LIVIVO - The Search Portal for Life Sciences

zur deutschen Oberfläche wechseln
Advanced search

Search results

Result 1 - 10 of total 17

Search options

  1. Article ; Online: Thermal transport in metal-NbO

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Das, Sujan Kumar / Liang, Yan / Elliman, Robert G

    Nanoscale

    2023  Volume 15, Issue 16, Page(s) 7559–7565

    Abstract: Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal ... ...

    Abstract Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal properties of the device-structure. In this study, we investigate the effect of the metal electrodes on the threshold switching response of NbO
    Language English
    Publishing date 2023-04-27
    Publishing country England
    Document type Journal Article
    ZDB-ID 2515664-0
    ISSN 2040-3372 ; 2040-3364
    ISSN (online) 2040-3372
    ISSN 2040-3364
    DOI 10.1039/d3nr00173c
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  2. Article: Design and Application of Memristive Balanced Ternary Univariate Logic Circuit.

    Wang, Xiaoyuan / Zhang, Xinrui / Dong, Chuantao / Nath, Shimul Kanti / Iu, Herbert Ho-Ching

    Micromachines

    2023  Volume 14, Issue 10

    Abstract: This paper proposes a unique memristor-based design scheme for a balanced ternary digital logic circuit. First, a design method of a single-variable logic function circuit is proposed. Then, by combining with a balanced ternary multiplexer, some common ... ...

    Abstract This paper proposes a unique memristor-based design scheme for a balanced ternary digital logic circuit. First, a design method of a single-variable logic function circuit is proposed. Then, by combining with a balanced ternary multiplexer, some common application-type combinational logic circuits are proposed, including a balanced ternary half adder, multiplier and numerical comparator. The above circuits are all simulated and verified in LTSpice, which demonstrate the feasibility of the proposed scheme.
    Language English
    Publishing date 2023-09-30
    Publishing country Switzerland
    Document type Journal Article
    ZDB-ID 2620864-7
    ISSN 2072-666X
    ISSN 2072-666X
    DOI 10.3390/mi14101895
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  3. Article ; Online: Engineering the Threshold Switching Response of Nb

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Ratcliff, Thomas / Elliman, Robert Glen

    ACS applied materials & interfaces

    2021  Volume 13, Issue 2, Page(s) 2845–2852

    Abstract: Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and ... ...

    Abstract Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) characteristics of cross-point devices fabricated from undoped Nb
    Language English
    Publishing date 2021-01-06
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.0c19544
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  4. Article ; Online: Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb

    Nandi, Sanjoy Kumar / Nath, Shimul Kanti / Das, Sujan Kumar / Murdoch, Billy J / Ratcliff, Thomas / McCulloch, Dougal G / Elliman, Robert G

    ACS applied materials & interfaces

    2023  Volume 15, Issue 50, Page(s) 58613–58622

    Abstract: The resistive switching response of two terminal metal/oxide/metal devices depends on the stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal electrode to reduce the oxide layer. Here, we investigate compositional ... ...

    Abstract The resistive switching response of two terminal metal/oxide/metal devices depends on the stoichiometry of the oxide film, and this is commonly controlled by using a reactive metal electrode to reduce the oxide layer. Here, we investigate compositional and structural changes induced in Nb/Nb
    Language English
    Publishing date 2023-12-05
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.3c14431
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  5. Article ; Online: Metal-oxide interface reactions and their effect on integrated resistive/threshold switching in NbO

    Nath, Shimul Kanti / Nandi, Sanjoy Kumar / Li, Shuai / Elliman, Robert Glen

    Nanotechnology

    2020  Volume 31, Issue 23, Page(s) 235701

    Abstract: Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/ ... ...

    Abstract Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb
    Language English
    Publishing date 2020-02-20
    Publishing country England
    Document type Journal Article
    ZDB-ID 1362365-5
    ISSN 1361-6528 ; 0957-4484
    ISSN (online) 1361-6528
    ISSN 0957-4484
    DOI 10.1088/1361-6528/ab7889
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

  6. Article ; Online: High Spatial Resolution Thermal Mapping of Volatile Switching in NbO

    Nandi, Sanjoy Kumar / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Das, Sujan Kumar / Ratcliff, Thomas / Elliman, Robert G

    ACS applied materials & interfaces

    2022  Volume 14, Issue 25, Page(s) 29025–29031

    Abstract: Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based ... ...

    Abstract Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator-metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (∼100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbO
    Language English
    Publishing date 2022-06-14
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c06870
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  7. Article ; Online: Thermal Conductivity of Amorphous NbO

    Nandi, Sanjoy Kumar / Das, Sujan Kumar / Cui, Yubo / El Helou, Assaad / Nath, Shimul Kanti / Ratcliff, Thomas / Raad, Peter / Elliman, Robert G

    ACS applied materials & interfaces

    2022  Volume 14, Issue 18, Page(s) 21270–21277

    Abstract: Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device ... ...

