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  1. Article ; Online: Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles.

    Lee, Won-Yong / Kim, Kyoungdu / Lee, Sin-Hyung / Bae, Jin-Hyuk / Kang, In-Man / Park, Minsu / Kim, Kwangeun / Jang, Jaewon

    ACS omega

    2022  Volume 7, Issue 12, Page(s) 10262–10267

    Abstract: Herein, flexible near-infrared (NIR) photodetectors were prepared using silver telluride ( ... ...

    Abstract Herein, flexible near-infrared (NIR) photodetectors were prepared using silver telluride (Ag
    Language English
    Publishing date 2022-03-15
    Publishing country United States
    Document type Journal Article
    ISSN 2470-1343
    ISSN (online) 2470-1343
    DOI 10.1021/acsomega.1c06870
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article: Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

    Lee, Won-Yong / Kim, Do Won / Kim, Hyeon Joong / Kim, Kyoungdu / Lee, Sin-Hyung / Bae, Jin-Hyuk / Kang, In-Man / Kim, Kwangeun / Jang, Jaewon

    ACS applied materials & interfaces. 2022 Feb. 17, v. 14, no. 8

    2022  

    Abstract: This study examines the effect of the annealing time of the Y₂O₃ passivation layer on the electrical performances and bias stabilities of sol–gel-deposited SnO₂ thin-film transistors (TFTs). The environmental stabilities of SnO₂ TFTs were examined. After ...

    Abstract This study examines the effect of the annealing time of the Y₂O₃ passivation layer on the electrical performances and bias stabilities of sol–gel-deposited SnO₂ thin-film transistors (TFTs). The environmental stabilities of SnO₂ TFTs were examined. After optimizing the Y₂O₃ passivation layers in SnO₂ TFTs, the field-effect mobility was 7.59 cm²/V•s, the VTH was 9.16 V, the subthreshold swing (SS) was 0.88 V/decade, and the on/off-current ratio was approximately 1 × 10⁸. VTH shifts were only −0.18 and +0.06 V under negative and positive bias stresses, respectively. The SnO₂ channel layer thickness and oxygen-vacancy concentration in SnO₂, which determine the carrier concentration, were successfully tuned by controlling the annealing time of the Y₂O₃ passivation layers. An extremely thin Y₂O₃ passivation layer effectively blocked external molecules, thus affecting the device performance. The electrical performance was maximized in SnO₂ TFTs using a 15 min-annealed Y₂O₃ passivation layer. In this TFT, the field-effect mobility was maximally retained and the bias and environmental stabilities were sustained over 90 days of air exposure.
    Keywords air ; annealing ; electric field ; materials ; transistors
    Language English
    Dates of publication 2022-0217
    Size p. 10558-10565.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.1c23955
    Database NAL-Catalogue (AGRICOLA)

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  3. Article: Enhanced Switching Reliability of Sol-Gel-Processed Y

    Kim, Do-Won / Kim, Hyeon-Joong / Lee, Won-Yong / Kim, Kyoungdu / Lee, Sin-Hyung / Bae, Jin-Hyuk / Kang, In-Man / Kim, Kwangeun / Jang, Jaewon

    Materials (Basel, Switzerland)

    2022  Volume 15, Issue 5

    Abstract: Sol-gel-processed ... ...

    Abstract Sol-gel-processed Y
    Language English
    Publishing date 2022-03-05
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2487261-1
    ISSN 1996-1944
    ISSN 1996-1944
    DOI 10.3390/ma15051943
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article: Flexible Sol-Gel-Processed Y

    Kim, Hyeon-Joong / Kim, Do-Won / Lee, Won-Yong / Kim, Kyoungdu / Lee, Sin-Hyung / Bae, Jin-Hyuk / Kang, In-Man / Kim, Kwangeun / Jang, Jaewon

    Materials (Basel, Switzerland)

    2022  Volume 15, Issue 5

    Abstract: Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical ... ...

    Abstract Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.
    Language English
    Publishing date 2022-03-03
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2487261-1
    ISSN 1996-1944
    ISSN 1996-1944
    DOI 10.3390/ma15051899
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Improved Environment Stability of Y

    Kim, Hae-In / Lee, Taehun / Lee, Won-Yong / Kim, Kyoungdu / Bae, Jin-Hyuk / Kang, In-Man / Lee, Sin-Hyung / Kim, Kwangeun / Jang, Jaewon

    Materials (Basel, Switzerland)

    2022  Volume 15, Issue 19

    Abstract: In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term ... ...

    Abstract In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM devices was investigated. The Y2O3 RRAM devices with a 20 nm thick Ag top electrode showed an increase in the low resistance state (LRS) and high resistance state (HRS) and a decrease in the HRS/LRS ratio after 30 days owing to oxidation and corrosion of the Ag electrodes. However, Y2O3 RRAM devices with inert Au-passivated Ag electrodes showed a constant RRAM device performance after 30 days. The 150 nm-thick Au passivation layer successfully suppressed the oxidation and corrosion of the Ag electrode by minimizing the chance of contact between water or oxygen molecules and Ag electrodes. The Au/Ag/Y2O3/ITO RRAM devices exhibited more than 300 switching cycles with a decent resistive window (>103). They maintained constant LRS and HRS resistances for up to 104 s, without significant degradation of nonvolatile memory properties for 30 days while stored in air.
    Language English
    Publishing date 2022-10-02
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2487261-1
    ISSN 1996-1944
    ISSN 1996-1944
    DOI 10.3390/ma15196859
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article ; Online: Environmentally and Electrically Stable Sol-Gel-Deposited SnO

    Lee, Won-Yong / Kim, Do Won / Kim, Hyeon Joong / Kim, Kyoungdu / Lee, Sin-Hyung / Bae, Jin-Hyuk / Kang, In-Man / Kim, Kwangeun / Jang, Jaewon

    ACS applied materials & interfaces

    2022  Volume 14, Issue 8, Page(s) 10558–10565

    Abstract: This study examines the effect of the annealing time of the ... ...

    Abstract This study examines the effect of the annealing time of the Y
    Language English
    Publishing date 2022-02-17
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c23955
    Database MEDical Literature Analysis and Retrieval System OnLINE

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    Kategorien

    Order via subito

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