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  1. Article ; Online: Spin-based magnetic random-access memory for high-performance computing.

    Cai, Kaiming / Jin, Tianli / Lew, Wen Siang

    National science review

    2023  Volume 11, Issue 3, Page(s) nwad272

    Abstract: Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing ... ...

    Abstract Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing architectures.
    Language English
    Publishing date 2023-10-25
    Publishing country China
    Document type Journal Article
    ZDB-ID 2745465-4
    ISSN 2053-714X ; 2053-714X
    ISSN (online) 2053-714X
    ISSN 2053-714X
    DOI 10.1093/nsr/nwad272
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Strain-induced degradation and recovery of flexible NbO

    Ang, Jia Min / Dananjaya, Putu Andhita / Ang, Calvin Ching Ian / Lim, Gerard Joseph / Lew, Wen Siang

    Scientific reports

    2023  Volume 13, Issue 1, Page(s) 16000

    Abstract: We investigate the functionality of ... ...

    Abstract We investigate the functionality of NbO
    Language English
    Publishing date 2023-09-25
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-023-43192-w
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations.

    Koh, Eng Kang / Dananjaya, Putu Andhita / Poh, Han Yin / Liu, Lingli / Lee, Calvin Xiu Xian / Thong, Jia Rui / You, Young Seon / Lew, Wen Siang

    Nanoscale horizons

    2024  Volume 9, Issue 5, Page(s) 828–842

    Abstract: The forefront of neuromorphic research strives to develop devices with specific properties, ...

    Abstract The forefront of neuromorphic research strives to develop devices with specific properties,
    Language English
    Publishing date 2024-04-29
    Publishing country England
    Document type Journal Article
    ISSN 2055-6764
    ISSN (online) 2055-6764
    DOI 10.1039/d3nh00554b
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications.

    Jin, Tianli / Zhang, Bo / Tan, Funan / Lim, Gerard Joseph / Chen, Ze / Cao, Jiangwei / Lew, Wen Siang

    Nano letters

    2024  Volume 24, Issue 18, Page(s) 5521–5528

    Abstract: Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on ... ...

    Abstract Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on the DW position require efficient DW pinning. Here, we achieve granular magnetization switching by incorporating an HfOx insertion layer between the Co/Ti interface. This corresponds to a transition in the switching model from the DW motion to DW nucleation. Compared to the conventional Pt/Co/Ti structure, incorporation of the HfOx layer results in an enhanced SOT efficiency and a lower switching current density. We also realized stable multistate storage and synaptic plasticity by applying pulse current in the Pt/Co/HfOx/Ti device. The simulation of artificial neural networks (ANN) based on the device can perform digital recognition tasks with an accuracy rate of 91%. These results identify that DW nucleation with a Pt/Co/HfOx/Ti based device has potential applications in multistate storage and ANN.
    Language English
    Publishing date 2024-04-25
    Publishing country United States
    Document type Journal Article
    ISSN 1530-6992
    ISSN (online) 1530-6992
    DOI 10.1021/acs.nanolett.4c00662
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article: Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiOₓ-Based Exponential Selector

    Chee, Mun Yin / Dananjaya, Putu Andhita / Lim, Gerard Joseph / Du, Yuanmin / Lew, Wen Siang

    ACS applied materials & interfaces. 2022 July 27, v. 14, no. 31

    2022  

    Abstract: Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to ... ...

    Abstract Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to reproduce from a single nonvolatile resistive random-access memory (RRAM) element, as it requires a certain degree of volatility. In this work, a Pt/TiOₓ/Pt exponential selector is introduced not only to suppress the sneak current but also to enable the TIP feature in a one selector-one RRAM (1S1R) synaptic device. Our measurements reveal that the exponential selector exhibits the STP characteristic, while a Pt/HfOₓ/Ti RRAM enables the long-term memory capability of the synapse. Thereafter, we experimentally demonstrated pulse frequency-dependent multilevel switching in the 1S1R device, exhibiting the TIP capability of the developed 1S1R synapse. The observed STP of the selector is strongly influenced by the bottom metal–oxide interface, in which Ar plasma treatment on the bottom Pt electrode resulted in the annihilation of the STP feature in the selector. A mechanism is thus proposed to explain the observed STP, using the local electric field enhancement induced at the metal–oxide interface coupled with the drift-diffusion model of mobile O²– and Ti³⁺ ions. This work therefore provides a reliable means of producing the STP feature in a 1S1R device, which demonstrates the TIP capability sought after in hardware-based ANN.
    Keywords computer hardware ; electric field ; electrodes ; memory ; plasticity ; synapse
    Language English
    Dates of publication 2022-0727
    Size p. 35959-35968.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c11016
    Database NAL-Catalogue (AGRICOLA)

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  6. Article ; Online: Antiferromagnetic skyrmion repulsion based artificial neuron device.

    Bindal, Namita / Ian, Calvin Ang Chin / Lew, Wen Siang / Kaushik, Brajesh Kumar

    Nanotechnology

    2021  Volume 32, Issue 21

    Abstract: Magnetic skyrmions are potential candidates for neuromorphic computing due to their inherent topologically stable particle-like behavior, low driving current density, and nanoscale size. Antiferromagnetic skyrmions are favored as they can be driven ... ...

