Article ; Online: Fabrication of three-dimensional autocloned photonic crystal on sapphire substrate.
Applied optics
2011 Volume 50, Issue 9, Page(s) C1–4
Abstract: We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band ... ...
| Abstract | We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED) for application in manipulating the light extraction of the sapphire-based GaN LED. |
|---|---|
| Language | English |
| Publishing date | 2011-03-20 |
| Publishing country | United States |
| Document type | Journal Article |
| ISSN | 1539-4522 |
| ISSN (online) | 1539-4522 |
| DOI | 10.1364/AO.50.0000C1 |
| Database | MEDical Literature Analysis and Retrieval System OnLINE |
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