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  1. Article ; Online: Thermoelectric properties of Gd and Se double substituted tetrahedrite.

    Rout, Umasankar / Mallik, Ramesh Chandra

    Dalton transactions (Cambridge, England : 2003)

    2024  Volume 53, Issue 8, Page(s) 3511–3522

    Abstract: The compound ... ...

    Abstract The compound Cu
    Language English
    Publishing date 2024-02-20
    Publishing country England
    Document type Journal Article
    ZDB-ID 1472887-4
    ISSN 1477-9234 ; 1364-5447 ; 0300-9246 ; 1477-9226
    ISSN (online) 1477-9234 ; 1364-5447
    ISSN 0300-9246 ; 1477-9226
    DOI 10.1039/d3dt03795a
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  2. Article ; Online: Enhanced thermoelectric properties of In-filled Co

    Ghosh, Sanyukta / Jain, Shubhanth / Mishra, Soumya Ranjan / Rogl, Gerda / Rogl, Peter / Bauer, Ernst / Murty, B S / Govindaraj, A / Mallik, Ramesh Chandra

    Dalton transactions (Cambridge, England : 2003)

    2024  Volume 53, Issue 2, Page(s) 715–723

    Abstract: Uniform dispersion of nanosized secondary phases in bulk thermoelectric materials has proven to be an effective strategy to reduce the lattice part of thermal conductivity and improve the thermoelectric efficiency. In this work, reduced graphene oxide ( ... ...

    Abstract Uniform dispersion of nanosized secondary phases in bulk thermoelectric materials has proven to be an effective strategy to reduce the lattice part of thermal conductivity and improve the thermoelectric efficiency. In this work, reduced graphene oxide (rGO) was uniformly dispersed in the In
    Language English
    Publishing date 2024-01-02
    Publishing country England
    Document type Journal Article
    ZDB-ID 1472887-4
    ISSN 1477-9234 ; 1364-5447 ; 0300-9246 ; 1477-9226
    ISSN (online) 1477-9234 ; 1364-5447
    ISSN 0300-9246 ; 1477-9226
    DOI 10.1039/d3dt03399f
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  3. Article ; Online: Preferential phonon scattering and low energy carrier filtering by interfaces of

    Ghosh, Sanyukta / Shankar, Gyan / Karati, Anirudha / Rogl, Gerda / Rogl, Peter / Bauer, Ernst / Murty, B S / Suwas, Satyam / Mallik, Ramesh Chandra

    Dalton transactions (Cambridge, England : 2003)

    2020  Volume 49, Issue 44, Page(s) 15883–15894

    Abstract: Filling the voids of cage forming compounds with loosely bound electropositive elements and by incorporating nano-sized secondary phases are promising approaches to enhance the thermoelectric figure of merit of these materials. Hence, in this work, by ... ...

    Abstract Filling the voids of cage forming compounds with loosely bound electropositive elements and by incorporating nano-sized secondary phases are promising approaches to enhance the thermoelectric figure of merit of these materials. Hence, in this work, by combining these two approaches-inserting In into the voids of skutterudite Co4Sb12 as well as dispersing nanoparticles (GaSb)-we have synthesized various samples via ball-milling and spark plasma sintering. InSb as the secondary phase of the matrix, mixed with GaSb, forms the solid solution Ga1-xInxSb. Nanocrystalline grains together with a few larger grains (10-30 μm) are found to be spread in In0.2Co4Sb12. The former is comprised of either InSb, GaSb or Ga1-xInxSb. Because of their identical space group and similar lattice parameters, InSb, GaSb and Ga1-xInxSb could not be detected separately in EBSD. High resolution transmission electron microscopy (HRTEM) was used to resolve different phases, which showed GaSb grains of size ∼10-30 nm and InSb grains of size ∼30-100 nm. Scattering of charge carriers at the interfaces of InSb, GaSb and Ga1-xInxSb as well as the matrix phases increased both the electrical resistivity and Seebeck coefficient. The multi-scale size distribution of grains, of both the matrix phase and the secondary phases, scattered phonons within a broad wavelength range, resulting in very low lattice thermal conductivities. As a result, an enhanced figure of merit of 1.4 was achieved for the (GaSb)0.1 + In0.2Co4Sb12 nanocomposite at 773 K.
    Language English
    Publishing date 2020-11-06
    Publishing country England
    Document type Journal Article
    ZDB-ID 1472887-4
    ISSN 1477-9234 ; 1364-5447 ; 0300-9246 ; 1477-9226
    ISSN (online) 1477-9234 ; 1364-5447
    ISSN 0300-9246 ; 1477-9226
    DOI 10.1039/d0dt03429k
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  4. Article ; Online: Reply to the 'Comment on "Investigation on the structure and thermoelectric properties of Cu

