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  1. Article: Origin of Interface Limitation in Zn(O,S)/CuInS₂-Based Solar Cells

    Sood, Mohit / Bombsch, Jakob / Lomuscio, Alberto / Shukla, Sudhanshu / Hartmann, Claudia / Frisch, Johannes / Bremsteller, Wolfgang / Ueda, Shigenori / Wilks, Regan G. / Bär, Marcus / Siebentritt, Susanne

    ACS applied materials & interfaces. 2022 Feb. 08, v. 14, no. 7

    2022  

    Abstract: Copper indium disulfide (CuInS₂) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination, resulting in poor solar cell performance. An unfavorable “cliff”-like conduction band ... ...

    Abstract Copper indium disulfide (CuInS₂) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination, resulting in poor solar cell performance. An unfavorable “cliff”-like conduction band alignment at the buffer/CuInS₂ interface could be a possible cause of enhanced interface recombination in the device. In this work, we exploit direct and inverse photoelectron spectroscopy together with electrical characterization to investigate the cause of interface recombination in chemical bath-deposited Zn(O,S)/co-evaporated CuInS₂-based devices. Temperature-dependent current–voltage analyses indeed reveal an activation energy of the dominant charge carrier recombination path, considerably smaller than the absorber bulk band gap, confirming the dominant recombination channel to be present at the Zn(O,S)/CuInS₂ interface. However, photoelectron spectroscopy measurements indicate a small (0.1 eV) “spike”-like conduction band offset at the Zn(O,S)/CuInS₂ interface, excluding an unfavorable energy-level alignment to be the prominent cause for strong interface recombination. The observed band bending upon interface formation also suggests Fermi-level pinning not to be the main reason, leaving near-interface defects (as recently observed in Cu-rich CuInSe₂) as the likely reason for the performance-limiting interface recombination.
    Keywords activation energy ; disulfides ; indium ; solar cells ; spectroscopy
    Language English
    Dates of publication 2022-0208
    Size p. 9676-9684.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.1c19156
    Database NAL-Catalogue (AGRICOLA)

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  2. Article ; Online: Origin of Interface Limitation in Zn(O,S)/CuInS

    Sood, Mohit / Bombsch, Jakob / Lomuscio, Alberto / Shukla, Sudhanshu / Hartmann, Claudia / Frisch, Johannes / Bremsteller, Wolfgang / Ueda, Shigenori / Wilks, Regan G / Bär, Marcus / Siebentritt, Susanne

    ACS applied materials & interfaces

    2022  Volume 14, Issue 7, Page(s) 9676–9684

    Abstract: Copper indium disulfide ( ... ...

    Abstract Copper indium disulfide (CuInS
    Language English
    Publishing date 2022-02-08
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.1c19156
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Continuous-wave laser annealing of metallic layers for CuInSe

    Arnou, Panagiota / Lomuscio, Alberto / Weiss, Thomas P / Siopa, Daniel / Giraldo, Sergio / Saucedo, Edgardo / Scarpulla, Michael A / Dale, Phillip J

    RSC advances

    2020  Volume 10, Issue 1, Page(s) 584–594

    Abstract: Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu-In-Se thin films as precursors for ... ...

    Abstract Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu-In-Se thin films as precursors for CuInSe
    Language English
    Publishing date 2020-01-02
    Publishing country England
    Document type Journal Article
    ISSN 2046-2069
    ISSN (online) 2046-2069
    DOI 10.1039/c9ra06896a
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article: Continuous-wave laser annealing of metallic layers for CuInSe₂ solar cell applications: effect of preheating treatment on grain growth

    Arnou, Panagiota / Lomuscio, Alberto / Weiss, Thomas P / Siopa, Daniel / Giraldo, Sergio / Saucedo, Edgardo / Scarpulla, Michael A / Dale, Phillip J

    RSC advances. 2020 Jan. 02, v. 10, no. 1

    2020  

    Abstract: Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu–In–Se thin films as precursors for CuInSe₂ semiconductor absorber layers via laser ... ...

    Abstract Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu–In–Se thin films as precursors for CuInSe₂ semiconductor absorber layers via laser annealing. The reaction mechanism of laser annealed metal stacks is revealed by measuring ex situ X-ray diffractograms, Raman spectra and composition. It is shown that the formation of CuInSe₂ occurs via the formation of CuₓSe/InₓSey binary phases as in conventional annealing routes, despite the entirely different annealing time scale. Pre-alloying the Cu and In metals prior to laser annealing significantly enhances the selenisation reaction rate. Laser annealing for six seconds approaches a near phase-pure material, which exhibits similar crystalline quality to the reference material annealed for ninety minutes in a tube furnace. The estimated quasi Fermi level splitting deficit for the laser annealed material is only 60 meV lower than the reference sample, which implies a high optoelectronic quality.
    Keywords Raman spectroscopy ; X-ray diffraction ; annealing ; copper ; films (materials) ; furnaces ; reaction mechanisms ; selenides ; semiconductors ; solar cells
    Language English
    Dates of publication 2020-0102
    Size p. 584-594.
    Publishing place The Royal Society of Chemistry
    Document type Article
    ISSN 2046-2069
    DOI 10.1039/c9ra06896a
    Database NAL-Catalogue (AGRICOLA)

