; Online: Characterizing local contact resistances of interdigitated back contact silicon solar cells

    Padilla, M. / Michl, B. / Reichel, C. / Hagedorn, N. / Kluska, S. / Haag, S. / Keding, R. / Fell, A. / Kasemann, M. / Warta, W. / Schubert, M.C.

    Fraunhofer ISE

    2014  

    Abstract: Next generation high efficiency interdigitated back contact (IBC) silicon solar cells are often designed with complex doping and contacting structures that are sensitive to series resistance induced losses. Particularly local contact resistance problems ... ...

    Abstract Next generation high efficiency interdigitated back contact (IBC) silicon solar cells are often designed with complex doping and contacting structures that are sensitive to series resistance induced losses. Particularly local contact resistance problems present a major fill factor loss in industrially feasible solar cell designs. In this work, we use advanced two dimensional device simulations to understand the impact of globally and locally deteriorated electron and hole contacts on a typical IBC design. For a set of examples, the effect of an increased contact resistance on the global current voltage characteristic is compared to the signature of a simulated local series resistance image using luminescence imaging. Consistent interpretations and quantitative agreement between global and local analysis are shown. We find that the local series resistance of IBC cells react identically for globally altered electron and hole contact resistances. However, locally deteriorated electron and hole contact resistances do not impact fill factor losses identically. Together with qualitative interpretation of luminescence images, these findings present valuable information for IBC cell manufacturers for understanding their cell design's sensitivity to local contact resistance or broken finger problems on fill factor and short-circuit current.
    Keywords Solarzellen - Entwicklung und Charakterisierung ; Silicium-Photovoltaik ; Herstellung und Analyse von hocheffizienten Solarzellen ; doping ; silicon ; n-type ; resistivity ; VGF
    Subject code 621
    Language English
    Publishing country de
    Document type Conference proceedings ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  7. Article ; Online: Local Series Resistance Imaging of Silicon Solar Cells with Complex Current Paths

    Padilla, Milan / Michl, Bernhard / Hagedorn, N. / Reichel, Christian / Kluska, Sven / Fell, Andreas / Kasemann, Martin / Warta, Wilhelm / Schubert, Martin C.

    2015  

    Abstract: S.752-758 ... Next-generation highest efficiency silicon solar cells are often designed with elaborate doping and contacting structures that are sensitive to series-resistance-induced losses. Such structures exhibit complex asymmetric current paths, which ... ...

    Abstract S.752-758

    Next-generation highest efficiency silicon solar cells are often designed with elaborate doping and contacting structures that are sensitive to series-resistance-induced losses. Such structures exhibit complex asymmetric current paths, which present conceptual and technical challenges for spatially resolved characterization, which have thus far not been addressed and discussed. We show how series resistance imaging by luminescence can be adapted and interpreted for such complex devices using interdigitated back-contact solar cells as a prime example. Experiments that are supported by simulations for several cell geometries and base materials show that global series resistance and, thus, fill factor (FF) is governed by both electron and hole transport as a function of the resistances along their different current paths. A conductive boundary-based simulation environment for current-voltage (I-V) curves and luminescence images is used to further explain current transport physics and parameter correlations. Agreement within +/- 30% between series resistance derived from arithmetically averaged local values and conventional global measurements is achieved. The developed 2-D/3-D luminescence-experiment simulation environment opens the path for future accurate comparisons between other local and global characterization methods. Thus, we enable quantitative analysis of local series resistance phenomena induced by design or by production defects for complex silicon solar cells.

    5

    Nr.3
    Keywords Solarzellen - Entwicklung und Charakterisierung ; Silicium-Photovoltaik ; Herstellung und Analyse von hocheffizienten Solarzellen ; IBC ; luminescence ; resistance ; silicon ; cells
    Subject code 621
    Language English
    Publishing country de
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  8. Article ; Online: Physical understanding of the behavior of silver thick-film contacts on n-type silicon under annealing conditions

    Kontermann, Stefan / Hörteis, Matthias / Kasemann, Martin / Grohe, A. / Preu, Ralf / Pink, E. / Trupke, Thorsten

    2009  

    Abstract: S.1630-1635 ... High-efficiency silicon solar cells with evaporated front contacts and an oxide-passivated rear require post metallization annealing (PMA). In an industrial environment the evaporated front contacts are replaced by screen printed contacts ... ...