    Abstract Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbO
    Language English
    Publishing date 2022-04-29
    Publishing country United States
    Document type Journal Article
    ISSN 1944-8252
    ISSN (online) 1944-8252
    DOI 10.1021/acsami.2c04618
    Database MEDical Literature Analysis and Retrieval System OnLINE

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  8. Article: High Spatial Resolution Thermal Mapping of Volatile Switching in NbOₓ-Based Memristor Using In Situ Scanning Thermal Microscopy

    Nandi, Sanjoy Kumar / Puyoo, Etienne / Nath, Shimul Kanti / Albertini, David / Baboux, Nicolas / Das, Sujan Kumar / Ratcliff, Thomas / Elliman, Robert G.

    ACS applied materials & interfaces. 2022 June 14, v. 14, no. 25

    2022  

    Abstract: Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based ... ...

    Abstract Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based memrsitive devices. In this study, we use scanning thermal microscopy (SThM) as an alternative thermal mapping technique that offers high spatial resolution imaging (∼100 nm) and is independent of material. Specifically, SThM is used to map the temperature distribution in NbOₓ-based cross-bar and nanovia devices with Pt top electrodes. The measurements on cross-bar devices reproduce the current redistribution and confinement processes previously observed by TRTI but without the need to coat the electrodes with a material of high thermo-reflectance coefficient (e.g., Au), while those on the nanovia devices highlight the spatial resolution of the technique. The measured temperature distributions are compared with those obtained from physics-based finite-element simulations and suggest that thermal boundary resistance plays an important role in heat transfer between the active device volume and the top electrode.
    Keywords electrodes ; heat transfer ; infrared spectroscopy ; temperature
    Language English
    Dates of publication 2022-0614
    Size p. 29025-29031.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c06870
    Database NAL-Catalogue (AGRICOLA)

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  9. Article: Thermal Conductivity of Amorphous NbOₓ Thin Films and Its Effect on Volatile Memristive Switching

    Nandi, Sanjoy Kumar / Das, Sujan Kumar / Cui, Yubo / El Helou, Assaad / Nath, Shimul Kanti / Ratcliff, Thomas / Raad, Peter / Elliman, Robert G.

    ACS applied materials & interfaces. 2022 Apr. 29, v. 14, no. 18

    2022  

    Abstract: Metal–oxide–metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device ... ...

    Abstract Metal–oxide–metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbOₓ films as a function of film composition and temperature. The thermal conductivity is shown to vary between 0.86 and 1.25 W·m–¹·K–¹ over the composition (x = 1.9 to 2.5) and temperature (293 to 453 K) ranges examined, and to increase with temperature for all compositions. The impact of these thermal conductivity variations on the quasistatic current–voltage (I–V) characteristics and oscillator dynamics of MOM devices is then investigated using a lumped-element circuit model. Understanding such effects is essential for engineering functional devices for nonvolatile memory and brain-inspired computing applications.
    Keywords heat ; models ; niobium ; temperature ; thermal conductivity
    Language English
    Dates of publication 2022-0429
    Size p. 21270-21277.
    Publishing place American Chemical Society
    Document type Article
    ISSN 1944-8252
    DOI 10.1021/acsami.2c04618
    Database NAL-Catalogue (AGRICOLA)

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

    Inter-library loan at ZB MED

    Your chosen title can be delivered directly to ZB MED Cologne location if you are registered as a user at ZB MED Cologne.

  10. Article ; Online: Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing.

    Nath, Shimul Kanti / Das, Sujan Kumar / Nandi, Sanjoy Kumar / Xi, Chen / Marquez, Camilo Verbel / Rúa, Armando / Uenuma, Mutsunori / Wang, Zhongrui / Zhang, Songqing / Zhu, Rui-Jie / Eshraghian, Jason / Sun, Xiao / Lu, Teng / Bian, Yue / Syed, Nitu / Pan, Wenwu / Wang, Han / Lei, Wen / Fu, Lan /
    Faraone, Lorenzo / Liu, Yun / Elliman, Robert G

    Advanced materials (Deerfield Beach, Fla.)

    2024  , Page(s) e2400904

    Abstract: The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold ... ...

    Abstract The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold switching in V
    Language English
    Publishing date 2024-03-22
    Publishing country Germany
    Document type Journal Article
    ZDB-ID 1474949-X
    ISSN 1521-4095 ; 0935-9648
    ISSN (online) 1521-4095
    ISSN 0935-9648
    DOI 10.1002/adma.202400904
    Database MEDical Literature Analysis and Retrieval System OnLINE

    Full text online

    More links

    Kategorien

    Order via subito

    This service is chargeable due to the Delivery terms set by subito. Orders including an article and supplementary material will be classified as separate orders. In these cases, fees will be demanded for each order.

To top