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  5. Book ; Online: Composition variations in Cu(In,Ga)(S,Se)2 solar cells

    Prot, Aubin JC. M. / Melchiorre, Michele / Dingwell, Felix / Zelenina, Anastasia / Elanzeery, Hossam / Lomuscio, Alberto / Dalibor, Thomas / Guc, Maxim / Fonoll-Rubio, Robert / Izquierdo-Roca, Victor / Kusch, Gunnar / Oliver, Rachel A. / Siebentritt, Susanne

    not a gradient, but an interlaced network of two phases

    2023  

    Abstract: Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, ... ...

    Abstract Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, we demonstrate that in industrial absorbers grown in the pilot line of Avancis, the back part is a source of non-radiative recombination. Depth-resolved photoluminescence (PL) measurements reveal two main radiative recombination paths at 1.04 eV and 1.5-1.6 eV, attributed to two phases of low and high band gap material, respectively. Instead of a continuous change in the band gap throughout the thickness of the absorber, we propose a model where discrete band gap phases interlace, creating an apparent gradient. Cathodoluminescence and Raman scattering spectroscopy confirm this result. Additionally, deep defects associated to the high gap phase reduce the absorber performance. Etching away the back part of the absorber leads to an increase of one order of magnitude in the PL intensity, i.e., 60 meV in quasi Fermi level splitting. Non-radiative voltage losses correlate linearly with the relative contribution of the high energy PL peak, suggesting that reducing the high gap phase could increase the open circuit voltage by up to 180 mV.
    Keywords Condensed Matter - Materials Science
    Subject code 530
    Publishing date 2023-07-05
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

    Full text online

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  6. Book ; Online: Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment

    Sood, Mohit / Lomuscio, Alberto / Werner, Florian / Nikolaeva, Aleksandra / Dale, Phillip J. / Melchiorre, Michele / Guillot, Jerome / Abou-Ras, Daniel / Siebentritt, Susanne

    2021  

    Abstract: Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface ... ...

    Abstract Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S-PDT) to passivate the interface of CuInS2 thin films grown under Cu-rich conditions, which show excellent qFLs values, but much lower VOCs. The CuInS2 absorbers are treated in three different S-containing solutions at 80 oC. Absolute calibrated photoluminescence and current-voltage measurements demonstrate a reduction of the deficit between qFLs and VOC in the best S-PDT device by almost one third compared to the untreated device. Analysis of temperature dependence of the open-circuit voltage shows increased activation energy for the dominant recombination path, indicating less interface recombination. In addition, capacitance transient measurements reveal the presence of slow metastable defects in the untreated solar cell. The slow response is considerably reduced by the S-PDT, suggesting passivation of these slow metastable defects. The results demonstrate the effectiveness of solution based S-treatment in passivating defects, presenting a promising strategy to explore and reduce defect states near the interface of chalcogenide semiconductors.

    Comment: 43 pages, 14 figures, 5 tables, under review
    Keywords Condensed Matter - Materials Science ; Physics - Applied Physics
    Subject code 600
    Publishing date 2021-01-29
    Publishing country us
    Document type Book ; Online
    Database BASE - Bielefeld Academic Search Engine (life sciences selection)

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  7. Article: Direct Probing of Gap States and Their Passivation in Halide Perovskites by High-Sensitivity, Variable Energy Ultraviolet Photoelectron Spectroscopy

    Levine, Igal / Shimizu, Kohei / Lomuscio, Alberto / Kulbak, Michael / Rehermann, Carolin / Zohar, Arava / Abdi-Jalebi, Mojtaba / Zhao, Baodan / Siebentritt, Susanne / Zu, Fengshuo / Koch, Norbert / Kahn, Antoine / Hodes, Gary / Friend, Richard H / Ishii, Hisao / Cahen, David

    Journal of physical chemistry. 2021 Mar. 02, v. 125, no. 9

    2021  

    Abstract: Direct detection of intrinsic defects in halide perovskites (HaPs) by standard methods utilizing optical excitation is quite challenging, due to the low density of defects in most samples of this family of materials (≤10¹⁵ cm–³ in polycrystalline thin ... ...