    Mukherjee, Shriparna / Chetty, Raju / Madduri, P V Prakash / Nayak, Ajaya K / Wojciechowski, Krzysztof / Ghosh, Tanmoy / Chattopadhyay, Kamanio / Suwas, Satyam / Mallik, Ramesh Chandra

    Dalton transactions (Cambridge, England : 2003)

    2020  Volume 49, Issue 17, Page(s) 5738–5740

    Language English
    Publishing date 2020-04-21
    Publishing country England
    Document type Journal Article
    ZDB-ID 1472887-4
    ISSN 1477-9234 ; 1364-5447 ; 0300-9246 ; 1477-9226
    ISSN (online) 1477-9234 ; 1364-5447
    ISSN 0300-9246 ; 1477-9226
    DOI 10.1039/d0dt00412j
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  5. Article ; Online: Ti

    Karati, Anirudha / Nagini, M / Ghosh, Sanyukta / Shabadi, Rajashekhara / Pradeep, K G / Mallik, Ramesh Chandra / Murty, B S / Varadaraju, U V

    Scientific reports

    2019  Volume 9, Issue 1, Page(s) 5331

    Abstract: A new single phase high entropy alloy, ... ...

    Abstract A new single phase high entropy alloy, Ti
    Language English
    Publishing date 2019-03-29
    Publishing country England
    Document type Journal Article
    ZDB-ID 2615211-3
    ISSN 2045-2322 ; 2045-2322
    ISSN (online) 2045-2322
    ISSN 2045-2322
    DOI 10.1038/s41598-019-41818-6
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  6. Article ; Online: Investigation on the structure and thermoelectric properties of Cu

    Mukherjee, Shriparna / Chetty, Raju / Madduri, P V Prakash / Nayak, Ajaya K / Wojciechowski, Krzysztof / Ghosh, Tanmoy / Chattopadhyay, Kamanio / Suwas, Satyam / Mallik, Ramesh Chandra

    Dalton transactions (Cambridge, England : 2003)

    2019  Volume 48, Issue 3, Page(s) 1040–1050

    Abstract: Cu2Te is a superionic conductor that belongs to the Phonon Liquid Electron Crystal class of thermoelectric (TE) materials. Despite the simple chemical formula, the crystal structures and phases in the Cu2Te system have not been understood properly. In ... ...

