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  1. Book ; Online: Self-heating Effect in Silicon-Photomultipliers

    Garutti, E. / Klanner, R. / Popova, E. / Martens, S. / Schwandt, J. / Villalba, C.

    2022  

    Abstract: The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were ... ...

    Abstract The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al$_2$O$_3$ substrate, which is either directly connected to the temperature-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in the multiplication region of the SiPM and thermal resistance, as well as the time dependencies for heating and cooling. This information can be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating. The method can also be employed for packaged SiPMs with unknown thermal contact to a heat sink. The results presented in this paper are preliminary.
    Keywords Physics - Instrumentation and Detectors
    Subject code 621
    Publishing date 2022-05-11
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  2. Book ; Online: PeakOTron

    Rolph, Jack / Garutti, Erika / Klanner, Robert / Quadfasel, Tobias / Schwandt, Joern

    A Python Module for Fitting Charge Spectra of Silicon Photomultipliers

    2023  

    Abstract: A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a time spread of ... ...

    Abstract A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a time spread of order nanoseconds or less, can be analysed. The entire charge spectra, including the intervals in-between the photoelectron peaks, are fitted, which allows determining, in addition to the mean number of detected photons, gain, gain spread, prompt cross-talk, pedestal, and electronics noise, the dark-count rate as well as the probability and time constant of after-pulses. The starting values of the fit parameters are extracted from the charge spectra. The program performance has been evaluated using simulated charge spectra with the different SiPM parameters varied in a wide range. By analysing 100 simulated spectra for every parameter set, the biases and statistical uncertainties of the individual parameters have been determined. It is found that the parameters are precisely determined and that the entire spectra are well described, in most cases with a $\chi ^2$/NDF close to 1. In addition, measured spectra for two types of SiPMs for a wide range of over-voltages have been analysed. The program achieves mostly a good description of the spectra, and the parameters determined agree with the values from the producers and expectations. The program can be used for detailed analyses of single spectra, but, as it is compatible with the native \texttt{Python} multiprocessing module, also for the automatic characterisation of large samples of SiPMs.
    Keywords Physics - Instrumentation and Detectors
    Subject code 612
    Publishing date 2023-01-27
    Publishing country us
    Document type Book ; Online
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  3. Book ; Online: Study of the V$_2^0$ state in neutron-irradiated silicon using photon-absorption measurements

    Fretwurst, Eckhart / Klanner, Robert / Schwandt, Joern / Vauth, Annika

    2022  

    Abstract: Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have been determined ... ...

    Abstract Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have been determined for photon energies, $E_\gamma $, between 0.62 and 1.30 eV for the samples as irradiated and after 15 min isochronal annealing with temperatures between 80{\deg}C and 330{\deg}C. The radiation-induced absorption coefficient, $\alpha_\mathit{irr}$, has been obtained by subtracting the absorption coefficient for non-irradiated silicon. The $E_\gamma $-dependence of $\alpha_\mathit{irr}$ shows a resonance peak, which is ascribed to the neutral divacancy, V$_2^0$, sitting on a background, and $\alpha_\mathit{irr} (E_\gamma )$ is fitted by a Breit-Wigner line shape on a parameterized background. It is found that at an annealing temperature of 210{\deg}C the V$_2^0$ intensity is reduced by a factor 2, and that at the meV level, the position and the width of the fitted Breit-Wigner do not change with irradiation dose and annealing.

    Comment: 8 pages, 4 figures
    Keywords Condensed Matter - Materials Science ; High Energy Physics - Experiment
    Subject code 535
    Publishing date 2022-12-14
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  4. Book: Entwicklungsarbeiten für strahlungsharte Festkörperdetektoren

    Klanner, Robert

    [Schlussbericht] ; Förderzeitraum: 01.04.96 - 31.12.00 ; BMBF-Förderschwerpunkt Elementarteilchenphysik

    2001  

    Author's details Projektleitung: Klanner
    Language German
    Size 14 S, graph. Darst
    Publisher Univ
    Publishing place Hamburg
    Document type Book
    Note Förderkennzeichen BMBF 05 7HH17I/5 ; Unterschiede zwischen dem gedruckten Dokument und der elektronischen Dokumentenversion können nicht ausgeschlossen werden
    Database Library catalogue of the German National Library of Science and Technology (TIB), Hannover

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  5. Book: Messungen mit dem ZEUS-Detektor und Weiterentwicklung von Detektorkomponenten

    Klanner, Robert

    Schlussbericht

    2001  

    Author's details Robert Klanner
    Language German
    Size 11 S, Ill., graph. Darst
    Publisher Univ
    Publishing place Hamburg
    Document type Book
    Note Förderkennzeichen BMBF 05 7HH29P/9 ; Unterschiede zwischen dem gedruckten Dokument und der elektronischen Dokumentenversion können nicht ausgeschlossen werden
    Database Library catalogue of the German National Library of Science and Technology (TIB), Hannover

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  6. Article ; Online: Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon.

    Zhang, Jiaguo / Pintilie, Ioana / Fretwurst, Eckhart / Klanner, Robert / Perrey, Hanno / Schwandt, Joern

    Journal of synchrotron radiation

    2012  Volume 19, Issue Pt 3, Page(s) 340–346

    Abstract: Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: doses of up to 1 GGy of 12 keV photons, up to 10(5) 12 keV photons per 200 µm × 200 µm pixel arriving within ...