    Abstract Direct detection of intrinsic defects in halide perovskites (HaPs) by standard methods utilizing optical excitation is quite challenging, due to the low density of defects in most samples of this family of materials (≤10¹⁵ cm–³ in polycrystalline thin films and ≤10¹¹ cm–³ in single crystals, except melt-grown ones). While several electrical methods can detect defect densities <10¹⁵ cm–³, such as deep level transient spectroscopy (DLTS) or thermally stimulated current (TSC), they require preparation of ohmic and/or rectifying electrical contacts to the sample, which not only poses a challenge by itself in the case of HaPs but also may create defects at the contact–HaP interface and introduce extrinsic defects into the HaP. Here, we show that low-energy photoelectron spectroscopy measurements can be used to obtain directly the energy position of gap states in Br-based wide-bandgap (Eg > 2 eV) HaPs. By measuring HaP layers on both hole- and electron-contact layers, as well as single crystals without contacts, we conclude that the observed deep defects are intrinsic to the Br-based HaP, and we propose a passivation route via the incorporation of a 2D-forming ligand into the precursor solution.
    Keywords energy ; ligands ; physical chemistry ; spectroscopy
    Language English
    Dates of publication 2021-0302
    Size p. 5217-5225.
    Publishing place American Chemical Society
    Document type Article
    Note NAL-AP-2-clean
    ISSN 1932-7455
    DOI 10.1021/acs.jpcc.0c11627
    Database NAL-Catalogue (AGRICOLA)

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  8. Article ; Online: Waste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se)

    Chu, Van Ben / Siopa, Daniel / Debot, Alice / Adeleye, Damilola / Sood, Mohit / Lomuscio, Alberto / Melchiorre, Michele / Guillot, Jérôme / Valle, Nathalie / El Adib, Brahime / Rommelfangen, Jonathan / Dale, Phillip J

    ACS applied materials & interfaces

    2021  Volume 13, Issue 11, Page(s) 13009–13021

    Abstract: Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se) ...

    Abstract Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se)
    Language English
    Publishing date 2021-03-09
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c16860
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  9. Article: Alternative Therapies in the Treatment of Atrial Fibrillation.

    Lombardi, Federico / Belletti, Sebastiano / Lomuscio, Alberto

    Journal of atrial fibrillation

    2013  Volume 5, Issue 6, Page(s) 754

    Abstract: Atrial fibrillation (AF) is the most common clinical arrhythmia and represents a major social and economic problem. The number of subjects with AF is constantly increasing as a result of aging and improved survival in several cardiac and non-cardiac ... ...

    Abstract Atrial fibrillation (AF) is the most common clinical arrhythmia and represents a major social and economic problem. The number of subjects with AF is constantly increasing as a result of aging and improved survival in several cardiac and non-cardiac diseases. Patients with AF are often symptomatic, have a reduced physical capacity and are at high risk for thromboembolic events. Moreover, AF is associated with increased mortality and independent of the management, based either on rhythm or rate control strategy. The safety and efficacy of most anti-arrhythmic drugs are questionable. Increasing attention has therefore been addressed to evaluate the possible therapeutic and/or preventive effects of forms of treatment coming from ancient medical traditions of Far East, like acupuncture and yoga. In traditional Chinese medicine, acupuncture has been found effective in managing patients with paroxysmal supraventricular tachycardia. Recently, also in the Western literature, reports have been published supporting the clinical efficacy of acupuncture to treat arterial hypertension and to reduce chest pain. Other studies have evaluated the effects of acupuncture and other methods of Eastern Medicine, i.e., Qigong, Tai Chi Chuan and Yoga, in the treatment of cardiac illnesses associated with supraventricular arrhythmias. Two reports on the effects of acupuncture in preventing or reducing the rate of AF recurrences in patients with persistent or paroxysmal AF have been recently reported . Another ancient traditional eastern form of therapy and prevention, i.e., yoga, has been recently shown to reduce episodes of atrial fibrillation and improve the symptoms of anxiety and depression often associated with this arrhythmia. Growing evidence indicates that acupuncture and yoga are safe, without any pro-arrhythmic effect and with limited cost. All these factors should be considered when evaluating the efficacy of therapeutic intervention for an epidemic disease such as AF.
    Language English
    Publishing date 2013-04-06
    Publishing country United States
    Document type Journal Article ; Review
    ZDB-ID 2451936-4
    ISSN 1941-6911
    ISSN 1941-6911
    DOI 10.4022/jafib.754
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Micro-sized thin-film solar cells via area-selective electrochemical deposition for concentrator photovoltaics application.

    Siopa, Daniel / El Hajraoui, Khalil / Tombolato, Sara / Babbe, Finn / Lomuscio, Alberto / Wolter, Max H / Anacleto, Pedro / Abderrafi, Kamal / Deepak, Francis L / Sadewasser, Sascha / Dale, Phillip J

    Scientific reports

    2020  Volume 10, Issue 1, Page(s) 14763

    Abstract: Micro-concentrator solar cells enable higher power conversion efficiencies and material savings when compared to large-area non-concentrated solar cells. In this study, we use materials-efficient area-selective electrodeposition of the metallic elements, ...

    Abstract Micro-concentrator solar cells enable higher power conversion efficiencies and material savings when compared to large-area non-concentrated solar cells. In this study, we use materials-efficient area-selective electrodeposition of the metallic elements, coupled with selenium reactive annealing, to form Cu(In,Ga)Se
    Language English
    Publishing date 2020-09-08
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-020-71717-0
    Database MEDical Literature Analysis and Retrieval System OnLINE

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