    Abstract Cu2Te is a superionic conductor that belongs to the Phonon Liquid Electron Crystal class of thermoelectric (TE) materials. Despite the simple chemical formula, the crystal structures and phases in the Cu2Te system have not been understood properly. In this work, we study the structural and TE properties of Cu2Te (CT2), Cu1.6Te (CT1.6) and Cu1.25Te (CT1.25). The samples were synthesized via a solid-state reaction method. Powder X-ray diffraction analysis revealed that the samples have different crystal structures depending upon the Cu : Te stoichiometry. The elemental compositional analysis showed that all the samples are copper deficient. This is due to the precipitation of metallic copper on the surface of the ingot arising from the thermal dissociation of Cu2Te. The transport properties were measured in the temperature range 300 K-600 K. The electrical conductivity (σ) decreases with an increase in temperature indicating a metal-like behaviour for all the samples. The positive Seebeck coefficients (S) for all the samples indicates that majority charge carriers are holes. The sample CT2 has a higher S (29.5 μV K-1 at 573 K) and a lower σ (2513 S cm-1 at 573 K) due to a lower carrier (hole) concentration compared to the other two samples. With the increase in Cu deficiency, the hole concentration increases, and this leads to higher electronic thermal conductivity in the samples CT1.6 and CT1.25. The maximum thermoelectric figure of merit of 0.03 at 524 K is achieved for the sample CT2 owing to its higher power factor (0.24 mW m-1 K-2) and lower thermal conductivity (3.8 W m-1 K-1). The present study bridges the gap between the theoretical predictions and experimental observations involving the various possible structures in this system. Furthermore, we have shown that the Cu vacancies are detrimental to the thermoelectric performance of Cu2Te.
    Language English
    Publishing date 2019-01-02
    Publishing country England
    Document type Journal Article
    ZDB-ID 1472887-4
    ISSN 1477-9234 ; 1364-5447 ; 0300-9246 ; 1477-9226
    ISSN (online) 1477-9234 ; 1364-5447
    ISSN 0300-9246 ; 1477-9226
    DOI 10.1039/c8dt04351e
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  7. Article: Effect of Sn Substitution on the Thermoelectric Properties of Synthetic Tetrahedrite

    Tippireddy, Sahil / Chen, Kuei-Hsien / Karati, Anirudha / Malar, P / Mallik, Ramesh Chandra / Murty, B. S / Peter, Sebastian C / Prem Kumar, D. S / Ramakrishnan, Anbalagan / Sarkar, Shreya

    ACS applied materials & interfaces. 2019 May 23, v. 11, no. 24

    2019  

    Abstract: The present study reports the effect of Sn substitution on the structural and thermoelectric properties of synthetic tetrahedrite (Cu12Sb4S13) system. The samples were prepared with the intended compositions of Cu12Sb4–xSnxS13 (x = 0.25, 0.35, 0.5, 1) ... ...

    Abstract The present study reports the effect of Sn substitution on the structural and thermoelectric properties of synthetic tetrahedrite (Cu12Sb4S13) system. The samples were prepared with the intended compositions of Cu12Sb4–xSnxS13 (x = 0.25, 0.35, 0.5, 1) and sintered using spark plasma sintering. A detailed structural characterization of the samples revealed tetrahedrite phase as the main phase with Sn substituting at both Cu and Sb sites instead of only Sb site. The theoretical calculations using density functional theory revealed that Sn at Cu(1) 12d or Cu(2) 12e site moves the Fermi level (EF) toward the band gap, whereas Sn at Sb 8c site introduces hybridized hole states near EF. Consequently, a relatively high optimum power factor of 1.3 mW/mK2 was achieved by the x = 0.35 sample. The Sn-substituted samples exhibited a significant decrease in the total thermal conductivity (κT) compared to the pristine composition (Cu12Sb4S13), primarily because of reduced electronic thermal conductivity. Due to an optimum power factor (1.3 mW/mK2) and reduced thermal conductivity (0.9 W/mK), a maximum zT of 0.96 at 673 K was achieved for x = 0.35 sample, which is nearly 40% increment compared to that of the pristine (Cu12Sb4S13) sample.
    Keywords antimony ; copper ; density functional theory ; thermal conductivity ; tin
    Language English
    Dates of publication 2019-0523
    Size p. 21686-21696.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.9b02956
    Database NAL-Catalogue (AGRICOLA)

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  8. Article ; Online: Electronic and thermoelectric properties of Zn and Se double substituted tetrahedrite.

    Tippireddy, Sahil / Chetty, Raju / Raut, Krushna Kumari / Naik, Mit H / Mukharjee, Prashanta K / Jain, Manish / Nath, R / Wojciechowski, Krzysztof / Mallik, Ramesh Chandra

    Physical chemistry chemical physics : PCCP

    2018  Volume 20, Issue 45, Page(s) 28667–28677

    Abstract: The influence of Zn and Se double substitution on the electronic and thermoelectric properties of tetrahedrite was investigated in this study. The samples Cu11Zn1Sb4S13-xSex (x = 0.25, 0.5, 0.75, 1, and 2) were prepared via solid state synthesis followed ...