    Abstract Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: doses of up to 1 GGy of 12 keV photons, up to 10(5) 12 keV photons per 200 µm × 200 µm pixel arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO(2) layer and of the Si-SiO(2) interface, using MOS (metal-oxide-semiconductor) capacitors manufactured on high-resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, have been studied. Measurements of capacitance/conductance-voltage (C/G-V) at different frequencies, as well as of thermal dielectric relaxation current (TDRC), have been performed. The data can be described by a dose-dependent oxide charge density and three dominant radiation-induced interface states with Gaussian-like energy distributions in the silicon band gap. It is found that the densities of the fixed oxide charges and of the three interface states increase up to dose values of approximately 10 MGy and then saturate or even decrease. The shapes and the frequency dependences of the C/G-V measurements can be quantitatively described by a simple model using the parameters extracted from the TDRC measurements.
    Language English
    Publishing date 2012-05
    Publishing country United States
    Document type Journal Article ; Research Support, Non-U.S. Gov't
    ZDB-ID 2021413-3
    ISSN 1600-5775 ; 0909-0495
    ISSN (online) 1600-5775
    ISSN 0909-0495
    DOI 10.1107/S0909049512002348
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Book: Silicon detectors

    Klanner, Robert

    (invited talk at the Topic. Seminar on Perspectives of Experimental Apparatus at Future High Energy Machines, San Miniato, May 21 - 25, 1984)

    (Max-Planck-Institut für Physik und Astrophysik : EXP EL ; 135)

    1984  

    Author's details Robert Klanner. [Max-Planck-Inst. für Physik u. Astrophysik, Werner-Heisenberg-Inst. für Pysik]
    Series title Max-Planck-Institut für Physik und Astrophysik : EXP EL ; 135
    Language English
    Size 25 S, graph. Darst, 30 cm
    Publisher Werner-Heisenberg-Inst. für Physik
    Publishing place München
    Document type Book
    Note Literaturverz. S. 12 - 14
    Database Library catalogue of the German National Library of Science and Technology (TIB), Hannover

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  8. Book ; Online: Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

    Zhang, Jiaguo / Pintilie, Ioana / Fretwurst, Eckhart / Klanner, Robert / Perrey, Hanno / Schwandt, Joern

    2011  

    Abstract: Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum ... ...

    Abstract Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO_2 layer and of the Si-SiO_2 interface using MOS capacitors manufactured on high resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, have been studied. Measurements of Capacitance/Conductance-Voltage (C/G-V) at different frequencies, as well as Thermal Dielectric Relaxation Current (TDRC) have been performed. The data can be described by a radiation dependent oxide charge density and three dominant radiation-induced interface states with Gaussian-like energy distributions in the silicon band gap. It is found that the densities of the fixed oxide charges and of the three interface states increase up to dose values of approximately 10 MGy and then saturate or even decrease. The shapes and the frequency dependences of the C/G-V measurements can be quantitatively described by a simple model using the parameters extracted from the TDRC measurements.

    Comment: 14 pages and 7 figures
    Keywords Physics - Instrumentation and Detectors
    Subject code 621
    Publishing date 2011-07-29
    Publishing country us
    Document type Book ; Online
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  9. Article ; Online: The Adaptive Gain Integrating Pixel Detector at the European XFEL.

    Allahgholi, Aschkan / Becker, Julian / Delfs, Annette / Dinapoli, Roberto / Goettlicher, Peter / Greiffenberg, Dominic / Henrich, Beat / Hirsemann, Helmut / Kuhn, Manuela / Klanner, Robert / Klyuev, Alexander / Krueger, Hans / Lange, Sabine / Laurus, Torsten / Marras, Alessandro / Mezza, Davide / Mozzanica, Aldo / Niemann, Magdalena / Poehlsen, Jennifer /
    Schwandt, Joern / Sheviakov, Igor / Shi, Xintian / Smoljanin, Sergej / Steffen, Lothar / Sztuk-Dambietz, Jolanta / Trunk, Ulrich / Xia, Qingqing / Zeribi, Mourad / Zhang, Jiaguo / Zimmer, Manfred / Schmitt, Bernd / Graafsma, Heinz

    Journal of synchrotron radiation

    2019  Volume 26, Issue Pt 1, Page(s) 74–82

    Abstract: The Adaptive Gain Integrating Pixel Detector (AGIPD) is an X-ray imager, custom designed for the European X-ray Free-Electron Laser (XFEL). It is a fast, low-noise integrating detector, with an adaptive gain amplifier per pixel. This has an equivalent ... ...

    Abstract The Adaptive Gain Integrating Pixel Detector (AGIPD) is an X-ray imager, custom designed for the European X-ray Free-Electron Laser (XFEL). It is a fast, low-noise integrating detector, with an adaptive gain amplifier per pixel. This has an equivalent noise of less than 1 keV when detecting single photons and, when switched into another gain state, a dynamic range of more than 10
    Language English
    Publishing date 2019-01-01
    Publishing country United States
    Document type Journal Article
    ZDB-ID 2021413-3
    ISSN 1600-5775 ; 0909-0495
    ISSN (online) 1600-5775
    ISSN 0909-0495
    DOI 10.1107/S1600577518016077
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Book ; Thesis: Analysis of the reaction π-p → π-π-π+p AT 25 and 40 GeV/c

    Klanner, Robert

    1973  

    Author's details Robert Klanner
    Language English
    Size IV, 115 S, graph. Darst, 4
    Document type Book ; Thesis
    Thesis / German Habilitation thesis Univ., Diss.--München, 1973
    Database Former special subject collection: coastal and deep sea fishing

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