    Abstract S.1630-1635

    High-efficiency silicon solar cells with evaporated front contacts and an oxide-passivated rear require post metallization annealing (PMA). In an industrial environment the evaporated front contacts are replaced by screen printed contacts for fast processing and cost reasons. The PMA conditions necessary for optimum rear side passivation can be inferior to such a front side metallization. In order to design a PMA supporting contact in future, this paper investigates what mechanism deteriorates the contact resistance of screen printed front side metallization during nitrogen PMA. Scanning electron microscopy (SEM) on samples with increased contact resistance reveals an altered microstructure at the silver-silicon contact interface that is proposed to impede current flow and hence increases the contact resistance. We present a model that describes the mechanism of contact deterioration during nitrogen PMA.

    93

    Nr.9
    Keywords 621
    Subject code 621
    Language English
    Publishing country de
    Document type Article ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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    Inter-library loan at ZB MED

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  9. Conference proceedings ; Online: Characterizing local contact resistances of interdigitated back contact silicon solar cells

    Padilla, M. / Michl, Bernhard / Reichel, Christian / Hagedorn, N. / Kluska, Sven / Haag, S. / Keding, Roman / Fell, Andreas / Kasemann, Martin / Warta, Wilhelm / Schubert, Martin C.

    2014  

    Abstract: S.1138-1142 ... Next generation high efficiency interdigitated back contact (IBC) silicon solar cells are often designed with complex doping and contacting structures that are sensitive to series resistance induced losses. Particularly local contact ... ...

    Abstract S.1138-1142

    Next generation high efficiency interdigitated back contact (IBC) silicon solar cells are often designed with complex doping and contacting structures that are sensitive to series resistance induced losses. Particularly local contact resistance problems present a major fill factor loss in industrially feasible solar cell designs. In this work, we use advanced two dimensional device simulations to understand the impact of globally and locally deteriorated electron and hole contacts on a typical IBC design. For a set of examples, the effect of an increased contact resistance on the global current voltage characteristic is compared to the signature of a simulated local series resistance image using luminescence imaging. Consistent interpretations and quantitative agreement between global and local analysis are shown. We find that the local series resistance of IBC cells react identically for globally altered electron and hole contact resistances. However, locally deteriorated electron and hole contact resistances do not impact fill factor losses identically. Together with qualitative interpretation of luminescence images, these findings present valuable information for IBC cell manufacturers for understanding their cell design's sensitivity to local contact resistance or broken finger problems on fill factor and short-circuit current.
    Keywords Solarzellen - Entwicklung und Charakterisierung ; Silicium-Photovoltaik ; Herstellung und Analyse von hocheffizienten Solarzellen ; doping ; silicon ; n-type ; resistivity ; VGF
    Subject code 621
    Language English
    Publishing country de
    Document type Conference proceedings ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  10. Article ; Online: Search for Scalar Leptoquarks Produced via τ-Lepton-Quark Scattering in pp Collisions at sqrt[s]=13  TeV.