    Abstract Magnetic skyrmions are potential candidates for neuromorphic computing due to their inherent topologically stable particle-like behavior, low driving current density, and nanoscale size. Antiferromagnetic skyrmions are favored as they can be driven parallel to in-plane electrical currents as opposed to ferromagnetic skyrmions which exhibit the skyrmion Hall effect and eventually cause their annihilation at the edge of nanotracks. In this paper, an antiferromagnetic skyrmion based artificial neuron device consisting of a magnetic anisotropy barrier on a nanotrack is proposed. It exploits inter-skyrmion repulsion, mimicking the integrate-fire (IF) functionality of a biological neuron. The device threshold represented by the maximum number of skyrmions that can be pinned by the barrier can be tuned based on the particular current density employed on the nanotrack. The corresponding neuron spiking event occurs when a skyrmion overcomes the barrier. By raising the device threshold, lowering the barrier width and height, the operating current density of the device can be decreased to further enhance its energy efficiency. The proposed device paves the way for developing energy-efficient neuromorphic computing in antiferromagnetic spintronics.
    Language English
    Publishing date 2021-03-04
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/abe261
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article ; Online: Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures.

    Jin, Tianli / Lim, Gerard Joseph / Poh, Han Yin / Wu, Shuo / Tan, Funan / Lew, Wen Siang

    ACS applied materials & interfaces

    2022  Volume 14, Issue 7, Page(s) 9781–9787

    Abstract: Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin ... ...

    Abstract Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through interfacing with a dielectric MgO layer. We demonstrate tunability of the effective out-of-plane spin torque acting on the ferromagnetic Co layer, enabling current-induced SOT magnetization switching without the assistance of an external magnetic field. The influence of the MgO layer thickness on effective SOT efficiency shows saturation at 4 nm, while up to 80% of field-free magnetization switching ratio is achieved with the MgO between 5 and 8 nm. We analyze and attribute the complex interaction to spin reflection at the dielectric/heavy metal interface and spin scattering within the dielectric medium due to interfacial electric fields. Further, through substituting the dielectric with Ti or Pt, we confirm that the MgO layer is indeed responsible for the observed field-free magnetization switching mechanism.
    Language English
    Publishing date 2022-02-11
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c22061
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  8. Article ; Online: Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiO

    Chee, Mun Yin / Dananjaya, Putu Andhita / Lim, Gerard Joseph / Du, Yuanmin / Lew, Wen Siang

    ACS applied materials & interfaces

    2022  Volume 14, Issue 31, Page(s) 35959–35968

    Abstract: Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to ... ...

    Abstract Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to reproduce from a single nonvolatile resistive random-access memory (RRAM) element, as it requires a certain degree of volatility. In this work, a Pt/TiO
    Language English
    Publishing date 2022-07-27
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c11016
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  9. Article ; Online: The impact of oxygen vacancy defect density on the nonlinearity and short-term plasticity of TiO

    Chee, Mun Yin / Andhita Dananjaya, Putu / Lim, Gerard Joseph / Lee, Calvin Xiu Xian / Liu, Lingli / Lew, Wen Siang

    Nanotechnology

    2023  Volume 34, Issue 36

    Abstract: The readout margin of the one selector-one RRAM crossbar array architecture is strongly dependent on the nonlinearity of the selector device. In this work, we demonstrated that the nonlinearity of Pt/ ... ...

    Abstract The readout margin of the one selector-one RRAM crossbar array architecture is strongly dependent on the nonlinearity of the selector device. In this work, we demonstrated that the nonlinearity of Pt/TiO
    Language English
    Publishing date 2023-06-19
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/acda40
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Proton-Assisted Redox-Based Three-Terminal Memristor for Synaptic Device Applications.

    Liu, Lingli / Dananjaya, Putu Andhita / Chee, Mun Yin / Lim, Gerard Joseph / Lee, Calvin Xiu Xian / Lew, Wen Siang

    ACS applied materials & interfaces

    2023  Volume 15, Issue 24, Page(s) 29287–29296

    Abstract: Emerging technologies, i.e., spintronics, 2D materials, and memristive devices, have been widely investigated as the building block of neuromorphic computing systems. Three-terminal memristor (3TM) is specifically designed to mitigate the challenges ... ...

    Abstract Emerging technologies, i.e., spintronics, 2D materials, and memristive devices, have been widely investigated as the building block of neuromorphic computing systems. Three-terminal memristor (3TM) is specifically designed to mitigate the challenges encountered by its two-terminal counterpart as it can concurrently execute signal transmission and memory operations. In this work, we present a complementary metal-oxide-semiconductor-compatible 3TM with highly linear weight update characteristics and a dynamic range of ∼15. The switching mechanism is governed by the migration of oxygen ions and protons in and out of the channel under an external gate electric field. The involvement of the protonic defects in the electrochemical reactions is proposed based on the bipolar pulse trains required to initiate the oxidation process and the device electrical characteristics under different humidity levels. For the synaptic operation, an excellent endurance performance with over 256k synaptic weight updates was demonstrated while maintaining a stable dynamic range. Additionally, the synaptic performance of the 3TM is simulated and implemented into a four-layer neural network (NN) model, achieving an accuracy of ∼92% in MNIST handwritten digit recognition. With such desirable conductance modulation characteristics, our proposed 3T-memristor is a promising synaptic device candidate to realize the hardware implementation of the artificial NN.
    Language English
    Publishing date 2023-06-12
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.3c03974
    Database MEDical Literature Analysis and Retrieval System OnLINE

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