    Abstract The influence of Zn and Se double substitution on the electronic and thermoelectric properties of tetrahedrite was investigated in this study. The samples Cu11Zn1Sb4S13-xSex (x = 0.25, 0.5, 0.75, 1, and 2) were prepared via solid state synthesis followed by field assisted sintering. The density functional theory (DFT) results showed that Se substitution introduces additional bands near the Fermi level (EF), with lower effective mass compared to Zn (only) substituted sample Cu11Zn1Sb4S13. Consequently, the electrical resistivity decreased with the increase in Se content which is attributed to the enhanced charge carrier mobility caused by the more dispersive Se states as indicated by DFT results. But the Seebeck coefficient was invariant with x, due to the enhancement of the density of states (DOS) at EF. The overall effect was an increase in power factor of the Cu11Zn1Sb4S13-xSex samples compared to Cu11Zn1Sb4S13. The Zn2+ substitution at the Cu1+ tetrahedral site resulted in a decrease of the carrier thermal conductivity due to the decrease in charge carrier concentration. Whereas Se substitution resulted in the decrease of lattice thermal conductivity due to additional phonon scattering caused by the S-Se mass difference. Simultaneous optimization of the power factor and thermal conductivity could thus be achieved via double substitution at Cu and S sites. A maximum thermoelectric figure of merit (zT) of 0.86 at 673 K was exhibited by the Cu11Zn1Sb4S12.75Se0.25 sample due to its relatively high power factor among the samples (0.9 mW m-1 K-2 at 673 K) coupled with very low total thermal conductivity (0.67 W m-1 K-1 at 673 K).
    Language English
    Publishing date 2018-11-08
    Publishing country England
    Document type Journal Article
    ZDB-ID 1476244-4
    ISSN 1463-9084 ; 1463-9076
    ISSN (online) 1463-9084
    ISSN 1463-9076
    DOI 10.1039/c8cp05479g
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  9. Article ; Online: Thermoelectric properties of Co

    Ghosh, Sanyukta / Bisht, Anuj / Karati, Anirudha / Rogl, Gerda / Rogl, Peter / Murty, B S / Suwas, Satyam / Mallik, Ramesh Chandra

    Journal of physics. Condensed matter : an Institute of Physics journal

    2018  Volume 30, Issue 9, Page(s) 95701

    Abstract: The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride ( ... ...

    Abstract The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi
    Language English
    Publishing date 2018-03-07
    Publishing country England
    Document type Journal Article
    ZDB-ID 1472968-4
    ISSN 1361-648X ; 0953-8984
    ISSN (online) 1361-648X
    ISSN 0953-8984
    DOI 10.1088/1361-648X/aaa5ea
    Database MEDical Literature Analysis and Retrieval System OnLINE

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  10. Article ; Online: Enhanced Thermoelectric Performance in the Ba

    Ghosh, Sanyukta / Shankar, Gyan / Karati, Anirudha / Werbach, Katharina / Rogl, Gerda / Rogl, Peter / Bauer, Ernst / Murty, B S / Suwas, Satyam / Mallik, Ramesh Chandra

    ACS applied materials & interfaces

    2020  Volume 12, Issue 43, Page(s) 48729–48740

    Abstract: The thermoelectric efficiency of skutterudite materials can be improved by lowering the lattice thermal conductivity via the uniform dispersion of a nanosized second phase in the matrix of filled ... ...

    Abstract The thermoelectric efficiency of skutterudite materials can be improved by lowering the lattice thermal conductivity via the uniform dispersion of a nanosized second phase in the matrix of filled Co
    Language English
    Publishing date 2020-10-19
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c17254
    Database MEDical Literature Analysis and Retrieval System OnLINE

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