    Hayrapetyan, A / Tumasyan, A / Adam, W / Andrejkovic, J W / Bergauer, T / Chatterjee, S / Damanakis, K / Dragicevic, M / Escalante Del Valle, A / Hussain, P S / Jeitler, M / Krammer, N / Liko, D / Mikulec, I / Schieck, J / Schöfbeck, R / Schwarz, D / Sonawane, M / Templ, S /
    Waltenberger, W / Wulz, C-E / Darwish, M R / Janssen, T / Van Mechelen, P / Bols, E S / D'Hondt, J / Dansana, S / De Moor, A / Delcourt, M / El Faham, H / Lowette, S / Makarenko, I / Müller, D / Sahasransu, A R / Tavernier, S / Tytgat, M / Van Putte, S / Vannerom, D / Clerbaux, B / De Lentdecker, G / Favart, L / Hohov, D / Jaramillo, J / Khalilzadeh, A / Lee, K / Mahdavikhorrami, M / Malara, A / Paredes, S / Pétré, L / Postiau, N / Thomas, L / Vanden Bemden, M / Vander Velde, C / Vanlaer, P / De Coen, M / Dobur, D / Hong, Y / Knolle, J / Lambrecht, L / Mestdach, G / Rendón, C / Samalan, A / Skovpen, K / Van Den Bossche, N / Wezenbeek, L / Benecke, A / Bruno, G / Caputo, C / Delaere, C / Donertas, I S / Giammanco, A / Jaffel, K / Jain, Sa / Lemaitre, V / Lidrych, J / Mastrapasqua, P / Mondal, K / Tran, T T / Wertz, S / Alves, G A / Coelho, E / Hensel, C / Menezes De Oliveira, T / Moraes, A / Rebello Teles, P / Soeiro, M / Aldá Júnior, W L / Alves Gallo Pereira, M / Barroso Ferreira Filho, M / Brandao Malbouisson, H / Carvalho, W / Chinellato, J / Da Costa, E M / Da Silveira, G G / De Jesus Damiao, D / Fonseca De Souza, S / Martins, J / Mora Herrera, C / Mota Amarilo, K / Mundim, L / Nogima, H / Santoro, A / Silva Do Amaral, S M / Sznajder, A / Thiel, M / Vilela Pereira, A / Bernardes, C A / Calligaris, L / Tomei, T R Fernandez Perez / Gregores, E M / Mercadante, P G / Novaes, S F / Orzari, B / Padula, Sandra S / Aleksandrov, A / Antchev, G / Hadjiiska, R / Iaydjiev, P / Misheva, M / Shopova, M / Sultanov, G / Dimitrov, A / Ivanov, T / Litov, L / Pavlov, B / Petkov, P / Petrov, A / Shumka, E / Keshri, S / Thakur, S / Cheng, T / Guo, Q / Javaid, T / Mittal, M / Yuan, L / Bauer, G / Hu, Z / Liu, J / Yi, K / Chen, G M / Chen, H S / Chen, M / Iemmi, F / Jiang, C H / Kapoor, A / Liao, H / Liu, Z-A / Monti, F / Shahzad, M A / Sharma, R / Song, J N / Tao, J / Wang, C / Wang, J / Wang, Z / Zhang, H / Agapitos, A / Ban, Y / Levin, A / Li, C / Li, Q / Mao, Y / Qian, S J / Sun, X / Wang, D / Yang, H / Zhang, L / Zhou, C / You, Z / Lu, N / Gao, X / Leggat, D / Okawa, H / Zhang, Y / Lin, Z / Lu, C / Xiao, M / Avila, C / Barbosa Trujillo, D A / Cabrera, A / Florez, C / Fraga, J / Reyes Vega, J A / Mejia Guisao, J / Ramirez, F / Rodriguez, M / Ruiz Alvarez, J D / Giljanovic, D / Godinovic, N / Lelas, D / Sculac, A / Kovac, M / Sculac, T / Bargassa, P / Brigljevic, V / Chitroda, B K / Ferencek, D / Mishra, S / Starodumov, A / Susa, T / Attikis, A / Christoforou, K / Konstantinou, S / Mousa, J / Nicolaou, C / Ptochos, F / Razis, P A / Rykaczewski, H / Saka, H / Stepennov, A / Finger, M / Kveton, A / Ayala, E / Carrera Jarrin, E / Assran, Y / Elgammal, S / Abdullah Al-Mashad, M / Mahmoud, M A / Dewanjee, R K / Ehataht, K / Kadastik, M / Lange, T / Nandan, S / Nielsen, C / Pata, J / Raidal, M / Tani, L / Veelken, C / Kirschenmann, H / Osterberg, K / Voutilainen, M / Bharthuar, S / Brücken, E / Garcia, F / Havukainen, J / Kallonen, K T S / Kim, M S / Kinnunen, R / Lampén, T / Lassila-Perini, K / Lehti, S / Lindén, T / Lotti, M / Martikainen, L / Myllymäki, M / Rantanen, M M / Siikonen, H / Tuominen, E / Tuominiemi, J / Luukka, P / Petrow, H / Tuuva, T / Besancon, M / Couderc, F / Dejardin, M / Denegri, D / Faure, J L / Ferri, F / Ganjour, S / Gras, P / Hamel de Monchenault, G / Lohezic, V / Malcles, J / Rander, J / Rosowsky, A / Sahin, M Ö / Savoy-Navarro, A / Simkina, P / Titov, M / Baldenegro Barrera, C / Beaudette, F / Buchot Perraguin, A / Busson, P / Cappati, A / Charlot, C / Damas, F / Davignon, O / De Wit, A / Falmagne, G / Fontana Santos Alves, B A / Ghosh, S / Gilbert, A / Granier de Cassagnac, R / Hakimi, A / Harikrishnan, B / Kalipoliti, L / Liu, G / Motta, J / Nguyen, M / Ochando, C / Portales, L / Salerno, R / Sarkar, U / Sauvan, J B / Sirois, Y / Tarabini, A / Vernazza, E / Zabi, A / Zghiche, A / Agram, J-L / Andrea, J / Apparu, D / Bloch, D / Brom, J-M / Chabert, E C / Collard, C / Falke, S / Goerlach, U / Grimault, C / Haeberle, R / Le Bihan, A-C / Sessini, M A / Van Hove, P / Beauceron, S / Blancon, B / Boudoul, G / Chanon, N / Choi, J / Contardo, D / Depasse, P / Dozen, C / El Mamouni, H / Fay, J / Gascon, S / Gouzevitch, M / Greenberg, C / Grenier, G / Ille, B / Laktineh, I B / Lethuillier, M / Mirabito, L / Perries, S / Purohit, A / Vander Donckt, M / Verdier, P / Xiao, J / Khvedelidze, A / Lomidze, I / Tsamalaidze, Z / Botta, V / Feld, L / Klein, K / Lipinski, M / Meuser, D / Pauls, A / Röwert, N / Teroerde, M / Diekmann, S / Dodonova, A / Eich, N / Eliseev, D / Engelke, F / Erdmann, M / Fackeldey, P / Fischer, B / Hebbeker, T / Hoepfner, K / Ivone, F / Jung, A / Lee, M Y / Mastrolorenzo, L / Merschmeyer, M / Meyer, A / Mukherjee, S / Noll, D / Novak, A / Nowotny, F / Pozdnyakov, A / Rath, Y / Redjeb, W / Rehm, F / Reithler, H / Sarkisovi, V / Schmidt, A / Schuler, S C / Sharma, A / Stein, A / Torres Da Silva De Araujo, F / Vigilante, L / Wiedenbeck, S / Zaleski, S / Dziwok, C / Flügge, G / Haj Ahmad, W / Kress, T / Nowack, A / Pooth, O / Stahl, A / Ziemons, T / Zotz, A / Aarup Petersen, H / Aldaya Martin, M / Alimena, J / Amoroso, S / An, Y / Baxter, S / Bayatmakou, M / Becerril Gonzalez, H / Behnke, O / Belvedere, A / Bhattacharya, S / Blekman, F / Borras, K / Brunner, D / Campbell, A / Cardini, A / Cheng, C / Colombina, F / Consuegra Rodríguez, S / Correia Silva, G / De Silva, M / Eckerlin, G / Eckstein, D / Estevez Banos, L I / Filatov, O / Gallo, E / Geiser, A / Giraldi, A / Greau, G / Guglielmi, V / Guthoff, M / Hinzmann, A / Jafari, A / Jeppe, L / Jomhari, N Z / Kaech, B / Kasemann, M / Kaveh, H / Kleinwort, C / Kogler, R / Komm, M / Krücker, D / Lange, W / Leyva Pernia, D / Lipka, K / Lohmann, W / Mankel, R / Melzer-Pellmann, I-A / Mendizabal Morentin, M / Metwally, J / Meyer, A B / Milella, G / Mussgiller, A / Nürnberg, A / Otarid, Y / Pérez Adán, D / Ranken, E / Raspereza, A / Ribeiro Lopes, B / Rübenach, J / Saggio, A / Scham, M / Schnake, S / Schütze, P / Schwanenberger, C / Selivanova, D / Shchedrolosiev, M / Sosa Ricardo, R E / Sreelatha Pramod, L P / Stafford, D / Vazzoler, F / Ventura Barroso, A / Walsh, R / Wang, Q / Wen, Y / Wichmann, K / Wiens, L / Wissing, C / Wuchterl, S / Yang, Y / Zimermmane Castro Santos, A / Albrecht, A / Albrecht, S / Antonello, M / Bein, S / Benato, L / Bonanomi, M / Connor, P / Eich, M / El Morabit, K / Fischer, Y / Fröhlich, A / Garbers, C / Garutti, E / Grohsjean, A / Hajheidari, M / Haller, J / Jabusch, H R / Kasieczka, G / Keicher, P / Klanner, R / Korcari, W / Kramer, T / Kutzner, V / Labe, F / Lange, J / Lobanov, A / Matthies, C / Mehta, A / Moureaux, L / Mrowietz, M / Nigamova, A / Nissan, Y / Paasch, A / Pena Rodriguez, K J / Quadfasel, T / Raciti, B / Rieger, M / Savoiu, D / Schindler, J / Schleper, P / Schröder, M / Schwandt, J / Sommerhalder, M / Stadie, H / Steinbrück, G / Tews, A / Wolf, M / Brommer, S / Burkart, M / Butz, E / Chwalek, T / Dierlamm, A / Droll, A / Faltermann, N / Giffels, M / Gottmann, A / Hartmann, F / Hofsaess, R / Horzela, M / Husemann, U / Klute, M / Koppenhöfer, R / Link, M / Lintuluoto, A / Maier, S / Mitra, S / Mormile, M / Müller, Th / Neukum, M / Oh, M / Quast, G / Rabbertz, K / Regnery, B / Shadskiy, N / Shvetsov, I / Simonis, H J / Trevisani, N / Ulrich, R / van der Linden, J / Von Cube, R F / Wassmer, M / Wieland, S / Wittig, F / Wolf, R / Wunsch, S / Zuo, X / Anagnostou, G / Assiouras, P / Daskalakis, G / Kyriakis, A / Papadopoulos, A / Stakia, A / Kontaxakis, P / Melachroinos, G / Panagiotou, A / Papavergou, I / Paraskevas, I / Saoulidou, N / Theofilatos, K / Tziaferi, E / Vellidis, K / Zisopoulos, I / Bakas, G / Chatzistavrou, T / Karapostoli, G / Kousouris, K / Papakrivopoulos, I / Siamarkou, E / Tsipolitis, G / Zacharopoulou, A / Adamidis, K / Bestintzanos, I / Evangelou, I / Foudas, C / Gianneios, P / Kamtsikis, C / Katsoulis, P / Kokkas, P / Kosmoglou Kioseoglou, P G / Manthos, N / Papadopoulos, I / Strologas, J / Csanád, M / Farkas, K / Gadallah, M M A / Kadlecsik, Á / Major, P / Mandal, K / Pásztor, G / Rádl, A J / Veres, G I / Bartók, M / Hajdu, C / Horvath, D / Sikler, F / Veszpremi, V / Raics, P / Ujvari, B / Zilizi, G / Bencze, G / Czellar, S / Karancsi, J / Molnar, J / Szillasi, Z / Csorgo, T / Nemes, F / Novak, T / Babbar, J / Bansal, S / Beri, S B / Bhatnagar, V / Chaudhary, G / Chauhan, S / Dhingra, N / Gupta, R / Kaur, A / Kaur, H / Kaur, M / Kumar, S / Meena, M / Sandeep, K / Sheokand, T / Singh, J B / Singla, A / Ahmed, A / Bhardwaj, A / Chhetri, A / Choudhary, B C / Kumar, A / Naimuddin, M / Ranjan, K / Saumya, S / Acharya, S / Baradia, S / Barman, S / Bhowmik, D / Dutta, S / Gomber, B / Palit, P / Saha, G / Sahu, B / Sarkar, S / Ameen, M M / Behera, P K / Behera, S C / Jana, P / Kalbhor, P / Komaragiri, J R / Kumar, D / Panwar, L / Pradhan, R / Pujahari, P R / Saha, N R / Sikdar, A K / Verma, S / Aziz, T / Das, I / Dugad, S / Kumar, M / Mohanty, G B / Suryadevara, P / Bala, A / Banerjee, S / 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    Physical review letters

    2024  Volume 132, Issue 6, Page(s) 61801

    Abstract: The first search for scalar leptoquarks produced in τ-lepton-quark collisions is presented. It is based on a set of proton-proton collision data recorded with the CMS detector at the LHC at a center-of-mass energy of 13 TeV corresponding to an integrated ...

    Abstract The first search for scalar leptoquarks produced in τ-lepton-quark collisions is presented. It is based on a set of proton-proton collision data recorded with the CMS detector at the LHC at a center-of-mass energy of 13 TeV corresponding to an integrated luminosity of 138  fb^{-1}. The reconstructed final state consists of a jet, significant missing transverse momentum, and a τ lepton reconstructed through its hadronic or leptonic decays. Limits are set on the product of the leptoquark production cross section and branching fraction and interpreted as exclusions in the plane of the leptoquark mass and the leptoquark-τ-quark coupling strength.
    Language English
    Publishing date 2024-02-23
    Publishing country United States
    Document type Journal Article
    ZDB-ID 208853-8
    ISSN 1079-7114 ; 0031-9007
    ISSN (online) 1079-7114
    ISSN 0031-9007
    DOI 10.1103/PhysRevLett.132.061801
    Database MEDical Literature Analysis and Retrieval System OnLINE

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